Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Low Energy ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

The observation of solutions in Ni3Nb

1988 ◽  
Vol 46 ◽  
pp. 540-541
Author(s):  
Z.M. Wang ◽  
J.P. Zhang
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Phase Modulation ◽  
High Resolution Electron Microscopy ◽  
Antiphase Domain ◽  
Boundary Area ◽  
Matrix Type ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Kontorova Model

High resolution electron microscopy reveals that antiphase domain boundaries in β-Ni3Nb have a hexagonal unit cell with lattice parameters ah=aβ and ch=bβ, where aβ and bβ are of the orthogonal β matrix. (See Figure 1.) Some of these boundaries can creep “upstairs” leaving an incoherent area, as shown in region P. When the stepped boundaries meet each other, they do not lose their own character. Our consideration in this work is to estimate the influnce of the natural misfit δ{(ab-aβ)/aβ≠0}. Defining the displacement field at the boundary as a phase modulation Φ(x), following the Frenkel-Kontorova model [2], we consider the boundary area to be made up of a two unit chain, the upper portion of which can move and the lower portion of the β matrix type, assumed to be fixed. (See the schematic pattern in Figure 2(a)).

An investigation of grain boundaries in submicrometer-grained Al-Mg solid solution alloys using high-resolution electron microscopy

1996 ◽  
Vol 11 (8) ◽  
pp. 1880-1890 ◽  
Author(s):  
Zenji Horita ◽  
David J. Smith ◽  
Minoru Furukawa ◽  
Minoru Nemoto ◽  
Ruslan Z. Valiev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
High Resolution ◽  
Grain Boundaries ◽  
Boundary Migration ◽  
Boundary Energy ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Structural Features ◽  
Resolution Electron

High-resolution electron microscopy was used to examine the structural features of grain boundaries in Al–1.5% Mg and Al–3% Mg solid solution alloys produced with submicrometer grain sizes using an intense plastic straining technique. The grain boundaries were mostly curved or wavy along their length, and some portions were corrugated with regular or irregular arrangements of facets and steps. During exposure to high-energy electrons, grain boundary migration occurred to reduce the number of facets and thus to reduce the total boundary energy. The observed features demonstrate conclusively that the grain boundaries in these submicrometer-grained materials are in a high-energy nonequilibrium configuration.

scholarly journals Atomic Matching Across Internal Interfaces

1989 ◽  
Vol 153 ◽  
Author(s):  
Karl L. Merkle
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Large Fraction ◽  
High Resolution Electron Microscopy ◽  
Low Energy ◽  
Ideal Lattice ◽  
Interatomic Distances ◽  
Resolution Electron ◽  
Atomic Coordination ◽  
The Ideal

AbstractThe atomic structure of internal interfaces in dense-packed systems has been investigated by high-resolution electron microscopy (HREM). Similarities between the atomic relaxations in heterophase Interfaces and certain largeangle grain boundaries have been observed. In both types of interfaces localization of misfit leads to regions of good atomic matching within the interface separated by misfit dislocation-like defects. It appears that, whenever possible, the GB structures assume configurations in which the atomic coordination is not too much different from the ideal lattice. It is suggested that these kinds of relaxations primarily occur whenever the translational periods along the GB are large or when the interatomic distances are incommensurate. Incorporation of low index planes into the GB appears to lead to preferred, i.e. low energy structures, that can be quite dense with good atomic matching across a large fraction of the interface.

High Resolution Electron Microscopy of Sintered Ain

1982 ◽  
Vol 40 ◽  
pp. 546-547
Author(s):  
G. Van Tendeloo ◽  
G. Thomas
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
Tetrahedral Coordination ◽  
Temperature Behaviour ◽  
Resolution Electron ◽  
Suitable Form ◽  
Metal Ratio

Sialon ceramics are widely studied because of their industrial interest due to their high temperature behaviour. AIN, being one of the edge components, has obtained little attention up until now mainly because it is difficult to prepare in a suitable form; moreover, it is a very poor sintering material. Very little is known about the properties or the exact structure. Recently Komeya and Tsuge succeeded in sintering 90wt% A IN and 10wt% SiO2 at 2100°. All the known tetrahedral A IN polytypes are based on the 2H (wurtzite type) structure where A1 and N are in tetrahedral coordination. When the metal to non-metal ratio deviates from one, different polytypes are formed by creating periodic stacking faults every nth layer.

The Nature of Oxygen-Related Polytypoids in the Aluminum Nitride-Aluminum Oxide System

1993 ◽  
Vol 319 ◽  
Author(s):  
R.A. Youngman
Keyword(s):  
Oxygen Content ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
Oxide System ◽  
Extended Defects ◽  
Low Oxygen ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Related Point ◽  
Inversion Domain Boundaries

AbstractPrevious investigations into the nature of polytypoid structures in the A1N-A12O3 and A1NSiO2 systems have concluded that these structures are comprised of ordered stacking faults which accommodate oxygen (and silicon) in the basic wurtzite (2H) AIN structure. The polytypoids are distinct chemical phases intimately related to the pure 2H AIN. More recent work in low oxygen content (<6 at.%) A1N has elucidated the evolution of oxygen-related point defects, and transformation of these defects into extended structures. These studies have shown that all oxygenrelated extended defects in the A1N-A12O3 system are inversion domain boundaries (IDBs).We present here extensions of the concepts developed from low oxygen content studies which lead to direct application in understanding the polytypoid structures. High resolution electron microscopy (HREM), specific electron diffraction experiments, and structural models are utilized to prove that the polytypoid structures are not based on stacking faults, but, in fact are based on IDBs.

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