Higher efficiency of n-i-p solar cells by Hot-Wire CVD at moderate temperatures

2001 ◽  
Vol 664 ◽  
Author(s):  
Marieke K. van Veen ◽  
Ruud E.I. Schropp
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
Open Circuit ◽  
Hot Wire ◽  
Tandem Solar Cells ◽  
Back Reflectors ◽  
Absorbing Layer

ABSTRACTHot-Wire deposited amorphous silicon is an excellent material for the incorporation as the absorbing layer in n-i-p solar cells. We decreased the deposition temperature from 430 °C to 250 °C, keeping device quality (opto-)electrical properties of the a-Si:H layers. This enables application of Hot-Wire deposited a-Si:H in p-i-n structures and tandem solar cells. Layers deposited at 250 °C have been applied in efficient n-i-p and n-i-p/n-i-p solar cells. The deposition rate of the intrinsic layer was about 10 Å/s. No optical enhancements, like texturing or back reflectors, were used. Single-junction cells with a fill factor of 0.72 and an open-circuit voltage of 0.89 V have been produced. On a flexible stainless steel substrate, an initial efficiency of 7.2 % was recorded. Tandem cells also show a high fill factor (0.71) and open-circuit voltage (1.70 V), resulting in an initial efficiency of 8.5 %.

Fabrication of High Efficiency Flexible CIGS Solar Cell with ZnO Diffusion Barrier on Stainless Steel Substrate

2011 ◽  
Vol 1324 ◽  
Author(s):  
Bae Dowon ◽  
Kwon Sehan ◽  
Oh Joonjae ◽  
Lee Joowon ◽  
Kim Wookyoung
Keyword(s):  
Stainless Steel ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Diffusion Barriers ◽  
Back Contact

ABSTRACTi-ZnO layers were deposited as diffusion barriers fabricated by RF sputtering on stainless-steel substrates (SUS430, matches with AISI SUS24). It was found that the addition of ZnO layer between stainless-steel substrate and Mo back contact film deplete diffusion of metal ions from substrate and reduce recombination at CIGS layer, as identified by an SIMS depth profile, QE and C-V measurements. With such diffusion barriers, the efficiency, open-circuit voltage, short-circuit current and fill factor of CIGS solar cells all increased, compared to reference cells without diffusion barrier. For the better device performance, Na was supplied during Mo back-contact layer deposition by co-sputtering of the target, including Na-source. Efficiencies of cells were increased with increasing the quantity of Na source. Unlike barrier thickness effect, short circuit current was reduced and open circuit voltage, fill factor were increased with increasing Na-source, and achieved 12.6% efficiency without AR(anti-reflection) coating. The relationship and causality between these results and the Na-doping were analyzed using C-V measurements.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Monolithic perovskite silicon tandem solar cells with high-bandgap perovskite absorber exceeding 1.8 V open-circuit voltage

2019 ◽  
Author(s):  
Kristina M. Winkler ◽  
Ines Ketterer ◽  
Alexander J. Bett ◽  
Özde Kabakli ◽  
Martin Bivour ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Tandem Solar Cells

scholarly journals Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Rui He ◽  
Tingting Chen ◽  
Zhipeng Xuan ◽  
Tianzhen Guo ◽  
Jincheng Luo ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Tandem Solar Cells ◽  
Carrier Lifetimes

Abstract Wide-bandgap (wide-E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).

scholarly journals Ultra-low p-doping of poly(3-hexylthiophene) and its impact on polymer aggregation and photovoltaic performance

2016 ◽  
Vol 4 (1) ◽  
Author(s):  
Marcel M. Said ◽  
Yadong Zhang ◽  
Raghunath R. Dasari ◽  
Dalaver H. Anjum ◽  
Rahim Munir ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Photovoltaic Performance ◽  
Photovoltaic Cells ◽  
Open Circuit ◽  
Device Performance ◽  
Long Range Order ◽  
P3ht Film ◽  
Low Levels

AbstractPoly(3-hexylthiophene) (P3HT) films and P3HT / fullerene photovoltaic cells have been p-doped with very low levels (< 1 wt. %) of molybdenum tris[1-(trifluoromethylcarbonyl)- 2-(trifluoromethyl)-ethane-1,2-dithiolene]. The dopants are inhomogenously distributed within doped P3HT films, both laterally and as a function of depth, and appear to aggregate in some instances. Doping also results in subtle changes in the local and long range order of the P3HT film. These effects likely contribute to the complexity of the observed evolutions in conductivity, mobility and work function with doping levels. They also negatively affect the open-circuit voltage and fill factor of solar cells in unexpected ways, indicating that dopant aggregation and non-uniform distribution can harm device performance.

Perovskite-kesterite monolithic tandem solar cells with high open-circuit voltage

2014 ◽  
Vol 105 (17) ◽  
pp. 173902 ◽  
Author(s):  
Teodor Todorov ◽  
Talia Gershon ◽  
Oki Gunawan ◽  
Charles Sturdevant ◽  
Supratik Guha
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Tandem Solar Cells

A high efficiency solution processed polymer inverted triple-junction solar cell exhibiting a power conversion efficiency of 11.83%

2015 ◽  
Vol 8 (1) ◽  
pp. 303-316 ◽  
Author(s):  
Abd. Rashid bin Mohd Yusoff ◽  
Dongcheon Kim ◽  
Hyeong Pil Kim ◽  
Fabio Kurt Shneider ◽  
Wilson Jose da Silva ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Triple Junction ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Power Conversion ◽  
Open Circuit ◽  
Tandem Solar Cells

We propose that 1 + 1 + 1 triple-junction solar cells can provide an increased efficiency, as well as a higher open circuit voltage, compared to tandem solar cells.

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