The In-Situ Observation of Organic Thin Films During Growth Process by Using Grazing Incidence X-Ray Diffraction and Fluorescence Methods

1997 ◽  
pp. 653-658
Author(s):  
Kouichi Hayashi ◽  
Toshihisa Horiuchi ◽  
Kazumi Matsushige
1997 ◽  
Vol 502 ◽  
Author(s):  
Yuji Yoshida ◽  
Hiroshi Takiguchi ◽  
Nobutaka Tanigaki ◽  
Kiyoshi Yase

ABSTRACTWe are investigating well-ordered highly crystalline thin films made using organic molecular beam deposition (OMBD) since it is important to control the formation mechanism at the initial growth process. Then, we developed a new in situ technique of energy dispersive grazing incidence X-ray diffraction utilized within an ultrahigh vacuum system. This technique (in situ ED-GID) makes it possible to examine the crystal structure, orientation and morphology of organic thin films during deposition without any damage to the film. In the present review, we examined the growth process of thin films of functional organic dyes, fullerene (C60) and p-sexiphenyl (6P) by using this in situ ED-GID. The crystal strucutre and molecular orientation in epitaxially-grown thin films were confirmed during the initial stages of growth. Also, the morphology of C60 thin films was examined during the deposition. As a result, it was confirmed that the decay curves of X-ray fluorescence indicate different island growth in C60 thin films.


1995 ◽  
Vol 39 ◽  
pp. 659-664 ◽  
Author(s):  
Kenji Ishida ◽  
Akinori Kita ◽  
Kouichi Hayashi ◽  
Toshihisa Horiuchi ◽  
Shoichi Kal ◽  
...  

Thin film technology is rapidly evolving today, and the characterization of the thin film and its surface have become very important issue not only from scientific but also technological viewpoints. Although x-ray diffraction measurements have been used as suitable evaluation methods in crystallography studies, its application to the structural evaluation of the thin films, especially organic one having the low electron densities, is not easy due to the small amounts of scattering volume and the high obstructive scattering noise from the substrate. However, the x-ray diffraction measurements under grazing incidence will aid not only in overcoming the such problems but also in analyzing in-plane structure of the thin films. Therefore, so-called grazing incidence x-ray diffraction (GIXD) has been recognized as one of the most powerful tools for the surface and thin film studies.


1995 ◽  
Vol 39 ◽  
pp. 653-658 ◽  
Author(s):  
Kouichi Hayashi ◽  
Toshihisa Horiuchi ◽  
Kazumi Matsushige

Today, many researchers investigate extensively the molecular arrangement techniques for various organic materials at a nano meter scale in order to fabricate the organic thin films with novel electronic and photonic functions. For achieving this purpose, it is most important to understand the mechanism of molecular orientation during a film growth process. Thus, it have been strongly desired to develop the measuring system, which enables us to evaluate the crystal structures and molecular orientations of organic ultra thin films during the growth process. For inorganic materials, structural observations of the films grown by a molecular beam epitaxy (MBE) technique are generally conducted by using a reflection high energy electron diffraction (RHEED) method. But, this method can not be applying for many organic thin films because an electron beam destroy them. Since the organic molecules are stable to the x-rays, x-ray fluorescent and diffraction methods are suitable for such investigations of organic thin films.


1997 ◽  
pp. 659-664
Author(s):  
Kenji Ishida ◽  
Akinori Kita ◽  
Kouichi Hayashi ◽  
Toshihisa Horiuchi ◽  
Kazumi Matsushige ◽  
...  

1993 ◽  
Vol 312 ◽  
Author(s):  
James A. Bain ◽  
Bruce M. Clemens ◽  
Sean Brennan

AbstractThe heteropitaxial growth of (111) Pt on (0001) sapphire and of (0001) Co on (111) Pt on (0001) sapphire has been observed in-situ using grazing incidence x-ray scattering (GIXS). The in-plane lattice parameters of the Pt and Co phases have been measured as a function of film thickness in the regime from two monolayers to 200 monolayers, Relaxation of elastic strain with thickness has been quantified. X-ray reflections consistent with stacking faults in the Co films have been observed and monitored as a function of thickness, giving a measure of the stacking fault density. A distinct Co phase was observed at two monolayers of Co on a thick Pt layer, indicating an incoherent interface between the Co and Pt, even at this very early stage of deposition.


MRS Bulletin ◽  
1995 ◽  
Vol 20 (6) ◽  
pp. 26-31 ◽  
Author(s):  
Kazumi Matsushige

Recently, organic molecules and their complexes with inorganic or metallic materials have drawn many researchers' interest as candidate materials for nanoscale electronic devices of the next generation, especially since Carter's proposal on molecular electronic devices (MEDs) with the functions of gating, switching, memory, etc. in one molecule. However, in order to build such nanoscopic organic electronic devices to replace conventional silicon-based inorganic devices, one must determine how to produce such nanoscale devices and to recognize the electronic states of a single molecule.The scanning tunneling microscope (STM) developed by G. Binning and H. Rohrer made it possible to visualize atoms and molecules in real space under various atmospheres. In addition, STMs can be used as nanoscopic tools for manipulation of individual atoms and molecules, thus realizing MEDs and nanotechnology.In this article, we present our recent achievements concerning the STM as well as in situ x-ray diffraction studies on the molecular structure of ultrathin films prepared by vacuum evaporation. STM observations with atomic resolution reveal the mechanism of nuclei formation and the crystal-growth process in organic molecules. Computer simulations based on STM images of polar organic molecules with electronic dipoles have elucidated the role of electronic interaction for their aggregation structures.Also, nanometer-sized molecular memory can be created by applying an electronic pulse to the evaporated organic films through the STM tip. Furthermore, we discuss the principle of a newly developed in situ total reflection x-ray diffraction (TRXD) apparatus and its application to the evaluation of crystal structure and molecular orientation in organic thin films during the evaporation process, particularly in regard to the role of the substrate, that is, epitaxial growth on organic molecular crystals.


2001 ◽  
Vol 79 (15) ◽  
pp. 2444-2446 ◽  
Author(s):  
Kyeong Seok Lee ◽  
Yong Kwan Kim ◽  
Sunggi Baik ◽  
Jung Kim ◽  
II Sub Jung

2021 ◽  
Vol 54 (5) ◽  
Author(s):  
Esther H. R. Tsai ◽  
Yu Xia ◽  
Masafumi Fukuto ◽  
Yueh-Lin Loo ◽  
Ruipeng Li

Characterization of thin films is of paramount importance for evaluating material processing outcomes/efficiency as well as establishing structure–property/performance relationships. This article introduces grazing-incidence diffraction tomography (GID tomography), a technique that combines grazing-incidence X-ray scattering and computed tomography to quantitatively determine the dimension and orientation of crystalline domains in thin films without restrictions on the beam coherence, substrate type or film thickness. This computational method extends the capability of synchrotron beamlines by utilizing standard X-ray scattering experiment setups.


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