In-Situ Optical Characterization of Titanium Nitride Thin Films for Applications in Microelectronics

1999 ◽  
Vol 569 ◽  
Author(s):  
P. Patsalas ◽  
S. Logothetidis ◽  
C.A. Dimitriadis

ABSTRACTTitanium Nitride (TiNx) thin films were deposited on Si(100) by reactive magnetron sputtering. The varied deposition conditions were the substrate temperature (Td) (27 - 650 °C) and the negative bias voltage (Vb) applied to the substrate (0 - 200 V) in order to produce TiNx films with various compositions and structural characteristics. The deposition process was monitored in-situ by Spectroscopic Ellipsometry in the spectral range 1.5–5.5 eV. Determination of the film composition was made through the measured screened plasma energy ωps while the electrical resistivity of TiNx was studied in terms of the unscreened plasma energy ωpu. ωpu was calculated by an optical model including a Drude term and Lorentz oscillator terms and their dependence on Td and Vb was studied. The ωpu was found to increase with Vb until a saturation value was obtained. The saturation value of ωpu depends on the Td.ωpu describes better the TiNx films, since it is directly correlated with their metallic character in terms of the electrical resistivity.

1984 ◽  
Vol 32 ◽  
Author(s):  
Carlo G. Pantano ◽  
C. A. Houser ◽  
R. K. Brow

ABSTRACTThe application of surface analysis techniques to the characterization of sol/gel surfaces and thin films is described. Secondary-ion mass spectroscopy (SIMS), x-ray photoelectron spectroscopy (XPS) and sputter-induced photon spectroscopy (SIPS) are used to measure the composition of multicomponent silicate films, the relative water content of alumina films, the nitrogen content of ammonia treated silica films, and the depth profiles for films on black chrome. The determination of chemical structure using XPS and SIMS is also discussed. Finally, a brief introduction to temperature-programmed desorption (TPD) and its potential for studying surface chemical reactions, in situ, is presented.


2001 ◽  
Author(s):  
Chi Hsiang Pan ◽  
Chien Li Tung

Abstract In this paper, we present a simple method to determine thermal conductivity coefficients (TCC) of thin films with a compact characterization microstructure and by using common measuring apparatus. The microstructure can be fabricated by a simple surface micromachining technique and in situ along with active devices on the same chip. Analytical expressions are derived to calculate the thermal conductivity coefficients of thin films from the experimental data. Experimental results with a heavily n-doped LPCVD poly crystalline silicon film are used herein to demonstrate the effectiveness of the proposed method. The obtained thermal conductivity coefficient seems to decrease a little as temperature increase and the average is around 39 Wm−1 °C−1 at 400°C below.


2008 ◽  
Vol 2008 (27) ◽  
pp. 253-260
Author(s):  
Y. Kuru ◽  
M. Wohlschlögel ◽  
U. Welzel ◽  
E. J. Mittemeijer
Keyword(s):  

1998 ◽  
Vol 73 (2) ◽  
pp. 187-189 ◽  
Author(s):  
M. Yoshimoto ◽  
H. Maruta ◽  
T. Ohnishi ◽  
K. Sasaki ◽  
H. Koinuma

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