Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction

Applied Physics Letters ◽

10.1063/1.98004 ◽

1987 ◽

Vol 50 (15) ◽

pp. 980-982 ◽

Author(s):

P. J. Orders ◽

B. F. Usher

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

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Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication

Journal of Electronic Materials ◽

10.1007/s11664-999-0111-1 ◽

1999 ◽

Vol 28 (5) ◽

pp. 553-558 ◽

Author(s):

X. G. Zhang ◽

P. Li ◽

D. W. Parent ◽

G. Zhao ◽

J. E. Ayers ◽

...

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

X Ray ◽

Dislocation Multiplication

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Determination of critical layer thickness and strain tensor in InxGa1−xAs/GaAs quantum‐well structures by x‐ray diffraction

Journal of Applied Physics ◽

10.1063/1.354030 ◽

1993 ◽

Vol 73 (11) ◽

pp. 7389-7394 ◽

Author(s):

Y. C. Chen ◽

P. K. Bhattacharya

Keyword(s):

Quantum Well ◽

Layer Thickness ◽

Strain Tensor ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

Quantum Well Structures ◽

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Accurate determination of misfit strain, layer thickness, and critical layer thickness in ultrathin buried strained InGaAs/GaAs layer by x-ray diffraction

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586445 ◽

1992 ◽

Vol 10 (2) ◽

pp. 769 ◽

Author(s):

Y. C. Chen

Keyword(s):

Layer Thickness ◽

Accurate Determination ◽

Misfit Strain ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

X Ray ◽

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Enhanced nonradiative recombination in Al x Ga1−x N-based quantum wells thinner than the critical layer thickness determined by X-ray diffraction

Applied Physics Express ◽

10.35848/1882-0786/abe658 ◽

2021 ◽

Vol 14 (3) ◽

pp. 031007

Author(s):

Shuhei Ichikawa ◽

Mitsuru Funato ◽

Yoichi Kawakami

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Critical Layer ◽

Nonradiative Recombination ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

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Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction

Journal of Electronic Materials ◽

10.1007/bf02817701 ◽

1993 ◽

Vol 22 (11) ◽

pp. 1365-1368 ◽

Author(s):

C. A. Wang ◽

S. H. Groves ◽

J. H. Reinold ◽

D. R. Calawa

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Multiple Quantum Wells ◽

Critical Layer ◽

Multiple Quantum ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

Double Crystal ◽

X Ray ◽

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Critical layer thickness in AlGaAsSbGaSb heterostructures determined by X-ray diffraction

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90840-s ◽

1993 ◽

Vol 130 (1-2) ◽

pp. 96-100 ◽

Author(s):

J.L. Lazzari ◽

C. Fouillant ◽

P. Grunberg ◽

J.L. Leclercq ◽

A. Joullié ◽

...

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

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Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters ◽

10.1063/1.1334361 ◽

2000 ◽

Vol 77 (25) ◽

pp. 4121-4123 ◽

Author(s):

M. J. Reed ◽

N. A. El-Masry ◽

C. A. Parker ◽

J. C. Roberts ◽

S. M. Bedair

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

Critical Layer Thickness ◽

Thickness Determination ◽

Double Heterostructures

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Determination of the Misfit and Layer Thickness of Monocrystalline Epitaxial Layers by Means of High-Resolution X-Ray Diffraction

Materials Science Forum ◽

10.4028/www.scientific.net/msf.79-82.165 ◽

1991 ◽

Vol 79-82 ◽

pp. 165-168

Author(s):

H.-G. Brühl ◽

H. Rhan

Keyword(s):

High Resolution ◽

Layer Thickness ◽

Epitaxial Layers ◽

X Ray Diffraction ◽

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Determination of the critical layer thickness in the InGaN/GaN heterostructures

Applied Physics Letters ◽

10.1063/1.125146 ◽

1999 ◽

Vol 75 (18) ◽

pp. 2776-2778 ◽

Author(s):

C. A. Parker ◽

J. C. Roberts ◽

S. M. Bedair ◽

M. J. Reed ◽

S. X. Liu ◽

...

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

Critical Layer Thickness

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Determination of the critical layer thickness of GaAs/InGaAs strained quantum wells by scanning near-field optical spectroscopy

Compound Semiconductors 2001 ◽

10.1201/9781482268980-67 ◽

2002 ◽

pp. 481-486

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Optical Spectroscopy ◽

Critical Layer ◽

Critical Layer Thickness ◽

Strained Quantum Wells

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