High Cooling Power Density of SiGe/Si Superlattice Microcoolers

2001 ◽  
Vol 691 ◽  
Author(s):  
Gehong Zeng ◽  
Xiaofeng Fan ◽  
Chris LaBounty ◽  
John E. Bowers ◽  
Edward Croke ◽  
...  
Keyword(s):  
Thin Film ◽  
Power Density ◽  
Room Temperature ◽  
Density Measurement ◽  
Thermionic Emission ◽  
Cooling Power ◽  
Thin Film Resistors ◽  
Fabrication And Characterization ◽  
Superlattice Structures

ABSTRACTFabrication and characterization of SiGe/Si superlattice microcoolers integrated with thin film resistors are described. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity, and by providing selective emission of hot carriers through thermionic emission. Thin film metal resistors were integrated on top of the cooler devices and they were used as heat load for cooling power density measurement. Various device sizes were characterized. Net cooling over 4.1 K and a cooling power density of 598 W/cm2 for 40 × 40 μm2 devices were measured at room temperature.

Cooling Power Density of SiGe/Si Superlattice Micro Refrigerators

2003 ◽  
Vol 793 ◽  
Author(s):  
Gehong Zeng ◽  
Xiaofeng Fan ◽  
Chris LaBounty ◽  
Edward Croke ◽  
Yan Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Power Density ◽  
Heat Load ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Cooling Power ◽  
Device Performance ◽  
Hot Carriers ◽  
Superlattice Structures ◽  
Load Conditions

ABSTRACTExperiments were carried out to determine the cooling power density of SiGe/Si superlattice microcoolers by integrating thin film metal resistor heaters on the cooling surface. By evaluating the maximum cooling of the device under different heat load conditions, the cooling power density was directly measured. Both micro thermocouple probes and the resistance of thin film heaters were used to get an accurate measurement of temperature on top of the device. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity, and by providing selective emission of hot carriers through thermionic emission. Various device sizes were characterized. The maximum cooling and the cooling power density had different dependences on the micro refrigerator size. Net cooling over 4.1 K below ambient and cooling power density of 598 W/cm2 for 40 × 40 μm2 devices were measured at room temperature.

Modeling, Fabrication and Characterization of Piezoelectric ZnO-Based Micro-Sensors and Micro-Actuators

2013 ◽  
Vol 444-445 ◽  
pp. 1636-1643 ◽  
Author(s):  
Yan Hui Yuan ◽  
He Jun Du ◽  
Xin Xia ◽  
Yoke Rung Wong
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Laser Doppler Vibrometer ◽  
Zno Thin Film ◽  
Design Specifications ◽  
Piezoelectric Cantilever ◽  
Fabrication And Characterization ◽  
Micro Cantilever ◽  
Microfabrication Techniques

In this study, capabilities of zinc oxide (ZnO) thin films in sensing and actuating were investigated using micromachined micro-cantilevers. A heterogeneous piezoelectric cantilever was modeled to study its response under voltage and/or external mechanical loading. A ZnO thin-film micro-cantilever was designed based on the developed theoretical model. Simulated tip deflections of the micro-cantilever were on the nanometer level under typical electrical and mechanical input. A prototype was fabricated with microfabrication techniques. The ZnO thin film was sputtered at room temperature and demonstrated good compatibility with common chemicals and processes in micromachining. The fabricated micro-cantilever was experimentally characterized for its actuating and sensing performance. For actuator characterization tip deflection of the micro-cantilever was detected by a laser Doppler vibrometer, while for sensor characterization the micro-cantilever was calibrated as an acceleration sensor using a reference accelerometer. The experimental resonant frequency, actuating and sensing sensitivities agreed well the design specifications.

Fabrication and Characterization of Sensitive Room Temperature NO 2 Gas Sensor Based on ZnSnO 3 Thin Film

2019 ◽  
Vol 216 (16) ◽  
pp. 1900205 ◽  
Author(s):  
Samar Dabbabi ◽  
Tarek Ben Nasr ◽  
Ali Madouri ◽  
Antonella Cavanna ◽  
Antonio Garcia‐Loureiro ◽  
...  
Keyword(s):  
Thin Film ◽  
Gas Sensor ◽  
Room Temperature ◽  
Fabrication And Characterization

P-type SiGe/Si Superlattice Cooler

2000 ◽  
Vol 626 ◽  
Author(s):  
Xiaofeng Fan ◽  
Gehong Zeng ◽  
Edward Croke ◽  
Gerry Robinson ◽  
Chris LaBounty ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermionic Emission ◽  
Single Element ◽  
Device Performance ◽  
Hot Carriers ◽  
Strained Si ◽  
Fabrication And Characterization ◽  
Superlattice Structures ◽  
P Type

ABSTRACTThe fabrication and characterization of single element p-type SiGe/Si superlattice coolers are described. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity between the hot and the cold junctions, and by providing selective emission of hot carriers through thermionic emission. The structure of the samples consisted of a 3 μm thick symmetrically strained Si0.7Ge0.3/Si superlattice grown on a buffer layer designed so that the in-plane lattice constant is approximately that of relaxed Si0.9Ge0.1. Cooling up to 2.7 K at 25 °C and 7.2 K at 150 °C were measured. These p-type coolers can be combined with n-type devices that were demonstrated in our previous work. This is similar to conventional multi element thermoelectric devices, and it will enable us to achieve large cooling capacities with relatively small currents.

Sign in / Sign up

Export Citation Format

Share Document