scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

scholarly journals Crystal Growth of Polycrystalline Silicon by Excimer Laser Annealing-Influence of Hydrogens and Substrate Thermal Conductivity on the Critical Energy Density-

Shinku ◽  
2003 ◽  
Vol 46 (10) ◽  
pp. 745-751 ◽  
Author(s):  
Naoto MATSUO ◽  
Naoya KAWAMOTO ◽  
Fakhrul Anwar Bin Abd AZIZ ◽  
Isao HASEGAWA ◽  
Kouji YAMANO ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Crystal Growth ◽  
Energy Density ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Critical Energy ◽  
Excimer Laser Annealing ◽  
Critical Energy Density

Crystal Growth of Silicon Thin Films on Glass by Excimer Laser Annealing: A Molecular-Dynamics Study

2006 ◽  
Vol 45 (5B) ◽  
pp. 4344-4346 ◽  
Author(s):  
Shinji Munetoh ◽  
Takahide Kuranaga ◽  
Byoung Min Lee ◽  
Teruaki Motooka ◽  
Takahiko Endo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Crystal Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films

Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Sang-Myeon Han ◽  
Min-Cheol Lee ◽  
Su-Hyuk Kang ◽  
Moon-Young Shin ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Excimer Laser Annealing ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Recrystallization

AbstractAn ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors

1994 ◽  
Vol 33 (Part 1, No. 4A) ◽  
pp. 2092-2099 ◽  
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Akio Mimura ◽  
Nobutake Konishi
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Ion Doping ◽  
Si Thin Film

Excimer Laser Annealing of PbZr0.4Ti0.6O3 Thin Film at Low Temperature

2006 ◽  
Vol E89-C (10) ◽  
pp. 1460-1464 ◽  
Author(s):  
W. XIANYU ◽  
H. S.-y. CHO ◽  
J. Y. KWON ◽  
H. YIN ◽  
T. NOGUCHI
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing

6.4: Crystallization of Ultra-low Temperature ITO by XeCl Excimer Laser Annealing

2002 ◽  
Vol 33 (1) ◽  
pp. 57 ◽  
Author(s):  
Wonsuk Chung ◽  
Michael O. Thompson ◽  
Paul Wickboldt ◽  
Daniel Toet ◽  
Paul G. Carey
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Xecl Excimer Laser

Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing

2011 ◽  
Vol 11 (3) ◽  
pp. S66-S69 ◽  
Author(s):  
Min Gyu Kang ◽  
Kwang Hwan Cho ◽  
Seung Min Oh ◽  
Young Ho Do ◽  
Chong Yun Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Bst Thin Films ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

2014 ◽  
Vol 61 (9) ◽  
pp. 3060-3065 ◽  
Author(s):  
Chen Wang ◽  
Cheng Li ◽  
Guangyang Lin ◽  
Weifang Lu ◽  
Jiangbin Wei ◽  
...  
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Rectification Ratio ◽  
Excimer Laser Annealing ◽  
Shallow Junction
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