Ferroelectric and Dielectric Properties of Chemical-Solution-Derived Bismuth Lanthanum Titanate Thin Films with Various Bismuth Oxide Template layers

2002 ◽  
Vol 748 ◽  
Author(s):  
Dinghua Bao ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Ferroelectric Properties ◽  
Bottom Layer ◽  
Chemical Solution ◽  
Oriented Growth ◽  
Solution Deposition ◽  
Si Substrates ◽  
Chemical Solution Deposition Method ◽  
Lanthanum Titanate

ABSTRACT(Bi,La)4Ti3O12 (BLT) thin films with various Bi2O3 template layers were prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. Both of the BLT films with a thin Bi2O3 template layer and those without a Bi2O3 layer had a highly c-axis oriented growth, while both of the BLT films with a thin Bi2O3 bottom layer and those with a Bi2O3 intermediate layer were highly c-axis oriented. It was found that the use of Bi2O3 template layers improved significantly the ferroelectric properties of BLT thin films. In addition, the thin films with a thin Bi2O3 template layer showed good dielectric properties. All the capacitors with Bi2O3 template layers showed high polarization fatigue resistance and good retention properties.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Materials ◽  
Processing Temperature ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Influence of Excess Potassium on Structural and Ferroelectric Properties of Lead-Free Bi0.5K0.5TiO3 Thin Films

2021 ◽  
Vol 21 (4) ◽  
pp. 2681-2686
Author(s):  
Nguyen Ngoc Minh ◽  
Bui Van Dan ◽  
Nguyen Duc Minh ◽  
Guus Rijnders ◽  
Ngo Duc Quan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Chemical Solution ◽  
Ferroelectric Films ◽  
Solution Deposition ◽  
Si Substrates ◽  
Excess Amount

Lead-free Bi0.5K0.5TiO3 (BKT) ferroelectric films were synthesized on Pt/Ti/SiO2/Si substrates via the chemical solution deposition. The influence of the excess potassium on the microstructures and the ferroelectric properties of the films was investigated in detail. The results showed that the BKT films have reached the well-crystallized state in the single-phase perovskite structure with 20 mol.% excess amount of potassium. For this film, the ferroelectric properties of the films were significantly enhanced. The remnant polarization (Pr) and maximum polarization (Pm) reached the highest values of 9.4 μC/cm2 and 32.2 μC/cm2, respectively, under the electric field of 400 kV/cm.

scholarly journals Ferroelectric and dielectric properties of Ca2+-doped and Ca2+–Ti4+ co-doped K0.5Na0.5NbO3 thin films

2020 ◽  
Vol 8 (15) ◽  
pp. 5102-5111
Author(s):  
Nikolai Helth Gaukås ◽  
Julia Glaum ◽  
Mari-Ann Einarsrud ◽  
Tor Grande
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Co Doped

Doped K0.5Na0.5NbO3 films with good ferroelectric and dielectric properties were prepared by aqueous chemical solution deposition on platinized Si substrates.

Ti-site Substitution Using the Higher-valent Cation for Enhancing the Ferroelectric Properties of Nd3+−substituted Bismuth Titanate Thin Films

2003 ◽  
Vol 784 ◽  
Author(s):  
Hiroshi Uchida ◽  
Seiichiro Koda ◽  
Hirofumi Matsuda ◽  
Takashi Iijima ◽  
Takayuki Watanabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates

ABSTRACTTi-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd)4Ti3O12(BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50)1-(x/12)(Ti3.00-xVx)O15(x= 0 ∼ 0.09), were fabricated on (111)Pt/Ti/ SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

Lead Free Bi1/2Na1/2TiO3-CoFe2O4 Magnetoelectric Nanoparticulate Composite Thin Films Prepared by Chemical Solution Deposition Method

2018 ◽  
Vol 765 ◽  
pp. 30-33
Author(s):  
Vinod Kumar ◽  
Mintu Tyagi
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Nanocomposite Films ◽  
Chemical Solution ◽  
Secondary Phases ◽  
Solution Deposition ◽  
Great Opportunity ◽  
Chemical Solution Deposition Method

Magnetoelectric (1−x) BNT−xCFO nanoparticulate thin films with (x= 0, 0.1, 0.2, 0.3) were fabricated by a chemical solution deposition technique. The X-ray diffraction shows that no other secondary phases are observed. Transmission electron microscope (TEM) revels that CFO nanoparticles were well distributed in matrix of BNT. The nanocomposite films exhibit both good magnetic and ferroelectric properties at room temperature (R-T), as well as enhanced magnetoelectric coupling. The composite withx= 0.2, showed the large value ofMEvoltage coefficient (αE) ~ 163 mV/cmOe. TheseMEcomposites provide a great opportunity as potential lead free systems forMEdevices.

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