XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts

1986 ◽  
Vol 71 ◽  
Author(s):  
T. Sameshima ◽  
S. Usui
Keyword(s):  
Energy Density ◽  
Excimer Laser ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Processing Temperature ◽  
Excimer Laser Annealing ◽  
Channel Mobility ◽  
First Time ◽  
Xecl Excimer Laser

AbstractMo-gate n-channel poly-Si TFTs have been fabricated for the first time at a low processing temperature of 26°C. 500 to 1000A thick a-Si:H was successfully crystallized by pulsed XeCl excimer laser (308nm) annealing without heating the glass substrate. The channel mobility of the TFT was 180 cm2/V.sec when the a-Si:H was annealed at energy density of 200 mJ/cm2.

Aligned Polycrystalline Silicon Array Thin Film by XeCl Excimer Laser Annealing for AMOLED Displays

2007 ◽  
Vol 124-126 ◽  
pp. 371-374 ◽  
Author(s):  
C.N. Chen ◽  
G.M. Wu ◽  
W.S. Feng
Keyword(s):  
Thin Film ◽  
Energy Density ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Laser Energy ◽  
Annealing Atmosphere ◽  
Excimer Laser Annealing ◽  
Overlap Ratio ◽  
Xecl Excimer Laser

Low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) are demanded to fabricate high performance liquid crystal displays (LCD) and organic light-emitting diode displays (OLED). The mobility of poly-Si TFT can be two orders of magnitude higher than that of amorphous Si (a-Si) TFT. Excimer laser annealing has been studied to be the most promising technology to meet the stringent requirement in high speed operation. The process parameters were identified as a-Si thickness, laser energy density, overlap ratio, annealing atmosphere and pre-clean condition. The a-Si layer of 40-50 nm was deposited by plasma enhanced chemical vapor deposition (PECVD). The XeCl excimer laser was irradiated on the a-Si film at room temperature under N2 or N2/O2 environment. The energy density ranged 250-400 mJ/cm2, and the overlap ratio was 95-99%. The highly aligned poly-Si array thin film could be obtained. The grain size has been about 0.31x0.33 μm2, and the regular arrangement in poly-Si grains was discussed. In addition, the PMOS TFT has been fabricated from the aligned poly-Si array. The mobility was as high as 100 cm2/Vs and the sub-threshold swing was around 0.24 V/dec. The threshold voltage was -1.25 V and the on/off current ratio was about 106.

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1614-1617
Author(s):  
Cheol-Min Park ◽  
Byung-Hyuk Min ◽  
Juhn-Suk Yoo ◽  
Hong-Seok Choi ◽  
Min-Koo Han
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Gate Oxide ◽  
Excimer Laser Annealing ◽  
In Situ Fabrication ◽  
Xecl Excimer Laser

6.4: Crystallization of Ultra-low Temperature ITO by XeCl Excimer Laser Annealing

2002 ◽  
Vol 33 (1) ◽  
pp. 57 ◽  
Author(s):  
Wonsuk Chung ◽  
Michael O. Thompson ◽  
Paul Wickboldt ◽  
Daniel Toet ◽  
Paul G. Carey
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Xecl Excimer Laser

Experimental Analysis for Low-Temperature Poly-Si Films Produced by Using the Excimer Laser Annealing Method

2006 ◽  
Vol 505-507 ◽  
pp. 277-282 ◽  
Author(s):  
Yu Ru Chen ◽  
Long Sun Chao
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Glass Substrate ◽  
Laser Annealing ◽  
Pulse Number ◽  
Sio2 Layer ◽  
Excimer Laser Annealing ◽  
Melt Pool ◽  
Si Films ◽  
Annealing Method

This paper is to investigate the effects on grain size of different working conditions for making poly Si films by using the excimer laser annealing method. In this research, a KrF excimer laser of 248 nm in wavelength is used to irradiate a-Si films of 0.1 μm in thickness on glass substrate to produce poly-Si ones. The control parameters are laser intensity (200~500 mJ/cm2), pulse number (1~10 shots) and coverage fraction (0~100%). Besides, the effect of a SiO2 layer is also studied, which is utilized as a heat-isolated zone located between the Si film and glass substrate. Average grain sizes from SEM photos are used to analyze the effects of these parameters. Purely from the heat transfer view, the Si film obtains more energy would have the slower cooling or solidification rate, which results in the larger grain. From the experimental results, if the melt pool is within the range of Si film or does not contact its neighboring layer (SiO2 layer or glass substrate), the more absorbed energy from the higher energy intensity, the larger pulse number or the bigger coverage fraction can have the larger average grain size. However, with large enough energy, the melt pool could go through the Si film and touch the lower layer. This would induce much more nuclei due to the homogeneous nucleation in the pool and the heterogeneous nucleation near the interface between the film and the neighboring layer. The resulting grain size is much smaller than that of the former one. The transition points of these two cases for different control parameters can be obtained from the experimental results in this study. When the energy from the laser is small, the SiO2 layer acts like a heat absorber and makes the grain size smaller than that of not having the SiO2 layer. On the other hand, when the energy is large, the SiO2 layer becomes a heat insulator and makes the grain size larger.

Si. I-x-y. GexCy Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
E. Fogarassy ◽  
D. Dentel ◽  
JJ. Grob ◽  
B. Prévot ◽  
J.P. Stoquert ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Initial Dose ◽  
Laser Annealing ◽  
Film Formation ◽  
Silicon Substrates ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Excimer Laser Crystallization ◽  
First Time

AbstractWe investigate, for the first time, the possibility to crystallize heavily Ge and C implanted silicon substrates by excimer-laser annealing performed in the molten regime. It is demonstrated that the crystalline quality of the laser grown SiGeC alloys strongly depends on the initial dose of implanted carbon.

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