Growth of Co ON Ag(100): A Comparison of Ultra Low Energyion Beam Deposition and Thermal Deposition

1999 ◽  
Vol 585 ◽  
Author(s):  
B. Degroote ◽  
J. Dekoster ◽  
S. Degroote ◽  
H. Pattyn ◽  
A. Vantomme ◽  
...  

AbstractWe have investigated the growth of Co deposited on Ag(100) with ultra low energy ion beam deposition. The preferred sites of nucleation, the island densities and heights are determined with scanning tunneling microscopy. Submonolayers of Co were ion beam deposited at 300 K using energies between 5 and 30 eV. Preferential growth of islands on the upper side of the mono-atomic Ag steps (i.e. step decoration) is observed for deposition energies of 5 and 15 eV. In addition, 3–4 ML deep holes are formed in the Ag substrate for deposition at 5 eV. At higher deposition energies, the number of holes per surface area decreases. The results are compared with experiments on thermal deposition of Co on Ag(100) as a function of substrate temperature, performed in a previous study.

1999 ◽  
Vol 198-199 ◽  
pp. 731-733 ◽  
Author(s):  
D.E Joyce ◽  
N.D Telling ◽  
J.A Van den Berg ◽  
D.G Lord ◽  
P.J Grundy

1993 ◽  
Vol 2 (2-4) ◽  
pp. 285-290 ◽  
Author(s):  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
I. Avigal ◽  
C. Uzan-Saguy ◽  
...  

2004 ◽  
Vol 263 (1-4) ◽  
pp. 143-147
Author(s):  
Lifeng Liu ◽  
Nuofu Chen ◽  
Fuqiang Zhang ◽  
Chenlong Chen ◽  
Yanli Li ◽  
...  

1998 ◽  
Vol 13 (8) ◽  
pp. 2315-2320 ◽  
Author(s):  
Y. P. Guo ◽  
K. L. Lam ◽  
K. M. Lui ◽  
R. W. M. Kwok ◽  
K. C. Hui

Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wafers. We found that graphitic films, amorphous carbon films, and oriented diamond microcrystallites could be obtained separatedly at different ion beam energies. The mechanism of the formation of the oriented diamond microcrystallites was suggested to include three components: strain release after ion bombardment, hydrogen passivation of sp3 carbon, and hydrogen etching. Such a process can be extended to the heteroepitaxial growth of diamond films.


1986 ◽  
Vol 74 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.


1995 ◽  
Vol 13 (6) ◽  
pp. 2836-2842 ◽  
Author(s):  
Y.‐W. Kim ◽  
I. Petrov ◽  
H. Ito ◽  
J. E. Greene

1999 ◽  
Vol 581 ◽  
Author(s):  
X. T. Zhou ◽  
H. Y. Peng ◽  
N. G. Shang ◽  
N. Wang ◽  
I. Bello ◽  
...  

ABSTRACTComposite nanowires with typical diameters of 30-100nm, which consisted of Si, β-SiC, amorphous carbon were converted from Si nanowires by ion beam deposition. The Si nanorods were exposed to broad low energy ion beams. The low energy hydrocarbon, argon and hydrogen ions, generated in a Kaufman ion source, reacted with Si nanowires and formed the composite nanowires. It has been assumed that the reaction pathway to form the composite nanowires were driven by both thermal diffusion and kinetic energic of interacting particles.


2000 ◽  
Vol 61 (8) ◽  
pp. 5579-5586 ◽  
Author(s):  
W. J. Zhang ◽  
X. S. Sun ◽  
H. Y. Peng ◽  
N. Wang ◽  
C. S. Lee ◽  
...  

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