Scanning Tunneling Microscopy Observation Of Single Dangling Bonds on the Si(100)2×1:H Surface
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AbstractThe electrical properties of single dangling bonds on the Si(100)2×1:H surface are investigated by ultra high vacuum scanning tunneling microscopy. On the N-type Si(100)2×1:H surface, single dangling bonds created by feedback controlled lithography and natural dangling bonds have a fixed negative charge. On the other hand, they are observed as neutral on the P-type Si(100)2×1:H surface. Current image tunneling spectroscopy is used to characterize both types of dangling bonds. The dangling bonds with fixed negative charge display a dramatic voltage dependence with Friedel oscillations observed in the empty state images. The neutral dangling bonds appear as protrusions in both the empty and filled state images.
2005 ◽
Vol 102
(25)
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pp. 8838-8843
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2005 ◽
Vol 109
(23)
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pp. 11424-11426
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1997 ◽
Vol 94-95
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pp. 403-408
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2000 ◽
Vol 9
(3-6)
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pp. 1096-1099
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