Theory of Critical Layer Thickness of Nonconstant Quantum-Well Width Produced by Interdiffusion and its Optoelectronics Consequence

MRS Proceedings ◽

10.1557/proc-484-425 ◽

1997 ◽

Vol 484 ◽

Cited By ~ 1

Author(s):

Michael C. Y. Chan ◽

E. Herbert Li

Keyword(s):

Quantum Well ◽

Plane Strain ◽

Layer Thickness ◽

Diffusion Length ◽

Critical Layer ◽

Critical Layer Thickness ◽

Interdiffusion Process ◽

Quantum Well Width ◽

Lattice Matched

AbstractIn this paper, the concept of critical layer thickness is applied to the interdiffused quantum well (DFQW) structure. For the as-grown InGaAs/LnP lattice matched quantum well, the interdiffusion process will induce in-plane strain into the DFQW forming a lattice mismatched system. The relation between the as-grown well width (Lz) and the diffusion length (Ld) for formation of dislocation is presented.

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Experimental studies of misfit dependence of critical layer thickness in pseudomorphic InGaAs single‐strained quantum‐well structures

Journal of Applied Physics ◽

10.1063/1.344272 ◽

1989 ◽

Vol 66 (5) ◽

pp. 2217-2219 ◽

Cited By ~ 30

Author(s):

Shang‐Lin Weng

Keyword(s):

Quantum Well ◽

Layer Thickness ◽

Experimental Studies ◽

Critical Layer ◽

Critical Layer Thickness ◽

Quantum Well Structures ◽

Strained Quantum Well

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Determination of critical layer thickness and strain tensor in InxGa1−xAs/GaAs quantum‐well structures by x‐ray diffraction

Journal of Applied Physics ◽

10.1063/1.354030 ◽

1993 ◽

Vol 73 (11) ◽

pp. 7389-7394 ◽

Cited By ~ 35

Author(s):

Y. C. Chen ◽

P. K. Bhattacharya

Keyword(s):

Quantum Well ◽

Layer Thickness ◽

Strain Tensor ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

Quantum Well Structures ◽

X Ray

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Optical diagnostics of InGaAs quantum well in pseudomorphic modulation-doped Al1-xGaxAs/InyGa1-yAs/GaAs heterostructures of less-than-critical layer thickness

10.1117/12.497184 ◽

2003 ◽

Author(s):

Georgiy G. Tarasov ◽

S. R. Lavorik ◽

Yu. I. Mazur ◽

Mikhail Y. Valakh ◽

Z. Y. Zhuchenko ◽

...

Keyword(s):

Quantum Well ◽

Layer Thickness ◽

Optical Diagnostics ◽

Critical Layer ◽

Critical Layer Thickness ◽

Ingaas Quantum Well

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Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures

Applied Physics Letters ◽

10.1063/1.98984 ◽

1987 ◽

Vol 51 (13) ◽

pp. 1004-1006 ◽

Cited By ~ 118

Author(s):

I. J. Fritz ◽

P. L. Gourley ◽

L. R. Dawson

Keyword(s):

Quantum Well ◽

Layer Thickness ◽

Critical Layer ◽

Critical Layer Thickness ◽

Quantum Well Structures ◽

Strained Quantum Well

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Enhanced nonradiative recombination in Al x Ga1−x N-based quantum wells thinner than the critical layer thickness determined by X-ray diffraction

Applied Physics Express ◽

10.35848/1882-0786/abe658 ◽

2021 ◽

Vol 14 (3) ◽

pp. 031007

Author(s):

Shuhei Ichikawa ◽

Mitsuru Funato ◽

Yoichi Kawakami

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Critical Layer ◽

Nonradiative Recombination ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

X Ray

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Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction

Applied Physics Letters ◽

10.1063/1.98004 ◽

1987 ◽

Vol 50 (15) ◽

pp. 980-982 ◽

Cited By ~ 179

Author(s):

P. J. Orders ◽

B. F. Usher

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

X Ray

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Modulation Structure and Superhardness Effect of VC/TiN Nano-Multilayer Films

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.184-185.1080 ◽

2012 ◽

Vol 184-185 ◽

pp. 1080-1083

Author(s):

Jian Ling Yue ◽

Wei Shi ◽

Ge Yang Li

Keyword(s):

Elastic Modulus ◽

Magnetron Sputtering ◽

Layer Thickness ◽

Coherent Structure ◽

Multilayer Films ◽

Critical Layer ◽

Maximum Hardness ◽

Critical Layer Thickness ◽

The Relationship

A series of VC/TiN nano-multilayer films with various TiN layer thicknesses were synthesized by magnetron sputtering method. The relationship between the modulation structure and superhardness effect of the multilayer films were investigated. The results reveal that TiN below a critical layer thickness grows coherently with VC layers in multilayers. Correspondingly, the hardness and elastic modulus of the multilayers increase significantly. The maximum hardness and modulus achieved in these multilayers is 40.7GPa and 328GPa.With further increase in the TiN layer thickness, coherent structure of multilayers are destroyed, resulting in a remarkable decrease of hardness and modulus. The superhardness effect of multilayers is related to the three directional strains generated from the coherent structure.

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