Microstructural Characterization and Growth Kinetics of the Reaction Layer in U-10wt% Zr/Zircaloy-4 Diffusion Couples

2018 ◽  
Vol 47 (9) ◽  
pp. 2675-2681
Author(s):  
Zhang Yuting ◽  
Wang Xin ◽  
Liu Pengchuang ◽  
Zeng Gang ◽  
Pang Xiaoxuan ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Reaction Layer ◽  
Microstructural Characterization ◽  
Diffusion Couples ◽  
Kinetics Of

Silicon Transport in Lateral Silicide Growth of CrSi2

1986 ◽  
Vol 71 ◽  
Author(s):  
L. R. Zheng ◽  
L. R. Doolittle ◽  
J. W. Mayer
Keyword(s):  
Growth Kinetics ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Impurity Segregation ◽  
Silicide Growth ◽  
Device Geometry ◽  
Metal Layers ◽  
Kinetics Of ◽  
Influence Of Impurities

AbstractSilicide formation and growth are studied in three geometries: conventional planar thin films, lateral diffusion couples formed by depositing metal layers on Si islands, and device geometry couples formed by depositing metal on oxide-patterned Si substrates. The influence of impurities is studied by implanting arsenic and krypton into conventional and device geometry structures.Here we present growth kinetics of CrSi2 where the presence of impurities has a strong influence. Si transport dominates in disilicide formation and leads to erosion of contacts around the periphery of oxide windows. Implantation of arsenic suppresses CrSi 2 formation; with krypton implantation, the growth kinetics shifts from linear to square-root in character. We attribute these results to impurity segregation at interfaces or grain boundaries.

Formation and growth kinetics of intermediate phases in Ni-Al diffusion couples

2009 ◽  
Vol 24 (5) ◽  
pp. 787-790 ◽  
Author(s):  
Xiao Ren ◽  
Guoqing Chen ◽  
Wenlong Zhou ◽  
Chengwei Wu ◽  
Junshan Zhang
Keyword(s):  
Growth Kinetics ◽  
Diffusion Couples ◽  
Intermediate Phases ◽  
Kinetics Of

Growth kinetics of phases in solid-state diffusion couples

1995 ◽  
Vol 152 (2) ◽  
pp. 385-392 ◽  
Author(s):  
V. H. Garcia ◽  
C. Scherer ◽  
P. M. Mors
Keyword(s):  
Solid State ◽  
Growth Kinetics ◽  
Solid State Diffusion ◽  
Diffusion Couples ◽  
State Diffusion ◽  
Kinetics Of

Co Anomalous Growth Kinetics of the CoSi Reaction Layer in a Si/System

2008 ◽  
pp. 99-104
Author(s):  
C. Cserháti ◽  
Gy. Glodán ◽  
A. Csik ◽  
G.A. Langer ◽  
Z. Erdélyi ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Reaction Layer ◽  
Kinetics Of ◽  
Anomalous Growth

GROWTH KINETICS OF Cu(Al) SOLID SOLUTION IN Al/Cu DIFFUSION COUPLES

2004 ◽  
Vol 11 (03) ◽  
pp. 337-340 ◽  
Author(s):  
E. B. HANNECH ◽  
N. LAMOUDI ◽  
A. GASMI
Keyword(s):  
Solid Solution ◽  
Growth Kinetics ◽  
Early Stage ◽  
Pure Aluminum ◽  
Layer Growth ◽  
Solid Solution Phase ◽  
Diffusion Couples ◽  
Phase Layer ◽  
Initial Stage ◽  
Kinetics Of

The growth kinetics of the solid solution phase of aluminum in copper in diffusion couples of pure aluminum and copper has been investigated at 425°C using a scanning electron microscope. In the initial stage, the phase layer growth was found to obey the parabolic law, indicating that the rate-controlling process is diffusion. At longer times, the growth rate deviates from the kt-1/2 behavior of the early stage.

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