In situ Characterization of Functional Organic Thin Films by Energy Dispersive Grazing Incidence X-ray Diffraction

1997 ◽  
Vol 502 ◽  
Author(s):  
Yuji Yoshida ◽  
Hiroshi Takiguchi ◽  
Nobutaka Tanigaki ◽  
Kiyoshi Yase
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Organic Thin Films ◽  
Grazing Incidence ◽  
Energy Dispersive ◽  
Vacuum System ◽  
Initial Growth ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTWe are investigating well-ordered highly crystalline thin films made using organic molecular beam deposition (OMBD) since it is important to control the formation mechanism at the initial growth process. Then, we developed a new in situ technique of energy dispersive grazing incidence X-ray diffraction utilized within an ultrahigh vacuum system. This technique (in situ ED-GID) makes it possible to examine the crystal structure, orientation and morphology of organic thin films during deposition without any damage to the film. In the present review, we examined the growth process of thin films of functional organic dyes, fullerene (C60) and p-sexiphenyl (6P) by using this in situ ED-GID. The crystal strucutre and molecular orientation in epitaxially-grown thin films were confirmed during the initial stages of growth. Also, the morphology of C60 thin films was examined during the deposition. As a result, it was confirmed that the decay curves of X-ray fluorescence indicate different island growth in C60 thin films.

Energy Dispersive Grazing Incidence X-ray Diffraction Study on Organic Thin Films Epitaxially Grown on Crystalline Substrate

1997 ◽  
pp. 659-664
Author(s):  
Kenji Ishida ◽  
Akinori Kita ◽  
Kouichi Hayashi ◽  
Toshihisa Horiuchi ◽  
Kazumi Matsushige ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Study ◽  
Organic Thin Films ◽  
Grazing Incidence ◽  
Energy Dispersive ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystalline Substrate

scholarly journals 3D-structural Analysis of Epitaxially-grown Organic Thin Films by a Newly Developed Energy Dispersive X-ray Diffraction System.

Hyomen Kagaku ◽  
1998 ◽  
Vol 19 (4) ◽  
pp. 259-264
Author(s):  
Kenji ISHIDA ◽  
Toshihisa HORIUCHI ◽  
Kazumi MATSUSHIGE MATSUSHIGE
Keyword(s):  
Thin Films ◽  
Structural Analysis ◽  
Organic Thin Films ◽  
Energy Dispersive ◽  
X Ray Diffraction ◽  
X Ray

In situ grazing-incidence X-ray diffraction during electrodeposition of birnessite thin films: Identification of solid precursors

2011 ◽  
Vol 13 (5) ◽  
pp. 491-494 ◽  
Author(s):  
M. Ndjeri ◽  
S. Peulon ◽  
M.L. Schlegel ◽  
A. Chaussé
Keyword(s):  
Thin Films ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray

Energy Dispersive Grazing Incidence X-ray Diffraction Study on Organic Thin Films EpitaxiaHy Grown on Crystalline Substrate

1995 ◽  
Vol 39 ◽  
pp. 659-664 ◽  
Author(s):  
Kenji Ishida ◽  
Akinori Kita ◽  
Kouichi Hayashi ◽  
Toshihisa Horiuchi ◽  
Shoichi Kal ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Studies ◽  
Organic Thin Films ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural Evaluation ◽  
Crystalline Substrate ◽  
Scattering Volume

Thin film technology is rapidly evolving today, and the characterization of the thin film and its surface have become very important issue not only from scientific but also technological viewpoints. Although x-ray diffraction measurements have been used as suitable evaluation methods in crystallography studies, its application to the structural evaluation of the thin films, especially organic one having the low electron densities, is not easy due to the small amounts of scattering volume and the high obstructive scattering noise from the substrate. However, the x-ray diffraction measurements under grazing incidence will aid not only in overcoming the such problems but also in analyzing in-plane structure of the thin films. Therefore, so-called grazing incidence x-ray diffraction (GIXD) has been recognized as one of the most powerful tools for the surface and thin film studies.

Pressure Dependent Rapid Thermal Processing of CuInS2 Thin Films Investigated by In-Situ Energy Dispersive X-ray Diffraction

2007 ◽  
Vol 1012 ◽  
Author(s):  
Immo Michael Kötschau ◽  
Humberto Rodriguez-Alvarez ◽  
Cornelia Streeck ◽  
Alfons Weber ◽  
Manuela Klaus ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Thermal Processing ◽  
Reaction Pathway ◽  
Rapid Thermal Processing ◽  
Energy Dispersive ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray

AbstractThe rapid thermal processing (RTP) of Cu-rich Cu/In precursors for the synthesis of CuInS2 thin films is possible within a broad processing window regarding leading parameters like top temperature, heating rate, and Cu excess. The key reaction pathway for the CuInS2 phase formation has already been investigated by in-situ energy dispersive X-ray diffraction (EDXRD) for various precursor stoichiometries, heating rates and top temperatures at sulphur partial pressure conditions which are typical for physical vapour deposition processes. According to the phase diagrams of the binary sulphide phases, the sulfur partial pressure strongly determines the occuring crystalline phases. However, a controlled variation of the maximum sulphur partial in a typical RTP experiment has not been carried out yet. In order to study the influence of this parameter a special RTP reaction chamber was designed suitable for in-situ EDXRD experiments at the EDDI beamline at BESSY, Berlin. In a typical in-situ RTP/EDXRD experiment sulphur and a Cu/In/Mo/glass precursor are placed in an evacuated graphite reactor. The amount of sulphur determines the maximum pressure available at the top temperature of the experiment. As the RTP process proceeds a complete EDXRD spectrum is acquired every 10 seconds and thus the various stages of the reaction path and the crystalline phases can be monitored. The first experiments show already a significant change in the reaction pathway and the secondary Cu-S phases which segregate on top of the CuInS2 thin film during the reaction.

In-situ studies of the recrystallization process of CuInS2 thin films by energy dispersive X-ray diffraction

2011 ◽  
Vol 519 (21) ◽  
pp. 7193-7196 ◽  
Author(s):  
D. Thomas ◽  
R. Mainz ◽  
H. Rodriguez-Alvarez ◽  
B. Marsen ◽  
D. Abou-Ras ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Dispersive ◽  
Recrystallization Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
In Situ Studies ◽  
Cuins2 Thin Films

Formation of Cu2ZnSnS4 and Cu2ZnSnS4-CuInS2 Thin Films Investigated by In-Situ Energy Dispersive X-Ray Diffraction

2007 ◽  
Vol 1012 ◽  
Author(s):  
Alfons Weber ◽  
Immo Kötschau ◽  
Susan Schorr ◽  
Hans-Werner Schock
Keyword(s):  
Thin Films ◽  
Reaction Path ◽  
Energy Dispersive ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Effects ◽  
Cuins2 Thin Films ◽  
Diffraction Peaks ◽  
Poor Adhesion

AbstractChalcopyrite CuInS2 and the structurally related kesterite Cu2ZnSnS4 are known as photovoltaic absorber materials. In this study different precursor thin films of the quaternary Cu-Zn-Sn-S system (stacking: Mo/CuS/ZnS-SnS) and of the pentenary Cu-In-Zn-Sn-S system (stacking: Mo/CuIn/ZnS-SnS) were annealed in sulfur atmosphere. The predominant crystalline phases were detected by in-situ energy dispersive X-ray diffraction (EDXRD). Additionally the X-ray fluorescence signals of the film components were recorded to detect diffusion effects. For the quaternary system we found ZnS, CuS, Cu2-xS, Sn2S3 and SnS as main binary phases during annealing. The Sn2S3-SnS phase transition had a significant impact on the later formation of ternary/quaternary phases. A high diffusivity of copper can explain the little influence of the precursor stacking on the reaction path and may also be responsible for the poor adhesion of the films. For annealing temperatures above 450°C Cu2ZnSnS4 can be identified clearly by XRD. The incorporation of indium in the system leads to new diffraction peaks which can be explained by the formation of solid solutions in the system CuInS2-Cu2ZnSnS4.

Structural Evaluation and Molecular Control of Vacuum-Evaporated Organic Thin Films

MRS Bulletin ◽  
1995 ◽  
Vol 20 (6) ◽  
pp. 26-31 ◽  
Author(s):  
Kazumi Matsushige
Keyword(s):  
Thin Films ◽  
Organic Molecules ◽  
Electronic Devices ◽  
Organic Thin Films ◽  
Electronic Interaction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atoms And Molecules

Recently, organic molecules and their complexes with inorganic or metallic materials have drawn many researchers' interest as candidate materials for nanoscale electronic devices of the next generation, especially since Carter's proposal on molecular electronic devices (MEDs) with the functions of gating, switching, memory, etc. in one molecule. However, in order to build such nanoscopic organic electronic devices to replace conventional silicon-based inorganic devices, one must determine how to produce such nanoscale devices and to recognize the electronic states of a single molecule.The scanning tunneling microscope (STM) developed by G. Binning and H. Rohrer made it possible to visualize atoms and molecules in real space under various atmospheres. In addition, STMs can be used as nanoscopic tools for manipulation of individual atoms and molecules, thus realizing MEDs and nanotechnology.In this article, we present our recent achievements concerning the STM as well as in situ x-ray diffraction studies on the molecular structure of ultrathin films prepared by vacuum evaporation. STM observations with atomic resolution reveal the mechanism of nuclei formation and the crystal-growth process in organic molecules. Computer simulations based on STM images of polar organic molecules with electronic dipoles have elucidated the role of electronic interaction for their aggregation structures.Also, nanometer-sized molecular memory can be created by applying an electronic pulse to the evaporated organic films through the STM tip. Furthermore, we discuss the principle of a newly developed in situ total reflection x-ray diffraction (TRXD) apparatus and its application to the evaluation of crystal structure and molecular orientation in organic thin films during the evaporation process, particularly in regard to the role of the substrate, that is, epitaxial growth on organic molecular crystals.

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