Electrical and Optical Properties of Amorphous Si1-xSnx: H Structures

1986 ◽  
Vol 77 ◽  
Author(s):  
D. Girginoudi ◽  
A. Thanailakis ◽  
A. Christou
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Entire Range ◽  
Conductivity Measurements ◽  
Electrical And Optical Properties ◽  
Hydrogenated Silicon ◽  
Tin Films ◽  
Amorphous Hydrogenated Silicon ◽  
Conductivity Increase ◽  
Band Edge Luminescence

ABSTRACTAmorphous hydrogenated silicon-tin films (α — Six Snx:H) have been prepared by co-electron beam and Knudsen cell deposition. It is shown that the dependence of Eg on x, over the entire range of 0 < x < 0.51 studied, cannot be described by a single linear relationship. The d.c. conductivity measurements indicate two distinct conduction regions as a function of x. The addition of Sn up to x = 0.10 creates a high density of dangling bonds and moves the band edges so a significant conductivity increase is observed. The bonding between Si and H is preferred to Sn and H. Sn-H bonds were observed only for x > 0.40. Photoluminescence measurements show that band edge luminescence dominates at 1.3–1.4 eV.

A ternary–3D analysis of the optical properties of amorphous hydrogenated silicon–rich carbide

2019 ◽  
Vol 221 ◽  
pp. 301-310
Author(s):  
C. Summonte ◽  
F. Gaspari ◽  
S. Quaranta ◽  
R. Rizzoli ◽  
E. Centurioni ◽  
...  
Keyword(s):  
Optical Properties ◽  
3D Analysis ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

Correlation of the structure with electrical and optical properties of thin tin films

1982 ◽  
Vol 94 (2) ◽  
pp. 133-142 ◽  
Author(s):  
E.A. Abou-Saif ◽  
A.A. Mohamed ◽  
M.G. El-Khodary
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Tin Films

Optical properties of thin amorphous silicon and amorphous hydrogenated silicon films produced by ion beam techniques

1983 ◽  
Vol 100 (2) ◽  
pp. 141-148 ◽  
Author(s):  
P.J. Martin ◽  
R.P. Netterfield ◽  
W.G. Sainty ◽  
D.R. McKenzie
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Ion Beam ◽  
Silicon Films ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

Electron Beam Dose and PMMA Thickness Dependent Circularity and Diameter Analysis of Au Nanodots

2019 ◽  
Vol >15 (5) ◽  
pp. 486-491 ◽  
Author(s):  
Furkan Kuruoğlu ◽  
Özgür Yavuzçetin ◽  
Ayşe Erol
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Thermal Evaporation ◽  
Exposure Dose ◽  
Homogeneous Distribution ◽  
Electrical And Optical Properties ◽  
Beam Dose ◽  
Au Nanodots

Background: The electrical and optical properties of nanoparticle-based devices depend on the shape, dimension and uniformity of these particles. Methods: In this work, we fabricated ordered Au nanodots using electron beam lithography and thermal evaporation. Au nanodot diameter and circularity varied with a changed exposure dose and resist thickness. Electron beam dose ranged from 5 fC to 200 fC for single dot patterns. Commonly used PMMA thin films of thicknesses 60 nm and 100 nm coated samples were used for investigating the resist thickness dependency with varying dose exposure. Results: The analyses of patterns show that the diameter and circularity of the Au nanodots ranged from smaller to larger diameters and from lower to higher circularities with increasing dose and resist thickness. Conclusion: The distributions of the nanodot diameter began to show Gaussian behavior at larger electron doses. Besides, single circularity value became dominant up to the medium doses and then a homogeneous distribution was observed with the increasing dose.

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