Quaternary AlInGaN MQWs for Ultraviolet LEDs

2001 ◽  
Vol 693 ◽  
Author(s):  
J. P. Zhang ◽  
J. W. Yang ◽  
V. Adivarahan ◽  
H. M. Wang ◽  
Q. Fareed ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Atomic Layer ◽  
Optical Quality ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Force Microscopy ◽  
Peak Emission Wavelength ◽  
Pulsed Atomic Layer Epitaxy ◽  
20 Nm

AbstractWe report a pulsed atomic layer epitaxy (PALE) growth technique for quaternary AlInGaN films for ultraviolet optoelectronic applications. Using the PALE approach high quality quaternary AlInGaN/AlInGaN multiple quantum wells (MQWs) were successfully grown over sapphire substrates. From X-ray diffraction, atomic force microscopy, and photoluminescence study, a high structural and optical quality was established for the AlInGaN MQWs. Incorporating the PALE grown quaternary MQWs as the active layer of light emitting diode (LED) on sapphire or SiC substrates we also demonstrated room temperature deep ultraviolet electroluminescence under dc and pulsed electrical pumping. The peak emission wavelength can be tuned from 305 nm to 340 nm with spectrum FWHM of about 20 nm by varying the alloy compositions of the quaternary AlInGaN active layers using PALE. Comparative study of LEDs over sapphire and SiC substrates was also done in order to determine the influence of epilayer design on the performance parameters and the role of the substrate absorption.

Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures

2010 ◽  
Vol 25 (6) ◽  
pp. 1037-1040 ◽  
Author(s):  
Weihuang Yang ◽  
Shuping Li ◽  
Hangyang Chen ◽  
Dayi Liu ◽  
Junyong Kang
Keyword(s):  
Quantum Wells ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Force Microscopy ◽  
Uv Led ◽  
Hole Blocking Layer ◽  
To Come ◽  
P Type

The AlGaN-based ultraviolet (UV) light-emitting diode (LED) structures with AlN as buffer were grown on sapphire substrate by metalorganic vapor-phase epitaxy (MOVPE). A series of cathodoluminescence (CL) spectra were measured from the cross section of the UV-LED structure using point-by-point sampling to investigate the origins of the broad parasitic emissions between 300 and 400 nm, and they were found to come from the n-type AlGaN and AlN layers rather than p-type AlGaN. The parasitic emissions were effectively suppressed by adding an n-type AlN as the hole-blocking layer. Electroluminescence (EL) and atomic force microscopy (AFM) measurements have revealed that the interface abruptness and crystalline quality of the UV-LED structure are essential for the achievement of the EL emissions from the multiple quantum wells (MQWs).

STRAIN ENERGY BAND ENGINEERING APPROACH TO AlN/GaN/InN HETEROJUNCTION DEVICES

2002 ◽  
Vol 12 (02) ◽  
pp. 401-419
Author(s):  
ASIF KHAN ◽  
J. W. YANG ◽  
G. SIMIN ◽  
R. GASKA ◽  
M. S. SHUR
Keyword(s):  
Quantum Wells ◽  
Energy Band ◽  
Atomic Layer ◽  
Optical Quality ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Band Engineering ◽  
Engineering Approach ◽  
Improved Performance ◽  
Pulsed Atomic Layer Epitaxy

Our new Strain and Energy Band Engineering approach allows us to control, modulate or eliminate the strain thereby significantly enhancing the performance of electronic and optoelectronic devices on SiC and sapphire substrates using a new-pulsed atomic layer epitaxy procedure. New types of high power high temperature transistors with improved performance were fabricated XRD, PL and AFM spectra are used to establish a high structural and optical quality of die quaternary multiple quantum wells. We have also demonstrated the use of PALE deposited quaternary AlInGaN multiple quantum wells in the active region of a UV LED with emission ranging from 305 nm to 304 nm.

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

Multi-Wavelength Emitting InGaN/GaN Quantum Well Grown on V-Shaped GaN(1101) Microfacet

2007 ◽  
Vol 7 (11) ◽  
pp. 4053-4056 ◽  
Author(s):  
Eun-Sil Kang ◽  
Jin-Woo Ju ◽  
Jin Soo Kim ◽  
Haeng-Keun Ahn ◽  
June Key Lee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Multiple Quantum ◽  
Continuous Change ◽  
Light Emitting ◽  
Transmission Electron ◽  
Luminescence Peak ◽  
Multi Wavelength ◽  
Upward Direction ◽  
Conventional Photolithography

InGaN/GaN multiple quantum wells (MQWs) were successfully grown on the inclined GaN(1101) microfacets. Conventional photolithography and subsequent growth of GaN were employed to generate the V-shaped microfacets along 〈1120〉 direction. The well-developed microfacets observed by scanning electron microscopy and the clear transmission electron microscope interfacial images indicated that the MQW was successfully grown on the GaN microfacets. Interestingly, cathodoluminescence (CL) spectra measured on the microfacets showed a continuous change in the luminescence peak positions. The CL peaks were shifted to a longer wavelength from 420 nm to 440 nm as the probing points were changed along upward direction. This could be attributed to the non-uniform distribution of the In composition and/or the wavefunction overlapping between adjacent wells. Present works thus propose a novel route to fabricate a monolithic white light emitting diode without phosphors by growing the InGaN/GaN MQWs on (1101) facet.

First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode onm-Plane Sapphire with AlGaN Multiple Quantum Wells

2010 ◽  
Vol 49 (4) ◽  
pp. 040206 ◽  
Author(s):  
Krishnan Balakrishnan ◽  
Vinod Adivarahan ◽  
Qhalid Fareed ◽  
Mohamed Lachab ◽  
Bin Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Deep Ultraviolet

P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2489-2492 ◽  
Author(s):  
Chih-Hsin Ko ◽  
Yan-Kuin Su ◽  
Shoou-Jinn Chang ◽  
Ta-Ming Kuan ◽  
Chung-I Chiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Diode Structure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Organic Vapor ◽  
Metal Organic

Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells

2008 ◽  
Vol 92 (9) ◽  
pp. 091110 ◽  
Author(s):  
Il-Kyu Park ◽  
Ja-Yeon Kim ◽  
Min-Ki Kwon ◽  
Chu-Young Cho ◽  
Jae-Hong Lim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
White Light ◽  
Light Emitting Diode ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting
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