Composition separation in the surface layers of a Ni-Cu foil during ion implantation

The objective of the work was to study the effect of high-dose ion implantation (HDII) of NiTi surface layers with Si Ti, or Zr, on the NiTi biocompatibility. The biocompatibility was judged from the intensity and peculiarities of proliferation of mesenchymal stem cells (MSCs) on the NiTi specimen surfaces treated by special mechanical, electrochemical, and HDII methods and differing in chemical composition, morphology, and roughness. It is shown that the ion-implanted NiTi specimens are nontoxic to rat MSCs. When cultivated with the test materials or on their surfaces, the MSCs retain the viability, adhesion, morphology, and capability for proliferationin vitro, as evidenced by cell counting in a Goryaev chamber, MTT test, flow cytometry, and light and fluorescence microscopy. The unimplanted NiTi specimens fail to stimulate MSC proliferation, and this allows the assumption of bioinertness of their surface layers. Conversely, the ion-implanted NiTi specimens reveal properties favorable for MSC proliferation on their surface.

Download Full-text

Ion implantation and fatigue crack initiation: interaction of persistent slip bands with modified surface layers Grummon, D.S., Morrison, D.J., Jones, J.W. and Was, G.S. Mater. Sci. Eng. A Aug. 1989 115, (1–2), 331–336

International Journal of Fatigue ◽

10.1016/0142-1123(90)90806-p ◽

1990 ◽

Vol 12 (2) ◽

pp. 150-150

Keyword(s):

Fatigue Crack ◽

Crack Initiation ◽

Ion Implantation ◽

Fatigue Crack Initiation ◽

Surface Layers ◽

Slip Bands ◽

Persistent Slip Bands ◽

Modified Surface

Download Full-text

Dislocation structure in near-surface layers of pure metals formed by ion implantation

Materials Science and Engineering A ◽

10.1016/0921-5093(89)90700-4 ◽

1989 ◽

Vol 115 ◽

pp. 337-341 ◽

Cited By ~ 29

Author(s):

A.N Didenko ◽

A.I Rjabchikov ◽

G.P Isaev ◽

N.M Arzubov ◽

Yu.P Sharkeev ◽

...

Keyword(s):

Ion Implantation ◽

Dislocation Structure ◽

Surface Layers ◽

Near Surface ◽

Pure Metals

Download Full-text

Characterization of Crystallinity of SiC Surface Layers Produced by Ion Implantation

phys stat sol (a) ◽

10.1002/1521-396x(200012)182:2<653::aid-pssa653>3.0.co;2-i ◽

2000 ◽

Vol 182 (2) ◽

pp. 653-660 ◽

Cited By ~ 4

Author(s):

E. Theodossiu ◽

H. Baumann ◽

M. Klimenkov ◽

W. Matz ◽

K. Bethge

Keyword(s):

Ion Implantation ◽

Surface Layers

Download Full-text

Effects of Ion Implantation Doping on the Formation of Titanium Silicide on the Diffusion Layers

MRS Proceedings ◽

10.1557/proc-54-769 ◽

1985 ◽

Vol 54 ◽

Cited By ~ 6

Author(s):

H. Matsui ◽

H. Ohtsuki ◽

M. Ino ◽

S. Ushio

Keyword(s):

Ion Implantation ◽

Oxide Films ◽

Titanium Silicide ◽

Si Substrate ◽

Surface Layers ◽

Critical Dose ◽

Diffusion Layers

ABSTRACTSi samples, with and without masking oxide films, implanted with various doses of As, P, or BF2 have been evaluated on the formation of titanium suicides from titanium films. In all cases, suicide reaction for implantation with masking oxide films is more difficult than that for implantation without masking oxide films. Suicide reaction becomes more difficult with decreasing implant energy in the range over a critical dose. In the case of implantation with masking oxide films, knocked oxygen has been found at the surface of Si substrate. Suicide formation after removing the surface layers containing considerable amount of knocked oxygen with argon back-sputtering is as easy as suicide formation for implantation without masking oxide. The difficulty of Ti silicidation for implantation with masking oxide films is believed to be due to the effects of interference from knocked oxygen.

Download Full-text