Growth, Microstructural and Ferroelectric Properties of PZT Films Prepared by Pulsed Laser Deposition Method

1998 ◽  
Vol 541 ◽  
Author(s):  
Ashok Kumar ◽  
M.R. Alam ◽  
M. Shamsuzzoha
Keyword(s):  
Lead Zirconate Titanate ◽  
Laser Energy ◽  
Ferroelectric Properties ◽  
Random Access ◽  
Ferroelectric Thin Film ◽  
Lead Zirconate ◽  
Test System ◽  
Cross Sectional ◽  
Preparation Conditions ◽  
Krf Excimer Laser

AbstractPb(ZrxTi1−xO3 (lead zirconate titanate or PZT) ferroelectric thin film capacitors are of considerable interest for the realization of memory devices such as nonvolatile random access memories (NVRAMs). The PZT capacitors were prepared on platinized silicon Pt/(100)Si using conducting oxide LaxSrl.xCOO (lanthanum strontium cobalt oxide or LSCO) as electrodes. The PZT and LSCO thin films were deposited by the KrF excimer laser ablation technique. The optimum preparation conditions such as oxygen pressure, laser energy influence and substrate temperature were investigated. The PZT and LSCO films grown on Pt/(100)Si are polycrystalline. The crystallographic properties of the films were determined using X-ray diffractometer (XRD) method. The cross-sectional transmission electron microscope showed very smooth interface among different layers of films. The electrical characterizations of the films including hysteresis loop, fatigue, and retention properties were determined by the RT66A Standardized Ferroelectric Test System.

Synthesis and Characterization of Ferroelectric Thin Films by KrF Excimer Laser Ablation for Memory Applications

1998 ◽  
Vol 526 ◽  
Author(s):  
Ashok Kumar ◽  
M.R. Alam
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Lead Zirconate Titanate ◽  
Laser Energy ◽  
Ferroelectric Thin Film ◽  
Lead Zirconate ◽  
Test System ◽  
Excimer Laser Ablation ◽  
Krf Excimer Laser

AbstractPb(ZrxTi1-x)O3 (lead zirconate titanate or PZT) ferroelectric thin film capacitors are of considerable interest for the realization of memory devices such as nonvolatile random access memories (NVRAMs). The PZT capacitors were prepared on platinized silicon Pt/(100)Si using conducting oxide LaxSr1-xCoO3 (lanthanum strontium cobalt oxide or LSCO) as electrodes. The PZT and LSCO thin films were deposited by the KrF excimer laser ablation technique. The optimum preparation conditions such as oxygen pressure, laser energy influence and substrate temperature were investigated. The PZT and LSCO films grown on Pt/(100)Si are polycrystalline. The crystallographic properties of the films were determined using X-ray diffractometer (XRD) method. The electrical characterizations of the films including hysteresis loop, fatigue, and retention properties were determined by the RT66A Standardized Ferroelectric Test System.

Top Electrode Area Dependence on Displacement Property of Lead Zirconate Titanate Films Prepared by Chemical Solution Deposition Process

2002 ◽  
Vol 748 ◽  
Author(s):  
Takashi Iijima ◽  
Sachiko Ito ◽  
Hirofumi Matsuda
Keyword(s):  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Strain Curve ◽  
Deposition Process ◽  
Lead Zirconate ◽  
Test System ◽  
Piezoelectric Response ◽  
Hysteresis Curve ◽  
Electrode Diameter ◽  
Maximum Displacement

ABSTRACTEffects on ferroelectric and piezoelectric properties of top-electrode diameter variance from 80 to 8 μm were investigated using an AFM probing system connected with a ferroelectric test system with bipolar and unipolar signals at 5 Hz. The Pt and 1.2-μm-thick PZT layers were etched off to prepare Pt top electrode etched samples or Pt/PZT stack etched samples. In the case of bipolar measurement, the top electrode diameter did not affect ferroelectric properties, while the maximum displacement of the butterfly-shaped hysteresis curve, related with piezoelectric response, increased with decreasing top-electrode diameter. On the other hand, the longitudinal piezoelectric constant, AFM d33, calculated from the strain curve slope at 5 Hz, +5 V, increased with decreasing top-electrode diameter. The average value of the Pt/PZT stack-etched AFM d33 almost equals that of Pt-etched AFM d33. Average AFM d33 of the 8-μm-diameter Pt-etched and Pt/PZT stack-etched samples are 129 and 135 pm/V, respectively.

Pulsed laser-ablation deposition of thin films of molybdenum silicide and its properties as a conducting barrier for ferroelectric random-access memory technology

1999 ◽  
Vol 14 (3) ◽  
pp. 940-947 ◽  
Author(s):  
Sucharita Madhukar ◽  
S. Aggarwal ◽  
A. M. Dhote ◽  
R. Ramesh ◽  
S. B. Samavedam ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Random Access ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Lead Zirconate ◽  
Capacitive Coupling ◽  
Molybdenum Silicide

We report on the feasibility of using molybdenum silicide as a conducting barrier for integration of ferroelectric lead zirconate titanate capacitors on Si. Thin films of MoSi2 were deposited by pulsed laser-ablation deposition (PLD). The silicide films showed a structural transition from amorphous to orthorhombic to tetragonal phase as the temperature of deposition was changed from room temperature to 900 °C. The four-probe resistivity and surface roughness of the films decreased with an increase in the deposition temperature and crystallinity of the phase. Ferroelectric (La, Sr)CoO3/Pb(Nb, Zr, Ti)O3/(La, Sr)CoO3 capacitors were grown on Si/poly Si/MoSi2, and Si/poly Si/MoSi2/Pt structures. Transmission electron microscopy (TEM) studies of the MoSi2/LSCO and MoSi2/Pt/LSCO heterostructures indicated the formation of a thin layer of SiO2. In the case of Pt/MoSi2, Pt reacts with the silicide and forms PtSi, consuming the entire platinum layer and, thus, makes it unsuitable as a composite barrier. Electrical testing of the LSCO/PNZT/LSCO capacitors through capacitive coupling showed desirable ferroelectric properties on these substrates.

The Role of Processing Parameters in Variation of Microstruture of Sol-Gel Derived Lead Zirconate Titanate Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Chang Jung Kim ◽  
Tae-Young Kim ◽  
Ilsub Chung ◽  
In Kyung Yoo
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Secondary Phase ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Test System ◽  
Pzt Thin Films ◽  
Force Microscopy

AbstractThe PZT thin films were fabricated to investigate the effect of sol-gel processing parameters on the physical and the electrical properties. The films were made with different amount of excess Pb precursors and drying temperatures, and then annealed in various ambients. The physical properties of the films such as crystallinity and microstructure were evaluated using x-ray diffraction, scanning electron microscopy and atomic force microscopy. The ferroelectric properties and current density characteristics of the films were investigated using a standarized feiroelectric test system and pA meter, respectively. It is found that the drying temperature was playing a key role in the formation of the secondary phase on the PZT thin films. In addition, it turned out that the use of nitrogen as an annealing ambient promoted overall ferroelectric properties, when compared to oxygen ambients.

Use of Electron Diffraction for Determining the Orientation of Rapid Thermally Annealed Lead Zirconate Titanate Thin Film On (111) Pt Coated Si Substrate

1999 ◽  
Vol 5 (S2) ◽  
pp. 828-829
Author(s):  
S.C. Cheng ◽  
T. Su ◽  
S. Trolier-McKinstry
Keyword(s):  
Thin Film ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Cross Sectional ◽  
Domain Structures ◽  
Zirconate Titanate ◽  
Solution Preparation ◽  
Pyroelectric Detectors

Lead zirconate titanate (PZT) is a perovskite-staictured material which is ferroelectric over most of the solid solution and which exhibits a range of electrical and electromechanical properties depending on the Zr/Ti ratio. Thin film PZT is currently being developed for piezoelectric actuators, ferroelectric memory devices and pyroelectric detectors. The ferroelectric properties and microstructures of the PZT films depend upon numerous processing parameters.In this research, sol-gel PZT films crystallized by rapid thermal annealing at 700°C for 30 seconds were investigated. A modification of the procedure described by Budd, Dey and Payne was utilized for the solution preparation. The electrodes/substrates which have been used for the deposition of PZT are Pt/Ti/SiO,/Si. The approximate thicknesses of Pt, Ti and SiO2 layers are 150 nm, 20 nm and 1000 nm, respectively. Transmission electron microscopy (TEM) was used to reveal the microstructure of the films, including the interfacial characteristics, grain sizes and domain structures. Cross sectional specimens were prepared by the following procedures.

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

scholarly journals Ferroelectric properties of lead‐zirconate‐titanate films prepared by laser ablation

1991 ◽  
Vol 58 (25) ◽  
pp. 2910-2912 ◽  
Author(s):  
Hideo Kidoh ◽  
Toshio Ogawa ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu
Keyword(s):  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Zirconate Titanate
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