Epitaxial Regrowth of a-GaAs/(100) Silicon By Excimer Laser Annealing at 248 nm

1985 ◽  
Vol 53 ◽  
Author(s):  
A. Christou ◽  
T. Efthimiopoulos ◽  
G. Kyriakidis ◽  
C. Varmazis
Keyword(s):  
Energy Density ◽  
Ion Implantation ◽  
Excimer Laser ◽  
Field Effect ◽  
Laser Annealing ◽  
Field Effect Transistors ◽  
Critical Energy ◽  
Excimer Laser Annealing ◽  
Epitaxial Regrowth ◽  
Critical Energy Density

ABSTRACTExcimer laser annealing at 248 nm has resulted in the recrystallization of a-GaAs on (100) silicon. An AlAs encapsulation layer was found to be necessary to prevent the loss of arsenic during laser annealing. An energy density of 105 mJ/cm2 was the critical energy density which gave optimum results. Field effect transistors were fabricated on the regrown (100) GaAs utilizing ion implantation for the n-type channel, and resulted in a transconductance of 70–80 mS/mm.

scholarly journals Crystal Growth of Polycrystalline Silicon by Excimer Laser Annealing-Influence of Hydrogens and Substrate Thermal Conductivity on the Critical Energy Density-

Shinku ◽  
2003 ◽  
Vol 46 (10) ◽  
pp. 745-751 ◽  
Author(s):  
Naoto MATSUO ◽  
Naoya KAWAMOTO ◽  
Fakhrul Anwar Bin Abd AZIZ ◽  
Isao HASEGAWA ◽  
Kouji YAMANO ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Crystal Growth ◽  
Energy Density ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Critical Energy ◽  
Excimer Laser Annealing ◽  
Critical Energy Density

The effect of excimer laser annealing on ZnO nanowires and their field effect transistors

2009 ◽  
Vol 20 (9) ◽  
pp. 095203 ◽  
Author(s):  
Jongsun Maeng ◽  
Sungho Heo ◽  
Gunho Jo ◽  
Minhyeok Choe ◽  
Seonghyun Kim ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Field Effect ◽  
Laser Annealing ◽  
Field Effect Transistors ◽  
Zno Nanowires ◽  
Excimer Laser Annealing

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

Effects of selective Si ion implantation on excimer laser annealing of dehydrogenated a-Si film

2002 ◽  
Vol 299-302 ◽  
pp. 715-720 ◽  
Author(s):  
Min-Cheol Lee ◽  
Kee-Chan Park ◽  
In-Hyuk Song ◽  
Min-Koo Han
Keyword(s):  
Ion Implantation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Si Ion Implantation

Ultrashallow P+/n junction formed by B[sub 18]H[sub 22]+] Ion Implantation and Excimer Laser Annealing

2006 ◽  
Author(s):  
Sungho Heo ◽  
Dongkyu Lee ◽  
H. T. Cho ◽  
W. A. Krull ◽  
Hyunsang Hwang
Keyword(s):  
Ion Implantation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Fast-Pulse Excimer-Laser-Induced Processes in a-Si:H

1989 ◽  
Vol 164 ◽  
Author(s):  
K. Winer ◽  
R.Z. Bachrach ◽  
R.I. Johnson ◽  
S.E. Ready ◽  
G.B. Anderson ◽  
...  
Keyword(s):  
Energy Density ◽  
Excimer Laser ◽  
Impurity Concentration ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Excimer Laser Annealing ◽  
Near Surface ◽  
Pulse Excimer Laser ◽  
Fast Pulse

AbstractThe effects of fast-pulse excimer laser annealing of a-Si:H were investigated by measurements of electronic transport properties and impurity concentration depth profiles as a function of incident laser energy density. The dc dark conductivity of laser-annealed, highly-doped a-Si:H increases by a factor of ∼350 above a sharp laser energy density threshold whose magnitude increases with decreasing impurity concentration and which correlates with the onset of hydrogen evolution from and crystallization of the near-surface layer. The similarities between the preparation and properties of laser-crystallized a-Si:H and pc-Si:H are discussed.

Poly-Si Thin Film Transistors Fabricated By Employing Selective Si Ion-Implantation And Excimer Laser Annealing

2000 ◽  
Vol 609 ◽  
Author(s):  
Min-Cheol Lee ◽  
Jae-Hong Jeon ◽  
Jin-Woo Park ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Ion Implantation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Density ◽  
Mask Pattern ◽  
Excimer Laser Annealing ◽  
Boundary Location ◽  
Si Ion Implantation ◽  
Annealing Method

ABSTRACTA new excimer laser annealing method is proposed in order to produce the poly-Si film with low defect density and large grain, by combining the selective Si ionimplantation and excimer laser annealing. Selective Si ion-implantation is employed to form artificial nucleation seeds in a-Si film prior to excimer laser annealing in order to increase the nucleation probability. The grain boundary location in poly-Si film has been controlled through implantation mask, and the grain size around micrometer order is obtained without any other process. TEM result shows that grain boundary is controlled according to mask pattern and the crystallinity of the poly-Si film is improved.

XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts

1986 ◽  
Vol 71 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui
Keyword(s):  
Energy Density ◽  
Excimer Laser ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Processing Temperature ◽  
Excimer Laser Annealing ◽  
Channel Mobility ◽  
First Time ◽  
Xecl Excimer Laser

AbstractMo-gate n-channel poly-Si TFTs have been fabricated for the first time at a low processing temperature of 26°C. 500 to 1000A thick a-Si:H was successfully crystallized by pulsed XeCl excimer laser (308nm) annealing without heating the glass substrate. The channel mobility of the TFT was 180 cm2/V.sec when the a-Si:H was annealed at energy density of 200 mJ/cm2.

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