The Effect of Radiation Induced Disorder on La0.7Ca0.3MnO3–δ Thin Films

ABSTRACTThe effects of disorder on the transport and magnetic properties of pulsed laser deposited La0.7Ca0.3MnO3 thin films were studied. Ion irradiation with 10 MeV I and 6 MeV Si ions was used to produce controlled levels of defects ranging from 0.006 to 0.024 displacements per atom. The peak resistance temperature of the I-irradiated films decreased from 264K for the undamaged film to OK for the 0.016 dpa film. The magnetic ordering temperature decreased from 270K (undamaged) to 130K (0.011 dpa), and remained nearly constant at 130K for higher damage levels. This demonstrates a decoupling of the magnetic and metal-insulator transitions. A characteristic relationship between the peak resistance temperature and activation energy of resistance with the form Tp = 285(1-Δρ/115)0.13, was observed for all films. This characteristic relationship indicates that the range of resistivity and magnetoresistivity values for observed La0.7Ca0.3MnO3 can be explained in terms of disorder-limited polaron hopping.

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Effect of process parameters on phase stability and metal-insulator transition of vanadium dioxide (VO 2 ) thin films by pulsed laser deposition

Acta Materialia ◽

10.1016/j.actamat.2017.07.025 ◽

2017 ◽

Vol 137 ◽

pp. 12-21 ◽

Cited By ~ 19

Author(s):

Ryan McGee ◽

Ankur Goswami ◽

Behnam Khorshidi ◽

Kristi McGuire ◽

Kalvin Schofield ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Process Parameters ◽

Phase Stability ◽

Vanadium Dioxide ◽

Pulsed Laser ◽

Insulator Transition ◽

Laser Deposition ◽

Metal Insulator Transition ◽

Metal Insulator

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Pulsed Laser Deposition of LCO and LSCO Thin Films for Metal-Insulator Transition

ECS Meeting Abstracts ◽

10.1149/ma2007-02/34/1534 ◽

2007 ◽

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Insulator Transition ◽

Laser Deposition ◽

Metal Insulator Transition ◽

Metal Insulator

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Quantitative control of magnetic ordering in FeRh thin films using 30 keV Ga ion irradiation from a focused ion beam system

Journal of Applied Physics ◽

10.1063/1.3549440 ◽

2011 ◽

Vol 109 (7) ◽

pp. 07E311 ◽

Cited By ~ 19

Author(s):

K. Aikoh ◽

S. Kosugi ◽

T. Matsui ◽

A. Iwase

Keyword(s):

Thin Films ◽

Focused Ion Beam ◽

Ion Irradiation ◽

Ion Beam ◽

Magnetic Ordering ◽

Beam System

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The effect of oxygen flow rate on metal–insulator transition (MIT) characteristics of vanadium dioxide (VO2) thin films by pulsed laser deposition (PLD)

Applied Surface Science ◽

10.1016/j.apsusc.2020.146995 ◽

2020 ◽

Vol 529 ◽

pp. 146995 ◽

Cited By ~ 1

Author(s):

Syed A. Bukhari ◽

Sooraj Kumar ◽

Pawan Kumar ◽

Sarang P. Gumfekar ◽

Hyun-Joong Chung ◽

...

Keyword(s):

Thin Films ◽

Flow Rate ◽

Vanadium Dioxide ◽

Pulsed Laser ◽

Oxygen Flow Rate ◽

Laser Deposition ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Effect Of Oxygen ◽

Vo2 Thin Films

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Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition

Scripta Materialia ◽

10.1016/j.scriptamat.2019.09.019 ◽

2020 ◽

Vol 177 ◽

pp. 32-37 ◽

Cited By ~ 6

Author(s):

Thameur Hajlaoui ◽

Nicolas Émond ◽

Christian Quirouette ◽

Boris Le Drogoff ◽

Joëlle Margot ◽

...

Keyword(s):

Thin Films ◽

Transition Temperature ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Insulator Transition ◽

Laser Deposition ◽

Metal Insulator Transition ◽

Metal Insulator ◽

Boron Doped ◽

Vo2 Thin Films

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Anomalous magnetic ordering transition and induced Raman scattering in BiFeO3 thin films

MRS Proceedings ◽

10.1557/proc-1034-k03-05 ◽

2007 ◽

Vol 1034 ◽

Author(s):

Manoj K Singh ◽

W Prellier ◽

H M Jang ◽

Ram S Katiyar

Keyword(s):

Thin Films ◽

Characteristic Temperature ◽

Pulsed Laser ◽

Magnetic Ordering ◽

Laser Deposition ◽

Zero Field ◽

Bifeo3 Thin Films ◽

Raman Modes ◽

Ordering Transition ◽

Zone Folding

AbstractLow temperature magnetic properties and Raman spectrum of highly (111)-oriented rhombohedral BiFeO3 (BFO) thin films epitaxially grown on (111) SrTiO3 substrates by pulsed laser deposition have been studied. Zero field cooled (ZFC) and field cooled (FC) magnetization curves display divergence at characteristic temperature Tirr (H), which are magnetic field dependent, suggesting a spin-glass like behavior of the film. The change in magnetic ordering results in anomalous phonon behavior such as the extraordinary enhancement and appearance of new Raman modes due to Brillouin zone folding below ∼200 K.

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Structural and dielectric proper ties of CaCu3Ti4O12 thin film. deposited using laser ablation.

MRS Proceedings ◽

10.1557/proc-785-d6.6 ◽

2003 ◽

Vol 785 ◽

Author(s):

V. Gupta ◽

R.R. Das ◽

A. Dixit ◽

P. Bhattacharya ◽

R.S. Katiyar

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Vibrational Modes ◽

X Ray Diffraction ◽

Metal Insulator ◽

X Ray ◽

Si Substrates ◽

Micro Raman Spectroscopy

ABSTRACTCaCu3Ti4O12 (CCT) thin films were deposited on Pt/TiO2/SiO2/Si substrates using pulsed laser deposition technique. During the thin films deposition, the substrate temperature was varied in the range of 700–800 °C with a constant O2 pressure of 200 mTorr. X-ray diffraction showed the polycrystalline nature of the films. The dielectric properties of the films were studied in metal insulator configuration. Films grown at higher substrate temperature exhibited highest value of dielectric permittivity (∼2200). Micro Raman spectroscopy was used to study the vibrational modes of the CCT thin films in comparison with the bulk ceramics.

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