Silicon-Framed Tensile Specimens: Techniques and Results

1998 ◽  
Vol 518 ◽  
Author(s):  
D. T. Read

AbstractThe silicon-framed tensile specimen design has been used in tensile tests of thin films of a variety of metals and epitaxial silicon. A piezo-actuated microtensile test device holds the specimen while the silicon frame is cut just before testing, imposes the tensile displacement, and provides voltages proportional to force and displacement. This technique is appropriate for films that are hundreds of micrometers long, tens to a few hundred micrometers wide, and from 0.3 to 15 micrometers thick. The specimen film must be amenable to lithographic patterning, must adhere well to the silicon substrate, and must resist a silicon etchant. The specimen fabrication is a bulk-micromachining process, because the silicon substrate is etched through underneath the specimen film. Uniaxial yield strength, ultimate tensile strength, and elongation to maximum load can be measured using the microtensile tester. The addition of laser illumination and digital photography allows implementation of electronic speckle pattern interferometry, for accurate measurement of local displacement. This addition allows evaluation of the tensile Young's modulus. Compared to bulk material, thin films of copper and aluminum have lower apparent Young's moduli, higher yield and ultimate tensile strengths because of their fine grain size, and lower elongation to failure. Correlation between properties measured by indentation and by tensile testing needs further study.

2001 ◽  
Vol 41 (1) ◽  
pp. 58-62 ◽  
Author(s):  
C. Vial-Edwards ◽  
I. Lira ◽  
A. Martinez ◽  
M. Münzenmayer

2016 ◽  
Vol 827 ◽  
pp. 65-68 ◽  
Author(s):  
Radim Halama ◽  
Lukáš Horňáček ◽  
Luboš Pečenka ◽  
Martin Krejsa ◽  
Jiří Šmach

The presented paper introduces the application of the Electronic Speckle Pattern Interferometry (ESPI) technique for measurements of contours of strains and stresses on 3-D surfaces. The paper focuses on three selected applications. Firstly, the methodology for determining the Poisson ratio of a material from tensile tests is described. Secondly, results of calibration verification of a biaxial extensometer used for measurements of shear strain in comparison with the ESPI measurements are presented. Finally, the experimental analysis of stresses in welds is discussed. As mentioned in the paper, the method is very useful for material testing, as well as for measurements on structural parts in service.


1997 ◽  
Vol 505 ◽  
Author(s):  
F. Macionczyk ◽  
W. Brückner ◽  
G. Reiss

ABSTRACTFor better understanding the mechanical properties of thin films it is helpful to use the same experimental methods as for bulk material, like tensile tests, thereby being able to directly compare the results. However, tensile tests of free-standing metallic thin films are often difficult to perform for reasons of preparation, handling, and stresses in the films. By leaving the metallic film on an elastic substrate tensile tests were performed in a rather simple and precise manner, using a commercial tensile testing machine. Stress-strain curves were determined by separating the force working on the substrate from that working on the film-substrate compound. Those measurements were done at room temperature for Al, AlCu(0. 5 wt %) and Cuo0.57Ni0.42Mn0.01 thin (200–2000 nm) films prepared by magnetron sputtering on 8 μm and 13 μm thick polyimide (Kapton) foils. The film microstructure was characterized by scanning and transmission electron microscopy and X-ray diffraction. The tensile strength of the fine grained films was found to be up to one order of magnitude higher than for the corresponding coarse grained bulk material. Al and AlCu films showed little, CuNi(Mn) films showed no plastical behavior. Crack formation started between 0.3 % and 2 % strain depending on the material, the thermal history, and the grain size.


2004 ◽  
Vol 42 (1) ◽  
pp. 1-8 ◽  
Author(s):  
L. Augulis ◽  
S. Tamulevic̆ius ◽  
R. Augulis ◽  
J. Bonneville ◽  
P. Goudeau ◽  
...  

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.


Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 724
Author(s):  
Sara Massardo ◽  
Alessandro Cingolani ◽  
Cristina Artini

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.


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