Transient Photoconductivity Studies of a-Si:H Interfaces

1985 ◽  
Vol 49 ◽  
Author(s):  
R. A. Street
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Metal Contacts ◽  
Transient Photoconductivity ◽  
Dielectric Interfaces

AbstractThe application of transient photoconductivity to the study of contacts and interfaces with a-Si:H is reviewed. The photocurrent is shown to contain three terms - one from the drift of photogenerated carriers, and two from contact and bulk effects due to the electric field induced by the drifting carriers. For different sample configurations, each of these terms can dominate, and each gives different information about a-Si:H bulk or surface electronic properties. The effects are illustrated with data from metal contacts, dielectric interfaces, doped layers and gap cell measurements.

Electronic properties of semiconductor interfaces

1987 ◽  
Vol 45 ◽  
pp. 334-337
Author(s):  
Jerry Woodall
Keyword(s):  
Fermi Level ◽  
Electronic Properties ◽  
Significant Role ◽  
High Speed ◽  
Laboratory Scale ◽  
Metal Contacts ◽  
Manufacturing Environment ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Dielectric Interfaces

Over the past decade III-V materials have been successfully commercialized for optoelectronic applications requiring LED's lasers and photodetectors. The success of these materials for these applications is based primarily on the use of heterojunction structures formed by epitaxial techniques in a manufacturing environment. More recently, III-V materials, notably GaAs, have been studied in the R&D environment as possible materials for use in high speed devices and circuits including VLSI. Even though the use of epitaxially grown structures has played a significant role in the success of laboratory scale devices and circuits, there are still several technology problems which will need to be solved before affordable manufacturing can be done. Two important challenges facing the commercialization of these materials for this application are metal contacts, and dielectrics for control and passivation. Both of these challenges are rooted in a common problem. Stated simply, the problem is that at nearly all GaAs/metal or dielectric interfaces the Fermi level is pinned near mid-gap.

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Tunable electronic properties of GaS-SnS2 heterostructure by strain and electric field

2021 ◽  
Author(s):  
Dahua Ren ◽  
Qiang Li ◽  
Kai Qian ◽  
Xingyi Tan
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Visible Light ◽  
Electronic Properties ◽  
Electronic Structures ◽  
Density Functional ◽  
Band Alignment ◽  
Promising Candidate ◽  
Functional Theory ◽  
External Strain

Abstract Vertically stacked heterostructures have received extensive attention because of their tunable electronic structures and outstanding optical properties. In this work, we have studied the structural, electronic and optical properties of vertically stacked GaS-SnS2 heterostructure under the frame of density functional theory. We find that the stacked GaS-SnS2 heterostructure is a semiconductor with suitable indirect band gaps of 1.82 eV, exhibiting a type-II band alignment for easily separating the photo-generated carriers. The electronic properties of GaS-SnS2 heterostructure can be effectively tuned by external strain and electric field. The optical absorption of GaS-SnS2 heterostructure is more enhanced by comparison with the GaS monolayer and SnS2 monolayer in the visible light. Our results suggest that GaS-SnS2 heterostructure is a promising candidate for the photocatalyst and photoelectronic devices in visible light.

Manipulating the optical and electronic properties of MoO3 films through electric-field-induced ion migration

2021 ◽  
Author(s):  
Xiaoxia Wang ◽  
Fanfan Du ◽  
Yingmei Zhang ◽  
Jie Yang ◽  
Xiaoli Li ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Optical Properties ◽  
Electric Field ◽  
Electronic Properties ◽  
Hydrogen Ions ◽  
Lithium Ions ◽  
Ion Migration ◽  
Electronic And Optical Properties ◽  
Acidic Ionic Liquid ◽  
Optical And Electronic Properties

The intercalation of hydrogen ions and lithium ions in MoO3 films is realized by acidic ionic liquid gating, which modifies the electronic and optical properties of MoO3 films, is promising for designing multifunctional devices.

Strain engineering and electric field tunable of the electronic properties of two-dimensional ZnGeN2 monolayer

2021 ◽  
Author(s):  
Thi Nga Do ◽  
Son-Tung Nguyen ◽  
Khang Pham
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
First Principles ◽  
Strain Engineering ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Structural And Electronic Properties

In this work, by means of the first-principles calculations, we investigate the structural and electronic properties of a two-dimensional ZnGeN2 monolayer as well as the effects of strains and electric...

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