Silicon Transport in Lateral Silicide Growth of CrSi2

1986 ◽  
Vol 71 ◽  
Author(s):  
L. R. Zheng ◽  
L. R. Doolittle ◽  
J. W. Mayer
Keyword(s):  
Growth Kinetics ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Impurity Segregation ◽  
Silicide Growth ◽  
Device Geometry ◽  
Metal Layers ◽  
Kinetics Of ◽  
Influence Of Impurities

AbstractSilicide formation and growth are studied in three geometries: conventional planar thin films, lateral diffusion couples formed by depositing metal layers on Si islands, and device geometry couples formed by depositing metal on oxide-patterned Si substrates. The influence of impurities is studied by implanting arsenic and krypton into conventional and device geometry structures.Here we present growth kinetics of CrSi2 where the presence of impurities has a strong influence. Si transport dominates in disilicide formation and leads to erosion of contacts around the periphery of oxide windows. Implantation of arsenic suppresses CrSi 2 formation; with krypton implantation, the growth kinetics shifts from linear to square-root in character. We attribute these results to impurity segregation at interfaces or grain boundaries.

Lateral Silicide Growth

1983 ◽  
Vol 25 ◽  
Author(s):  
L. R. Zheng ◽  
E. Zingu ◽  
J. W. Mayer
Keyword(s):  
Activation Energy ◽  
Low Temperatures ◽  
Lateral Diffusion ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Metal Silicides ◽  
Silicide Growth ◽  
Si Films

ABSTRACTSilicide formation and growth kinetics have been investigated with lateral diffusion couples formed by deposition of Ni and Cr layers on patterned Si substrates and by deposition of Ni patterns on Si films. For annealing temperatures between 520 and 650°C the growth of CrSi2follows a (time)½ dependence with an activation energy of 1.4± 0.1 eV. In Ni-silicide formation at temperatures below 600°C, Ni was the predominant moving species. As the temperature increased, the motion of Si became significant. The apparent activation energy for silicide formation varied from Ea ≅ 1.4 eV for Ni motion at relatively low temperatures to Ea≅ 2.3 eV for Si motion that occurs at high temperatures. Lateral diffusion in device geometry structures resulted in degradation of contact planarity due to the penetration of metal silicides in Ni-Si structures or the erosion of silicon in Cr-Si structures.

Microstructural Characterization and Growth Kinetics of the Reaction Layer in U-10wt% Zr/Zircaloy-4 Diffusion Couples

2018 ◽  
Vol 47 (9) ◽  
pp. 2675-2681
Author(s):  
Zhang Yuting ◽  
Wang Xin ◽  
Liu Pengchuang ◽  
Zeng Gang ◽  
Pang Xiaoxuan ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Reaction Layer ◽  
Microstructural Characterization ◽  
Diffusion Couples ◽  
Kinetics Of

Formation and growth kinetics of intermediate phases in Ni-Al diffusion couples

2009 ◽  
Vol 24 (5) ◽  
pp. 787-790 ◽  
Author(s):  
Xiao Ren ◽  
Guoqing Chen ◽  
Wenlong Zhou ◽  
Chengwei Wu ◽  
Junshan Zhang
Keyword(s):  
Growth Kinetics ◽  
Diffusion Couples ◽  
Intermediate Phases ◽  
Kinetics Of

Growth kinetics of phases in solid-state diffusion couples

1995 ◽  
Vol 152 (2) ◽  
pp. 385-392 ◽  
Author(s):  
V. H. Garcia ◽  
C. Scherer ◽  
P. M. Mors
Keyword(s):  
Solid State ◽  
Growth Kinetics ◽  
Solid State Diffusion ◽  
Diffusion Couples ◽  
State Diffusion ◽  
Kinetics Of

Phase Formation and Kinetic Processes in Silicide Growth.

1983 ◽  
Vol 25 ◽  
Author(s):  
G. Ottaviani
Keyword(s):  
Boundary Conditions ◽  
Phase Formation ◽  
Growth Kinetics ◽  
Metal Layer ◽  
Silicide Phase ◽  
Reaction Products ◽  
Silicon Structures ◽  
Silicide Growth ◽  
Kinetic Processes ◽  
Kinetics Of

ABSTRACTTwenty years of research have now been devoted to investigating reaction products obtained by annealing metal-layer/silicon structures. A wide variety of cases have been analyzsed and a considerable amount of data has been produced. Despite the vast amount of information available, several aspects concerning phase formation and kinetic processes are not yet well established. The purpose of this paper is to investigate the mechanisms of phase formation and to show the importance of kinetic factors in the appearance of various compounds. Results will be shown for a single metal layer deposited on silicon, for bilayers. and for alloys. Depending upon the starting structure, metal-rich or silicon-rich silicides can be formed. Moreover, by modifying the boundary conditions, it is possible to change the growth kinetics of the silicide phase that forms.

Composition and Growth Kinetics of the Interfacial Layer for MOCVD HfO[sub 2] Layers on Si Substrates

2004 ◽  
Vol 151 (4) ◽  
pp. F77 ◽  
Author(s):  
S. Van Elshocht ◽  
M. Caymax ◽  
S. De Gendt ◽  
T. Conard ◽  
J. Pétry ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Interfacial Layer ◽  
Si Substrates ◽  
Kinetics Of
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