Enhanced nonradiative recombination in Al x Ga1−x N-based quantum wells thinner than the critical layer thickness determined by X-ray diffraction

Applied Physics Express ◽

10.35848/1882-0786/abe658 ◽

2021 ◽

Vol 14 (3) ◽

pp. 031007

Author(s):

Shuhei Ichikawa ◽

Mitsuru Funato ◽

Yoichi Kawakami

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Critical Layer ◽

Nonradiative Recombination ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

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Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction

Journal of Electronic Materials ◽

10.1007/bf02817701 ◽

1993 ◽

Vol 22 (11) ◽

pp. 1365-1368 ◽

Author(s):

C. A. Wang ◽

S. H. Groves ◽

J. H. Reinold ◽

D. R. Calawa

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Multiple Quantum Wells ◽

Critical Layer ◽

Multiple Quantum ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

Double Crystal ◽

X Ray ◽

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Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction

Applied Physics Letters ◽

10.1063/1.98004 ◽

1987 ◽

Vol 50 (15) ◽

pp. 980-982 ◽

Author(s):

P. J. Orders ◽

B. F. Usher

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

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Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication

Journal of Electronic Materials ◽

10.1007/s11664-999-0111-1 ◽

1999 ◽

Vol 28 (5) ◽

pp. 553-558 ◽

Author(s):

X. G. Zhang ◽

P. Li ◽

D. W. Parent ◽

G. Zhao ◽

J. E. Ayers ◽

...

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

X Ray ◽

Dislocation Multiplication

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Determination of critical layer thickness and strain tensor in InxGa1−xAs/GaAs quantum‐well structures by x‐ray diffraction

Journal of Applied Physics ◽

10.1063/1.354030 ◽

1993 ◽

Vol 73 (11) ◽

pp. 7389-7394 ◽

Author(s):

Y. C. Chen ◽

P. K. Bhattacharya

Keyword(s):

Quantum Well ◽

Layer Thickness ◽

Strain Tensor ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

Quantum Well Structures ◽

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Accurate determination of misfit strain, layer thickness, and critical layer thickness in ultrathin buried strained InGaAs/GaAs layer by x-ray diffraction

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586445 ◽

1992 ◽

Vol 10 (2) ◽

pp. 769 ◽

Author(s):

Y. C. Chen

Keyword(s):

Layer Thickness ◽

Accurate Determination ◽

Misfit Strain ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

X Ray ◽

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Critical layer thickness in AlGaAsSbGaSb heterostructures determined by X-ray diffraction

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90840-s ◽

1993 ◽

Vol 130 (1-2) ◽

pp. 96-100 ◽

Author(s):

J.L. Lazzari ◽

C. Fouillant ◽

P. Grunberg ◽

J.L. Leclercq ◽

A. Joullié ◽

...

Keyword(s):

Layer Thickness ◽

Critical Layer ◽

X Ray Diffraction ◽

Critical Layer Thickness ◽

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Comment on ‘‘Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy’’ [Appl. Phys. Lett.54, 48 (1989)]

Applied Physics Letters ◽

10.1063/1.102085 ◽

1989 ◽

Vol 55 (20) ◽

pp. 2147-2147 ◽

Author(s):

J. Woodhead

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Quantum Wells ◽

Layer Thickness ◽

Critical Layer ◽

Critical Layer Thickness ◽

Transmission Electron

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Critical layer thickness of In0.82Ga0.18As/InP quantum wells

Journal of Crystal Growth ◽

10.1016/0022-0248(92)90417-h ◽

1992 ◽

Vol 120 (1-4) ◽

pp. 353-356 ◽

Author(s):

A. Le Corre ◽

S. Durel ◽

F. Clérot ◽

B. Lambert ◽

A. Poudoulec ◽

...

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Critical Layer ◽

Critical Layer Thickness

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Temperature‐dependent critical layer thickness for In0.36Ga0.64As/GaAs single quantum wells

Applied Physics Letters ◽

10.1063/1.104511 ◽

1991 ◽

Vol 58 (8) ◽

pp. 854-855 ◽

Author(s):

M. J. Ekenstedt ◽

S. M. Wang ◽

T. G. Andersson

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Critical Layer ◽

Single Quantum ◽

Temperature Dependent ◽

Critical Layer Thickness

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Response to ‘‘Comment on ‘Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron miscroscopy’ ’’ [Appl. Phys. Lett.55, 2147 (1989)]

Applied Physics Letters ◽

10.1063/1.102086 ◽

1989 ◽

Vol 55 (20) ◽

pp. 2147-2148

Author(s):

J.‐P. Reithmaier ◽

H. Cerva ◽

R. Lösch

Keyword(s):

Quantum Wells ◽

Layer Thickness ◽

Critical Layer ◽

Critical Layer Thickness ◽

Transmission Electron

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