Using Hyperfine Interaction for the Structural Characterization of Amorphous Silicon

1986 ◽  
Vol 69 ◽  
Author(s):  
Martin Stutzmann ◽  
David K. Biegelsen

AbstractThe hyperfine interaction between electronic and nuclear spins in hydrogenated amorphous silicon has been observed for the various paramagnetic defects in this material by electron spin resonance (ESR) and electron nuclear double resonance (ENDOR). The large hyperfine interaction between dangling bonds and 29Si as well as between donor electrons and 31p or 75 As nuclei can be resolved in ESR and provides direct information about the structure of the underlying electronic states. The smaller dipolar coupling of all paramagnetic states to more distant nuclei leads to an ENDOR response near the free nuclear resonance frequencies, which can be used to study the coupling of the electronic and nuclear spin system to the lattice phonons and to each other.

Author(s):  
F. K. Koschnick ◽  
K. Michael ◽  
J.-M. Spaeth ◽  
B. Beaumont ◽  
Pierre Gibart

Optically detected electron nuclear double resonance (ODENDOR) was measured in the 2.2 eV ‘yellow’ luminescence band associated with the residual donor in n-type undoped GaN. The ODENDOR lines are due to gallium and show a quadrupole splitting which can be described with an axial tensor. The quadrupole parameter was estimated to be q(69Ga) = 1/2 Qzz = 0.22 MHz. A hyperfine interaction for 69Ga of about 0.3 MHz for the isotropic and of about 0.15 MHz for the anisotropic part was estimated from the width of the ODENDOR lines. It is tentatively suggested that a Ga interstitial is the residual donor.


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