Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition
Keyword(s):
Ion Beam
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AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.
1999 ◽
Vol 198-199
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pp. 731-733
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Development of a high energy large sheet ion beam system and a low energy ion beam deposition system
1994 ◽
pp. 63-68
Keyword(s):
Ion Beam
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