Properties of Electron Emitting Diode Fabricated with Single-Crystalline Diamond

1999 ◽  
Vol 558 ◽  
Author(s):  
Toshimichi Ito ◽  
Masaki Nishimura
Keyword(s):  
Electric Fields ◽  
High Efficiency ◽  
High Resistivity ◽  
Electron Hole ◽  
Single Crystalline ◽  
Diamond Surfaces ◽  
Diamond Layer ◽  
Electron Emissions ◽  
High Electric Fields ◽  
P Type

ABSTRACTHighly efficient electron emitting diodes have been fabricated using single-crystalline diamond films epitaxially grown on high-pressure synthesized (100) diamond. These diodes have an internal electrode of a graphitized layer buried below an overgrown diamond layer with a very high resistivity, the structure of which is formed by a combination of heavy ionimplantation and overgrowth techniques. The efficiency of electron emissions from sufficiently hydrogenated p-type diamond surfaces reached 100% in the best case. It is found that H atoms can passivate internal defects created during the ion implantation process. The mechanism of the high efficiency is discussed in relation to electron-hole creations in the thin diamond layer under extremely high electric fields of 107 V/cm.

Flexible cyclic-olefin with enhanced dipolar relaxation for harsh condition electrification

2021 ◽  
Vol 118 (45) ◽  
pp. e2115367118
Author(s):  
Chao Wu ◽  
Ajinkya A. Deshmukh ◽  
Omer Yassin ◽  
Jierui Zhou ◽  
Abdullah Alamri ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Electric Fields ◽  
High Efficiency ◽  
Dielectric Materials ◽  
Organic Polymer ◽  
Dipolar Relaxation ◽  
High Electric Fields ◽  
High Dielectric ◽  
Harsh Condition

Flexible large bandgap dielectric materials exhibiting ultra-fast charging-discharging rates are key components for electrification under extremely high electric fields. A polyoxafluoronorbornene (m-POFNB) with fused five-membered rings separated by alkenes and flexible single bonds as the backbone, rather than conjugated aromatic structure typically for conventional high-temperature polymers, is designed to achieve simultaneously high thermal stability and large bandgap. In addition, an asymmetrically fluorinated aromatic pendant group extended from the fused bicyclic structure of the backbone imparts m-POFNB with enhanced dipolar relaxation and thus high dielectric constant without sacrificing the bandgap. m-POFNB thereby exhibits an unprecedentedly high discharged energy density of 7.44 J/cm3 and high efficiency at 150 °C. This work points to a strategy to break the paradox of mutually exclusive constraints between bandgap, dielectric constant, and thermal stability in the design of all-organic polymer dielectrics for harsh condition electrifications.

INDIUM NITRIDE: A NEW MATERIAL FOR HIGH EFFICIENCY, COMPACT, 1550nm LASER-BASED TERAHERTZ SOURCES IN CHEMICAL AND BIOLOGICAL DETECTION

2008 ◽  
Vol 18 (01) ◽  
pp. 3-9
Author(s):  
MICHAEL WRABACK ◽  
GRACE D. CHERN ◽  
ERIC D. READINGER ◽  
PAUL H. SHEN ◽  
GREGOR KOBLMÜLLER ◽  
...  
Keyword(s):  
Electron Density ◽  
Electric Fields ◽  
High Efficiency ◽  
Indium Nitride ◽  
Strong Dependence ◽  
High Mobility ◽  
Pump Wavelength ◽  
Thz Spectroscopy ◽  
New Material ◽  
P Type

Indium nitride ( InN ) is identified as a promising terahertz (THz) emitter based on the optical and electronic properties of high quality In - and N -face samples. Time domain THz spectroscopy has been employed to measure the pump wavelength and background carrier concentration dependence of THz emission from InN . There is no discernable difference between the In - and N -face InN samples, as expected for the improved crystalline quality and concomitant low background electron density and high mobility for both polarities. While there is only a weak dependence of THz signal on pump wavelength from 800 nm to 1500 nm, there is a strong dependence on background electron density. Modeling shows that the dominant mechanism for THz generation in bulk InN is the current associated with the diffusion of the photo-generated electrons at elevated electron temperature (photo-Dember effect) and the redistribution of the background electrons under drift, with larger screening from the higher mobility electrons as compared to holes. Compensation or p -type doping in conjunction with manipulation of the large internal electric fields in InN/InGaN nanostructures should lead to significant improvements in THz emitters.

Current Status of Solid-State X-Ray Systems

1985 ◽  
Vol 43 ◽  
pp. 158-161
Author(s):  
Martin Peckerar ◽  
Anastasios Tousimis
Keyword(s):  
Solid State ◽  
Electric Fields ◽  
Spectral Lines ◽  
Current Status ◽  
Mobile Charge ◽  
Electron Hole ◽  
X Ray ◽  
Sensing Systems ◽  
Transmission Electron ◽  
Electron Microscopes

Solid state x-ray sensing systems have been used for many years in conjunction with scanning and transmission electron microscopes. Such systems conveniently provide users with elemental area maps and quantitative chemical analyses of samples. Improvements on these tools are currently sought in the following areas: sensitivity at longer and shorter x-ray wavelengths and minimization of noise-broadening of spectral lines. In this paper, we review basic limitations and recent advances in each of these areas. Throughout the review, we emphasize the systems nature of the problem. That is. limitations exist not only in the sensor elements but also in the preamplifier/amplifier chain and in the interfaces between these components.Solid state x-ray sensors usually function by way of incident photons creating electron-hole pairs in semiconductor material. This radiation-produced mobile charge is swept into external circuitry by electric fields in the semiconductor bulk.

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

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