Shape of piezoelectric hysteresis loop for non-ferroelastic switching

2003 ◽  
Vol 784 ◽  
Author(s):  
A. K. Tagantsev ◽  
P. Muralt ◽  
J. Fousek
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hysteresis Loop ◽  
Single Crystals ◽  
Applied Electric Field ◽  
Piezoelectric Coefficient ◽  
Hysteresis Loops ◽  
Simple Theory ◽  
The Difference

ABSTRACTA simple theory for the shape of the piezoelectric hysteresis loops (piezoelectric coefficient d vs. applied electric field E) is developed for the case of non-ferroelelastic 180° switching in ferroelectrics. The theory provides explanations for specific features of piezoelectric hysteresis loops, which have been observed in single crystals, thin films and in ceramics in particular. The piezoelectric coefficient may show a “hump”, i.e. when E decreases from the tip of the loop down to zero, d passes through a maximum, and a “nose”, i.e. a self-crossing of the loop close to its tips. The theory also explains the difference in the coercive fields seen in the polarization and piezoelectric loops.

A polycrystal hysteresis model for ferroelectric ceramics

2006 ◽  
Vol 462 (2069) ◽  
pp. 1573-1592 ◽  
Author(s):  
Y Su ◽  
G.J Weng
Keyword(s):  
Electric Field ◽  
Hysteresis Loop ◽  
Ferroelectric Properties ◽  
Electric Displacement ◽  
Hysteresis Loops ◽  
Ferroelectric Ceramics ◽  
Domain Growth ◽  
Thermodynamic Approach ◽  
Hysteresis Model ◽  
Self Consistent

Most key elements of ferroelectric properties are defined through the hysteresis loops. For a ferroelectric ceramic, its loop is contributed collectively by its constituent grains, each having its own hysteresis loop when the ceramic polycrystal is under a cyclic electric field. In this paper, we propose a polycrystal hysteresis model so that the hysteresis loop of a ceramic can be calculated from the loops of its constituent grains. In this model a micromechanics-based thermodynamic approach is developed to determine the hysteresis behaviour of the constituent grains, and a self-consistent scheme is introduced to translate these behaviours to the polycrystal level. This theory differs from the classical phenomenological ones in that it is a micromechanics-based thermodynamic approach and it can provide the evolution of new domain concentration among the constituent grains. It also differs from some recent micromechanics studies in its secant form of self-consistent formulation and in its application of irreversible thermodynamics to derive the kinetic equation of domain growth. To put this two-level micromechanics theory in perspective, it is applied to a ceramic PLZT 8/65/35, to calculate its hysteresis loop between the electric displacement and the electric field ( D versus E ), and the butterfly-shaped longitudinal strain versus the electric field relation ( ϵ versus E ). The calculated results are found to be in good quantitative agreement with the test data. The corresponding evolution of new domain concentration c 1 and the individual hysteresis loops of several selected grains—along with those of the overall polycrystal—are also illustrated.

Temperature-electric field hysteresis loop of multicaloric effects in PbZr0.8Ti0.2O3 thin films

2019 ◽  
Vol 383 (24) ◽  
pp. 2933-2937 ◽  
Author(s):  
F. Wang ◽  
T. Liu ◽  
C.L. Xie ◽  
Y. Liu ◽  
N.S. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hysteresis Loop

Comparison between Ferromagnetic and Ferroelectric Optical Switch Devices in Terms of the Response to the Electric Field

2018 ◽  
Vol 23 ◽  
pp. 1-7
Author(s):  
Rabi Noori Hammudi ◽  
Sudad Salman Al-Bassam ◽  
Rawa Khalil Ibrahim ◽  
Aseel Ibrahim Mahmood ◽  
Peter Kopčanský ◽  
...  
Keyword(s):  
Magnetic Material ◽  
Electric Field ◽  
Response Time ◽  
Applied Electric Field ◽  
Optical Switch ◽  
Ferroelectric Material ◽  
Optical Effect ◽  
Constituent Material ◽  
Electro Optic ◽  
The Difference

In this work we have studied the electro-optical effect of two types of ferronematic nanoparticles. The first sample doped with magnetic material Fe3O4 and the second sample doped with a ferroelectric material SbSI. The difference in the two types of material that has been vaccinated led to different values of electro-optic properties because of the different susceptibility of materials. We have noticed that the material SbSI was more responsive to the applied electric field due to the nature of the constituent material (electric material) than the Fe3O4 ferromagnetic. The response time for the material SbSI is less than the response time of the ferromagnetic Fe3O4, that led to make the material SbSI best in the optical switch applications.

Influence of applied electric field annealing on the microwave properties of (Ba0.5Sr0.5)TiO3 thin films

2007 ◽  
Vol 90 (16) ◽  
pp. 162905 ◽  
Author(s):  
Kwang-Hwan Cho ◽  
Chil-Hyoung Lee ◽  
Chong-Yun Kang ◽  
Seok-Jin Yoon ◽  
Young-Pak Lee
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Applied Electric Field ◽  
Microwave Properties ◽  
Field Annealing

scholarly journals Электрически активные состояния захвата и переноса заряда, обусловливающие медленную рекомбинацию в кристаллах бромида таллия при низких температурах

2018 ◽  
Vol 52 (2) ◽  
pp. 171
Author(s):  
В. Кажукаускас ◽  
Р. Гарбачаускас ◽  
С. Савицки
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Single Crystals ◽  
Applied Electric Field ◽  
Thermal Activation ◽  
Thermal Quenching ◽  
Activation Energies ◽  
Trap States ◽  
Optical Generation ◽  
Stockbarger Method

AbstractTlBr single crystals grown by the Bridgman–Stockbarger method are studied. It is established that frozen-conductivity effects manifest themselves under interband excitation by light at temperatures below 200 K. Herewith, clearly pronounced superlinear dependences of the induced photoconductivity on the strength of the applied electric field manifest themselves. The results of studying thermally stimulated conductivity evidence that these phenomena can be associated with the filling of trap states with thermal activation energies of 0.08–0.12 eV. This state can be removed due to thermal quenching at temperatures of ≳180 K because of the emptying of energy states with an activation energy of 0.63–0.65 eV filled after optical generation.

High-Performance Piezoelectric Crystals, Ceramics, and Films

2018 ◽  
Vol 48 (1) ◽  
pp. 191-217 ◽  
Author(s):  
Susan Trolier-McKinstry ◽  
Shujun Zhang ◽  
Andrew J. Bell ◽  
Xiaoli Tan
Keyword(s):  
Thin Films ◽  
Small Molecules ◽  
Single Crystals ◽  
Applied Electric Field ◽  
High Performance ◽  
Piezoelectric Effect ◽  
Piezoelectric Materials ◽  
Inorganic Materials ◽  
Piezoelectric Response ◽  
Piezoelectric Crystals

Piezoelectric materials convert between electrical and mechanical energies such that an applied stress induces a polarization and an applied electric field induces a strain. This review describes the fundamental mechanisms governing the piezoelectric response in high-performance piezoelectric single crystals, ceramics, and thin films. While there are a number of useful piezoelectric small molecules and polymers, the article focuses on inorganic materials displaying the piezoelectric effect. Piezoelectricity is first defined, and the mechanisms that contribute are discussed in terms of the key crystal structures for materials with large piezoelectric coefficients. Exemplar systems are then discussed and compared for the cases of single crystals, bulk ceramics, and thin films.

Properties of Amorphous and Crystalline Ta2O5 Thin Films Prepared by Metalorganic Solution Deposition Technique for Integrated Electronic Devices

2000 ◽  
Vol 623 ◽  
Author(s):  
P.C. Joshi ◽  
M.W. Cole
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electric Field ◽  
Applied Electric Field ◽  
Annealing Temperature ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Temperature Range ◽  
Si Substrates ◽  
Bias Stability

AbstractWe report on the properties of Ta2O5 thin films prepared by the metalorganic solution deposition (MOSD) technique on Pt-coated Si, n+-Si, and poly-Si substrates. The effects of postdeposition annealing temperature on the structural, electrical, and optical properties were analyzed. The electrical measurements were conducted on MIM and MIS capacitors. The dielectric constant of amorphous Ta2O5 thin films was in the range 29.2-29.5 up to 600°C, while crystalline thin films, annealed in the temperature range 650–750°C, exhibited enhanced dielectric constant in the range 45.6–51.7. The dielectric loss factor did not show any appreciable dependence on the annealing temperature and was in the range 0.006–0.009. The films exhibited high resistivities of the order of 1012–1015 Δ-cm at an applied electric field of 1 MV/cm in the annealing temperature range of 500-750 °C. The temperature coefficient of capacitance was in the range 52-114 ppm/°C for films annealed in the temperature range 500-750°C. The bias stability of capacitance, measured at an applied electric field of 1 MV/cm, was better than 1.41 % for Ta2O5 films annealed up to 750°C.

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