a-Si:H Thin Film Transistors on Rollable 25-μM Thick Steel Foil

1998 ◽  
Vol 507 ◽  
Author(s):  
E.Y. Ma ◽  
S. Wagner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Steel Substrate ◽  
Low Cost ◽  
Laser Printer ◽  
Radius Of Curvature ◽  
Mechanical Alignment ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Thick Steel

ABSTRACTWe report the first amorphous silicon thin film transistors (TFTs) on flexible, ultra-thin substrates of 25 μm thick stainless steel foil. The transistors remain operational under convex or concave bending down to 2.5 mm radius of curvature. Taking advantage of the flexibility and resiliency of these devices, we have successfully fabricated TFTs using only xerographic toner masks printed directly on to the steel substrate and using mechanical alignment in the laser printer to obtain the necessary overlay accuracy. The goal of our work is to develop a foldable active-matrix transistor backplane, at low cost and high throughput, for use in highly rugged and portable applications such as foldable intelligent maps. Our results suggest that such foldable backplane circuits are feasible.

a-Si:H Thin-Film Transistors on Rollable 25-µ;m Thick Steel Foil

1998 ◽  
Vol 508 ◽  
Author(s):  
E.Y. Ma ◽  
S. Wagner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Steel Substrate ◽  
Low Cost ◽  
Laser Printer ◽  
Radius Of Curvature ◽  
Mechanical Alignment ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Thick Steel

AbstractWe report the first amorphous silicon thin film transistors (TFTs) on flexible, ultra-thin substrates of 25 µm thick stainless steel foil. The transistors remain operational under convex or concave bending down to 2.5 mm radius of curvature. Taking advantage of the flexibility and resiliency of these devices, we have successfully fabricated TFTs using only xerographic toner masks printed directly on to the steel substrate and using mechanical alignment in the laser printer to obtain the necessary overlay accuracy. The goal of our work is to develop a foldable active-matrix transistor backplane, at low cost and high throughput, for use in highly rugged and portable applications such as foldable intelligent maps. Our results suggest that such foldable backplane circuits are feasible.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

scholarly journals An AMOLED Pixel Circuit Based on LTPS Thin-film Transistors with Mono-Type Scanning Driving

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 574
Author(s):  
Jianyuan Ke ◽  
Lianwen Deng ◽  
Liying Zhen ◽  
Qing Wu ◽  
Congwei Liao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Light Emitting Diode ◽  
Monte Carlo Analysis ◽  
Internal Resistance ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Ir Drop ◽  
Control Functions ◽  
Pixel Circuit

Using low-temperature poly-silicon thin-film transistors (LTPS TFTs) as a basis, a pixel circuit for an active matrix organic light-emitting diode (AMOLED) with narrow bezel displays was developed. The pixel circuit features mono-type scanning signals, elimination of static power lines, and pixel-integrated emitting control functions. Therefore, gate driver circuits of the display bezel can be simplified efficiently. In addition, the pixel circuit has a high-resolution design due to an increase of the pulse width of the scan signal to extend the threshold voltage and internal–resistance drop (IR drop) detection period. Further, regarding the influences of process–voltage–temperature (PVT) variation in the pixel circuit, comparison investigations were carried out with the proposed circuit and other pixel circuits with mono-type scanning signals using Monte Carlo analysis. The feasibility of the proposed pixel circuit is well demonstrated, as the current variations can be reduced to 2.1% for the supplied power reduced from 5 V to 3 V due to IR drop, and the current variation is as low as 10.6% with operating temperatures from –40 degrees to 85 degrees.

Active-Matrix Field Emission Display with Amorphous Silicon Thin-Film Transistors and Mo-Tip Field Emitter Arrays

ETRI Journal ◽  
2002 ◽  
Vol 24 (4) ◽  
pp. 290-298 ◽  
Author(s):  
Yoon-Ho Song Song ◽  
C-S Hwang Hwang ◽  
Y-R Cho Cho ◽  
B-C Kim Kim ◽  
S-D Ahn Ahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Field Emission ◽  
Thin Film Transistors ◽  
Field Emission Display ◽  
Silicon Thin Film ◽  
Field Emitter ◽  
Active Matrix ◽  
Field Emitter Arrays
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