Optical Properties of MBE Grown Cubic AlGaN Epilayers and AlGaN/GaN Quantum Well Structures

2000 ◽  
Vol 639 ◽  
Author(s):  
D.J. As ◽  
T. Frey ◽  
M. Bartels ◽  
A. Khartchenko ◽  
D. Schikora ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Linear Increase ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
Al Content ◽  
Frequency Plasma ◽  
Multi Quantum Well

ABSTRACTCubic AlyGa1−yN/GaN heterostructures on GaAs(001) substrates were grown by radio-frequency plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction, spectroscopic ellipsometry and cathodoluminescence were used to characterize the structural and optical properties of the alloy epilayers. X-ray diffraction reciprocal space maps demonstrate the good crystal quality of the cubic AlyGa1−yN films. Both SE as well as room temperature CL of the AlyGa1−yN epilayer show a linear increase of the band gap with increasing Al-content. A pseudomorphically strained cubic 10 × (2.4 nm GaN/ 4.8 nm Al0.12Ga0.88N) multi-quantum well (MQW) structure has been realized. Cathodoluminescence clearly demonstrates strong radiative recombination due to quantized states in the GaN well layer at a photon energy of 3.323 eV.

Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures with Different Well Widths

2002 ◽  
Vol 722 ◽  
Author(s):  
Young-Hoon KIM ◽  
Chang-Soo KIM ◽  
Sam-Kyu NOH ◽  
Jae-Young LEEM ◽  
Kee-Young LIM ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Emission Intensity ◽  
Lattice Relaxation ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Quantum Well Structures ◽  
X Ray ◽  
Multi Quantum Well

AbstractThe structural and the optical properties of 10-period In0.15Ga0.85N/GaN multiple quantum wells (MQWs) have been investigated using HRXRD (high-resolution X-ray diffraction) and PL (photoluminescence). For the samples, the barrier thickness was kept constant, 7.5 nm and the well thicknesses were varied, 1.5, 3.0, 4.5, and 6.0 nm. For the structural characterization, an ω/2θ-scan and an ω-scan for GaN (00 2) reflection and a reciprocal space mapping (RSM) around the GaN (10 5) lattice point were employed. The average strain for the MQWs increased as the well thickness increased. The MQW with a 6.0 nm well thickness experienced lattice relaxation and the crystallinity of the sample was poor compared to that of the other samples. MQWs with well thicknesses of 1.5, 3.0 and 4.5 nm, however, maintained lattice coherency with the GaN epilayers underneath, and the critical well thickness for lattice relaxation of the MQWs used in the study was 6.0 nm. The PL spectra showed that the relative emission intensity of the sample with a 6.0 nm well thickness was lower than for the others, a fact consistent with the X-ray results. The emission intensity, therefore, is considered to be affected by defects due to lattice relaxation of the epilayer.

scholarly journals High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

1993 ◽  
Vol 84 (3) ◽  
pp. 475-489
Author(s):  
G. Bauer ◽  
E. Koppensteiner ◽  
P. Hamberger ◽  
J. Nützel ◽  
G. Abstreiter ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
Short Period ◽  
Short Period Superlattices

X-ray diffraction in quantum-well structures

1996 ◽  
Vol 221 (1-4) ◽  
pp. 487-493 ◽  
Author(s):  
E. Zolotoyabko ◽  
Y. Finkelstein ◽  
M. Blumina ◽  
D. Fekete
Keyword(s):  
Quantum Well ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

AlInN/GaN based multi quantum well structures - growth and optical properties

2009 ◽  
Vol 6 (S2) ◽  
pp. S451-S454 ◽  
Author(s):  
Christoph Hums ◽  
Aniko Gadanecz ◽  
Armin Dadgar ◽  
Jürgen Bläsing ◽  
Pierre Lorenz ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Influence of Al content in the barrier on the optical properties of GaAs/AlxGa1−xAs (x=0.1–1) multiple-quantum-well structures

1992 ◽  
Vol 46 (11) ◽  
pp. 6947-6954 ◽  
Author(s):  
Nguyen Hong Ky ◽  
J. D. Ganière ◽  
M. Gailhanou ◽  
F. Morier-Genoud ◽  
D. Martin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Al Content

Optical properties of strained InxGa1−xAs multi quantum well structures

1984 ◽  
Vol 142 (1-3) ◽  
pp. 509-512 ◽  
Author(s):  
J.-Y. Marzin ◽  
M. Quiliec ◽  
E.V.K. Rao ◽  
G. Leroux ◽  
L. Goldstein
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Quantum Well Structures ◽  
Multi Quantum Well
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