Modeling, Fabrication and Characterization of Piezoelectric ZnO-Based Micro-Sensors and Micro-Actuators

2013 ◽  
Vol 444-445 ◽  
pp. 1636-1643 ◽  
Author(s):  
Yan Hui Yuan ◽  
He Jun Du ◽  
Xin Xia ◽  
Yoke Rung Wong

In this study, capabilities of zinc oxide (ZnO) thin films in sensing and actuating were investigated using micromachined micro-cantilevers. A heterogeneous piezoelectric cantilever was modeled to study its response under voltage and/or external mechanical loading. A ZnO thin-film micro-cantilever was designed based on the developed theoretical model. Simulated tip deflections of the micro-cantilever were on the nanometer level under typical electrical and mechanical input. A prototype was fabricated with microfabrication techniques. The ZnO thin film was sputtered at room temperature and demonstrated good compatibility with common chemicals and processes in micromachining. The fabricated micro-cantilever was experimentally characterized for its actuating and sensing performance. For actuator characterization tip deflection of the micro-cantilever was detected by a laser Doppler vibrometer, while for sensor characterization the micro-cantilever was calibrated as an acceleration sensor using a reference accelerometer. The experimental resonant frequency, actuating and sensing sensitivities agreed well the design specifications.

2012 ◽  
Vol 486 ◽  
pp. 23-26
Author(s):  
Yan Hui Yuan ◽  
He Jun Du ◽  
Pei Hong Wang

A micro silicon cantilever actuated by ZnO thin film was designed, fabricated and characterized. The ZnO thin film was deposited by RF sputtering at room temperature. The transverse piezoelectric constant d31 was found to be-4.66 pC/N. Time and frequency responses of the cantilever actuator were investigated by means of a laser Doppler vibrometer. The actuator has a sensitivity of 12 nm/V at 15 kHz. Its 1st bending resonance was observed at 53 kHz. The bandwidth was found to be 27 kHz with damping of 0.35%. The cantilever demonstrated capability of high frequency actuation on a nanometer level.


2001 ◽  
Vol 691 ◽  
Author(s):  
Gehong Zeng ◽  
Xiaofeng Fan ◽  
Chris LaBounty ◽  
John E. Bowers ◽  
Edward Croke ◽  
...  

ABSTRACTFabrication and characterization of SiGe/Si superlattice microcoolers integrated with thin film resistors are described. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity, and by providing selective emission of hot carriers through thermionic emission. Thin film metal resistors were integrated on top of the cooler devices and they were used as heat load for cooling power density measurement. Various device sizes were characterized. Net cooling over 4.1 K and a cooling power density of 598 W/cm2 for 40 × 40 μm2 devices were measured at room temperature.


2012 ◽  
Vol 48 (93) ◽  
pp. 11449 ◽  
Author(s):  
Dongping Zhan ◽  
Dezhi Yang ◽  
Yiliang Zhu ◽  
Xueru Wu ◽  
Zhong-Qun Tian

2019 ◽  
Vol 216 (16) ◽  
pp. 1900205 ◽  
Author(s):  
Samar Dabbabi ◽  
Tarek Ben Nasr ◽  
Ali Madouri ◽  
Antonella Cavanna ◽  
Antonio Garcia‐Loureiro ◽  
...  

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