Micromorphology, Microstructure and Magnetic Properties of Sputtered Garnet Multilayers

1997 ◽  
Vol 494 ◽  
Author(s):  
R. Marcelli ◽  
G. Padeletti ◽  
N. Gambacorti ◽  
M. G. Simeone ◽  
D. Fiorani

ABSTRACTThe growth technique, the micromorphological and microstructural characterization by means of atomic force microscopy (AFM) and secondary ions mass spectrometry (SIMS) as well as the magnetic properties of a novel class of magnetic multilayers, based on radio frequency (RF) sputtered thin amorphous garnet films, are presented. One, three and five thin film multilayers composed by amorphous pure yttrium iron garnet (a:YIG) and amorphous gadolinium gallium garnet (a:GGG) have been grown on GGG single crystal substrates. The multilayer interfaces have been found to be comparable in both, the three and five-layers structure. Low field susceptibility measurements, showed a paramagnetic behaviour for the single layer YIG film. For the three and five layers samples, irreversibility effects were observed, giving evidence of magnetic clusters at the interface YIG/GGG.

2019 ◽  
Vol 45 (3) ◽  
pp. 3414-3418
Author(s):  
Qianwen Guo ◽  
Hui Zheng ◽  
Liang Zheng ◽  
Peng Zheng ◽  
Qiong Wu

2009 ◽  
Vol 152-153 ◽  
pp. 143-146 ◽  
Author(s):  
A. Logginov ◽  
G. Meshkov ◽  
A. Nikolaev ◽  
E. Nikolaeva ◽  
A. Pyatakov ◽  
...  

The room temperature magnetoelectric effect was observed in epitaxial iron garnet films that appeared as magnetic domain wall motion induced by electric field. The films grown on gadolinium-gallium garnet substrates with various crystallographic orientations were examined. The effect was observed in (210) and (110) films and was not observed in (111) films. Dynamic observation of the domain wall motion in 800 kV/cm electric field pulses gave the domain wall velocity in the range 30÷50 m/s. Similar velocity was achieved in magnetic field pulse about 50 Oe.


2017 ◽  
Vol 95 (6) ◽  
Author(s):  
A. Talalaevskij ◽  
M. Decker ◽  
J. Stigloher ◽  
A. Mitra ◽  
H. S. Körner ◽  
...  

1998 ◽  
Vol 517 ◽  
Author(s):  
M. Wallenhorst ◽  
V. Backherms ◽  
A. Josef ◽  
N. Bahlmann ◽  
M. Lohmeyer ◽  
...  

AbstractGarnet films of composition (Lu,Bi)3(Fe,Ga,Al)5O12 and (Tm,Bi)3(Fe,Ga)5O12 are grown by liquid-phase epitaxy on [111]-oriented substrates of gadolinium gallium garnet. Ferrimagnetic films with positive or negative Faraday-rotation as well as paramagnetic films with negligible Faraday-rotation are produced by variations of the rare earth ion substitutions. The temperature dependence of Faraday-rotation is fitted with a molecular field model. Optical rib waveguides in single and double layer garnet films with different Faraday-rotations are realized. The nonreciprocal phase shift of the TM0-Mode is studied both theoretically and experimentally at a wavelength of 1.3 μm. Results show that the maximum nonreciprocal effect at room temperature of double layer films with opposite Faraday-rotation is 1.6 times as large as that of comparable single layer waveguides. But, because of the large temperature dependence of the Faraday-rotation of the positive rotating films, these waveguides show a large temperature dependence of the nonreciprocal phase shift. This problem can be avoided if the positive rotating layer is replaced by a paramagnetic layer. Agreement between calculations and measurements is excellent.


MRS Advances ◽  
2019 ◽  
Vol 4 (09) ◽  
pp. 553-558 ◽  
Author(s):  
Yiheng Rao ◽  
Huaiwu Zhang ◽  
Dainan Zhang ◽  
Lichuan Jin ◽  
Qinghui Yang ◽  
...  

ABSTRACTLa3+ doped yttrium iron garnet films have been grown on (111) oriented gadolinium gallium garnet substrates via Liquid phase epitaxy technique as a basic material for ISHE device fabrication. Pt as a material with a large spin hall angle was used as a spin detection layer. We investigated the dependence of the spin pumping effect on the power and frequency of the excitation microwaves in La:YIG/Pt bilayers by measuring the ISHE voltage. We demonstrated that the area under the ISHE curve(SISHE) across a wide power range had a nearly linear correlation with the input microwave power (Pin). The parameter SISHE can be used to describe the spin current energy in a Pt layer which can be a useful parameter for a microwave rectifier.


2018 ◽  
Vol 4 (7) ◽  
pp. 1800106 ◽  
Author(s):  
Takuya Yoshimoto ◽  
Taichi Goto ◽  
Kei Shimada ◽  
Bungo Iwamoto ◽  
Yuichi Nakamura ◽  
...  

2018 ◽  
Vol 63 (7) ◽  
pp. 1029-1035 ◽  
Author(s):  
Yu. V. Khivintsev ◽  
V. K. Sakharov ◽  
S. L. Vysotskii ◽  
Yu. A. Filimonov ◽  
A. I. Stognii ◽  
...  

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