Comparison of Electromigration Induced Resistance Changes in Multilayer Al-Si/Ti and Al-Si/Ta Interconnects

1986 ◽  
Vol 71 ◽  
Author(s):  
M. Finetti ◽  
I. Suni ◽  
G. Desanti ◽  
L. Bacci ◽  
C. Caprile
Keyword(s):  
Induced Resistance ◽  
Single Layer ◽  
Multilayer Structures ◽  
Resistance Analysis ◽  
Temperature Ramp

AbstractWe have applied a temperature-ramp resistance analysis to investigate electromigration effects in unpassivated Al-Si/Ta multilayer structures. The results are compared to the behaviour previously observed in Al-Si/Ti interconnects. For comparison, single layer Al-Si metallizations were also studied.

Electromigration Resistance of Multilayer Aluminum/Titanium Interconnects

1985 ◽  
Vol 54 ◽  
Author(s):  
M. Finetti ◽  
H. Ronkainen ◽  
M. Blomberg ◽  
I. Suni
Keyword(s):  
Kinetic Parameters ◽  
Wafer Level ◽  
Resistance Analysis ◽  
Temperature Ramp ◽  
Si Films

ABSTRACTWe have investigated the electromigration resistance of Al-Si/Ti multilayer interconnects. For comparison Al-Si and Al-Si/Ti/Al-Si films were also prepared. The linewidths ranged between 1.6 and 5, um. A temperature-ramp resistance analysis was applied at direct wafer level, to detect electrically transport of material and derive the electromigration kinetic parameters in test vehicles with different geometries.

Micro Via-Hole Punching of LTCC-PET Double Layer Sheets

2006 ◽  
Vol 326-328 ◽  
pp. 509-512
Author(s):  
Sung Han Rhim ◽  
Seung Wook Baek ◽  
Soo Ik Oh
Keyword(s):  
Double Layer ◽  
Ceramic Composite ◽  
Tape Casting ◽  
Process Condition ◽  
Single Layer ◽  
Multilayer Structures ◽  
Optimum Process ◽  
Electronic Circuits ◽  
Via Holes ◽  
Via Hole

In low temperature co-fired ceramic (LTCC) packaging which offers a good performance to produce multilayer structures with electronic circuits and components, the via-hole fabrication of LTCC ceramic-PET double layer sheets (green sheets or green tapes) by micro-scale punching plays an important role in providing an electric path for the interconnection between layers. Although conventional punching has been used widely and many researchers have provided useful insights of the process, they are restricted to the punching of single layer material. This paper discusses the characteristic of micro via-hole punching of double layer sheets and the optimum process condition for via-holes of good quality. Workpiece (double layer sheet) used in the present investigation consists of LTCC ceramic composite material layer (ceramic layer) of 20~100*m in thickness and PET layer of 38 and 75*m in thickness by tape-casting. The diameter of via-holes ranges from 100~300*m.

Multilayer Microelectromechanical Structures for Material Property Characterization

1998 ◽  
Vol 518 ◽  
Author(s):  
R. I. Pratt ◽  
G. C. Johnson
Keyword(s):  
Mass Density ◽  
Base Material ◽  
Single Layer ◽  
Analytical Techniques ◽  
Multilayer Structures ◽  
New Materials ◽  
Multilayered Structures ◽  
Micro Electro Mechanical Systems ◽  
Resonant Structures ◽  
Rigid Mass

AbstractA new class of micro-electro-mechanical systems (MEMS) for material characterization is presented. These multilayered structures are lateral resonators which allow the determination of material properties of the different materials making up the system. Of particular significance is the ability to characterize many new materials previously untestable by resonant techniques. The basic lateral resonant structures are made of a single material, usually doped polycrystalline silicon, with beams anchored to the substrate at one end and supporting a rigid mass at the other. The rigid mass has a comb-shaped region on each side for electrostatically actuating and sensing the motion. The use of this electrostatic comb drive requires that the structure be made of a material that is electrically conductive. Thus, the class of materials which is amenable to characterization by resonance techniques has been somewhat limited. Multilayer structures, tested in conjunction with these basic monolithic structures, permit properties of both the base material and the subsequent layers to be determined. Stiffness and mass density of many new materials can be obtained by comparing the behavior of multilayer structures with their single-layer counterparts. Experimental designs and the associated analytical techniques for obtaining various properties are presented.

scholarly journals Thickness and Interface-Dependent Structural, Magnetic, and Transport Properties of Cu/Co Thin Film and Multilayer Structures

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
R. Brajpuriya
Keyword(s):  
Particle Size ◽  
Transport Properties ◽  
Average Particle Size ◽  
Single Layer ◽  
Growth Conditions ◽  
Multilayer Structures ◽  
Average Particle ◽  
Saturation Field ◽  
Microstructural Parameters ◽  
Single Layer Film

Structural, magnetic, and transport properties of electron beam evaporated Co/Cu thin films and multilayer structures (MLS) having different layer thicknesses have been characterized utilizing X-ray diffraction (XRD), magnetooptical Kerr effect (MOKE), and resistivity techniques. The structural studies show distinctive crystal structures for different sublayer thicknesses. The Co (300 Å) single layer film is amorphous, while Cu (300 Å) film is nanocrystalline in nature. The average particle size is found to decrease as the number of interface increases. The corresponding magnetic and resistivity measurements show an increase in saturation field and resistivity as a result of an enhanced anisotropy. However, coercivity decreases with a reduction in average particle size. The results conclude that these properties are greatly influenced by various microstructural parameters such as layer thickness, number of bilayers, and the quality of interfaces molded under different growth conditions.

Electromigration in Al And Al-Alloy Thin-Film Conductors

1983 ◽  
Vol 25 ◽  
Author(s):  
R.W. Pasco ◽  
L.E. Felton ◽  
J.A. Schwarz
Keyword(s):  
Thin Film ◽  
Activation Energies ◽  
Al Alloy ◽  
Alloy Thin Film ◽  
Resistance Analysis ◽  
Temperature Ramp ◽  
Cu Thin Film ◽  
Kinetics Of

ABSTRACTTemperature-ramp Resistance Analysis to Characterize Electromigration (TRACE) has been applied to thin-film Al and Al-alloy conductors. Results have yielded activation energies in agreement with literature values. The TRACE technique has been used to determine the effect of H2on the kinetics of electromigration damage (EMD) for both Al and Al-2%Cu thin-film conductors.

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