Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride

1999 ◽  
Vol 592 ◽  
Author(s):  
L. C. Chen ◽  
C. T. Wu ◽  
C.-Y Wen ◽  
J.-J. Wu ◽  
W. T. Liu ◽  
...  

ABSTRACTDielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.

1999 ◽  
Vol 355-356 ◽  
pp. 417-422 ◽  
Author(s):  
J.-J Wu ◽  
C.-T Wu ◽  
Y.-C Liao ◽  
T.-R Lu ◽  
L.C Chen ◽  
...  

2011 ◽  
Vol 148-149 ◽  
pp. 54-57
Author(s):  
Xiao Ping Lin ◽  
Yun Dong ◽  
Lian Wei Yang

The Al2O3 nano-films of different thicknesses (1~100nm) were successfully deposited on the monocrystalline Si surface by using ion beam sputtering deposition. The surface topography and the component of nano-films with different thickness were analyzed. The quality of the surface of nano-films was systematically studied. When the films’ thickness increase, the studies by atomic force microscope (AFM), X-ray photoelectron spectrum(XPS) show that the gathering grain continually grows up and transits from acerose cellula by two-dimensional growth to globularity by three-dimensional growth. The elements O, Al and Si were found on the surface of Al2O3 nano-films. With the thickness of the films increasing, the content of Al gradually increases and the intensity peak of Si wears off, the surface quality of the deposited films is ceaselessly improved


2007 ◽  
Vol 61 (14-15) ◽  
pp. 2855-2858 ◽  
Author(s):  
J.P. Rivière ◽  
D. Texier ◽  
J. Delafond ◽  
M. Jaouen ◽  
E.L. Mathé ◽  
...  

2010 ◽  
Vol 443 ◽  
pp. 465-468
Author(s):  
Pei Quan Guo ◽  
Shou Ren Wang ◽  
Huan Yong Cui

The study reports a new surface formation technology during manufacturing process of parallel indexing cam mechanism, ion beam sputtering deposition, in which the operation temperature can be controlled below the limitation of phases exchanging or at room temperature. Phase exchanging deformation can be avoided and the shape accuracy and dimension accuracy can be improved compared with surface quenching process. The microstructure and properties of TiAlN/AlN composite film deposited on the profile surface of cam (made of 45 steel) by ion beam sputtering deposition were discussed. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscope (TEM) analysis has been used to characterize film’s microstructure and properties. The micro-hardness and adherence grade were tested.


2021 ◽  
Vol 61 (03) ◽  
Author(s):  
Jinlin Bai ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Lishuan Wang ◽  
Xiao Yang ◽  
...  

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