Time Resolved Studies of Proton Irradiated Quantum Dots

2002 ◽  
Vol 722 ◽  
Author(s):  
Saulius Marcinkevičius ◽  
Rosa Leon ◽  
Charlene Lobo ◽  
Brian Magness ◽  
William Taylor
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Proton Irradiation ◽  
Three Dimensional ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Dot Density ◽  
Gaas Quantum Dot ◽  
Time Resolved Photoluminescence

AbstractThe effects of proton irradiation on carrier dynamics were measured by time-resolved photoluminescence on InGaAs/GaAs quantum dot structures with different dot density and substrate orientation, as well as on InAlAs/AlGaAs quantum dots. Results were compared to irradiation effects on carrier dynamics in thin InGaAs quantum wells. We find that carrier lifetimes in QDs are much less affected by proton irradiation than in quantum wells, which can be attributed to the three-dimensional carrier confinement in quantum dots.

Semiconductor Nanostructures for Infrared Applications

2004 ◽  
Vol 99-100 ◽  
pp. 99-108
Author(s):  
N. Žurauskienė ◽  
S. Ašmontas ◽  
A. Dargys ◽  
J. Kundrotas ◽  
G. Janssen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Energy ◽  
Alpha Particles ◽  
Infrared Photodetector ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Quantum Dot Infrared Photodetector ◽  
Optically Detected ◽  
Microwave Excitation ◽  
Time Resolved Photoluminescence

We present the results of time-resolved photoluminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy investigations of semiconductor quantum dots and quantum wells. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission induced by 95 GHz microwave excitation and exciton fine structure was studied. Very long life times (up to 10 ns) of photoexcited carriers were observed in this system using TRPL at low temperatures and excitation intensities promising higher responsitivity of such QDs for quantum dot infrared photodetector development. The effects of proton and alpha particles irradiation on carrier dynamics were investigated on different InGaAs/GaAs, InAlAs/AlGaAs and GaAs/AlGaAs QD and QW systems. The obtained results demonstrated that carrier lifetimes in the QDs are much less affected by proton irradiation than that in QWs. A strong influence of irradiation on the PL intensity was observed in multiple QWs after high-energy alpha particles irradiation.

Time-resolved Photoluminescence and Carrier Dynamics in Vertically-coupled Self-assembled Quantum Dots

1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 674-680 ◽  
Author(s):  
I. Gontijo ◽  
G. S. Buller ◽  
J. S. Massa ◽  
A. C. Walker ◽  
S. V. Zaitsev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence
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