Carrier dynamics in spatially ordered InAs quantum dots

2002 ◽  
Vol 719 ◽  
Author(s):  
Jörg Siegert ◽  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Rosa Leon ◽  
Sergio Chaparro ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
Misfit Dislocations ◽  
Nonradiative Recombination ◽  
Photoluminescence Intensity ◽  
Inas Quantum Dots ◽  
Dislocation Arrays ◽  
Spatial Ordering

AbstractSpatial ordering of InAs quantum dots was attained by using misfit dislocations generated in a metastable InGaAs layer by means of thermal annealing. Influence of quantum dot positional ordering and dot proximity to dislocation arrays on carrier dynamics was studied by timeresolved photoluminescence. Substantially narrower inhomogeneous broadening from the ordered quantum dots was observed. Excitation intensity dependence of the photoluminescence intensity and carrier lifetime indicates stronger influence of nonradiative recombination for the ordered quantum dot structures. Numerical simulations allow estimating electron and hole capture rates from the quantum dots to traps located either at the quantum dot interfaces or in the vicinity of the quantum dots.

scholarly journals Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties

2002 ◽  
Vol 91 (9) ◽  
pp. 5826-5830 ◽  
Author(s):  
R. Leon ◽  
S. Chaparro ◽  
S. R. Johnson ◽  
C. Navarro ◽  
X. Jin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Inas Quantum Dots ◽  
Spatial Ordering

scholarly journals The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Shuai Zhou ◽  
Yumin Liu ◽  
Pengfei Lu ◽  
Lihong Han ◽  
Zhongyuan Yu
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Elastic Anisotropy ◽  
Dislocation Segment ◽  
Misfit Dislocations ◽  
Preferential Formation ◽  
Mixed Dislocation ◽  
Dependent Model ◽  
The Right

Taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment. From the result, it is clear that the positions near the right edge of the quantum dot are the energy favorable areas for the noninterfacial 60° mixed dislocations.

Extended optical properties beyond band-edge of GaAs by InAs quantum dots and quantum dot molecules

2010 ◽  
Vol 87 (5-8) ◽  
pp. 1304-1307 ◽  
Author(s):  
O. Tangmettajittakul ◽  
S. Thainoi ◽  
P. Changmoang ◽  
S. Kanjanachuchai ◽  
S. Rattanathammaphan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Dot ◽  
Band Edge ◽  
Inas Quantum Dots ◽  
Quantum Dot Molecules

Carrier dynamics in self-assembled InAs quantum dots

2001 ◽  
Author(s):  
Xinhai Zhang ◽  
Jian R. Dong ◽  
Soo-Jin Chua
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Inas Quantum Dots ◽  
Self Assembled

The Strain Status of the Buried Self-assembled InAs quantum dots using MeV technique

2006 ◽  
Vol 916 ◽  
Author(s):  
Hsing-Yeh Wang ◽  
C.H. Chen ◽  
H. Niu ◽  
S.C. Wu ◽  
C.P. Lee
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Plane Strain ◽  
Growth Direction ◽  
Lateral Direction ◽  
Inas Quantum Dots ◽  
Self Assembled ◽  
First Time ◽  
Strain Status

AbstractThe strain status of the buried InAs self-assembled quantum dot was comprehended by measurement first time. Results show the in-plane strain is compressive and lattice in the growth direction is lager than the lattice of GaAs. The strain of the sample annealed at 650 degree relaxes in the growth direction. The growth and the lateral direction become relaxed in the sample annealed at 750 degree.

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