Transparent Transistor Development

2003 ◽  
Vol 796 ◽  
Author(s):  
D. Hong ◽  
N. L. Dehuff ◽  
R. E. Presley ◽  
C. L. Munsee ◽  
J. P. Bender ◽  
...  
Keyword(s):  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Transparent Electronics ◽  
Device Structure ◽  
Active Matrix ◽  
Performance Results ◽  
Matrix Liquid ◽  
Transparent Thin Film Transistor

ABSTRACTTransparent electronics is an embryonic technology whose objective is the realization of invisible electronic circuits. We have recently reported the fabrication of a novel n-channel transparent thin-film transistor (TTFT). [1] This ZnO-based TTFT is highly transparent and exhibits electrical characteristics that appear to be suitable for implementation as a transparent select-transistor in each pixel of an active-matrix liquid-crystal display. Moreover, the processing technology used to fabricate this device is relatively simple and appears to be compatible with inexpensive glass substrate technology. The objective of the work reported herein is to summarize some of our recent TTFT electrical performance results. Materials, processing, and device structure details related to these devices appear in future publications.

A Novel Self-Aligned Field Induced Drain Polycrystalline Silicon Thin Film Transistor Fabricated by using a Selective Side Etch Process

2006 ◽  
Vol 910 ◽  
Author(s):  
Ta-Chuan Liao ◽  
Chun-Yu Wu ◽  
Feng-Tso Chien ◽  
Chun-Chien Tsai ◽  
Hsiu-Hsin Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Electrical Performance ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Light Emitting ◽  
Gate Structure ◽  
Vacuum Gaps ◽  
Matrix Liquid

AbstractA novel T-shaped-gated (T-Gate) polycrystalline silicon thin-film transistor (poly-Si TFT) with vacuum gaps has been proposed and fabricated only with a simple process. The T-Gate structure is formed only by a selective undercut-etching technology of the Mo/Al bi-layers. Then, vacuum gaps are in-situ embedded in this T-Gate structure subsequent to capping the SiH4-based passivation oxide under the vacuum process chamber. Experimental results reveal that the proposed T-Gate poly-Si TFTs have excellent electrical performance, which has higher maximum on-off current ratio of 4.6 e107, and the lower off-state leakage current at VGS = -10 V and VDS = 5V of about 100 times less than that of the conventional one. It is attributed to the additional undoped offset region and the vacuum gap to reduce the maximum electric field at drain junction while ascribed to the sub-gate to maintain the on-current. Therefore, such a T-Gate poly-Si TFT is very suitable for the applications and manufacturing in active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting diodes (AMOLEDs).

Low Temperature Silicides for Poly-Silicon Thin Film Transistor Applications

1995 ◽  
Vol 402 ◽  
Author(s):  
G. T. Sarcona ◽  
M. K. Hatalis
Keyword(s):  
Thin Film ◽  
Sheet Resistance ◽  
Thin Film Transistor ◽  
Surface Preparation ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Cobalt Nickel ◽  
Silicon Materials ◽  
Cobalt Silicides ◽  
Matrix Liquid

AbstractThin films of cobalt, nickel, and tungsten were sputtered on three types of silicon materials to explore their potential for use as silicides in thin film transistor technologies for active matrix liquid crystal displays. The metals were sputtered onto single-crystal, polycrystalline, and amorphous silicon. The metals were annealed in vacuum after deposition over temperatures ranging from 250°C to 750°C. The sheet resistance of the resulting silicide films was measured using a four point probe apparatus. Cobalt silicides with sheet resistance of less than 4 Ω/ were formed at 600°C. Nickel produced films with sheet resistance below 10 Ω/▪ at 350°C, though the surface was required to be vacuum-clean. In this study, tungsten did not produce silicides. Surface preparation has been found to be an important factor in tungsten and nickel silicidation.

22.3: A 3.4-inch Reflective Colour Active Matrix Liquid Crystal Display without Polarisers

2002 ◽  
Vol 33 (1) ◽  
pp. 798 ◽  
Author(s):  
T. Kretz ◽  
G. Gomez ◽  
H. Lebrun ◽  
D. Coates ◽  
S. Reaney
Keyword(s):  
Liquid Crystal ◽  
Liquid Crystal Display ◽  
Active Matrix ◽  
Matrix Liquid

Image Quality of Two-Primary Color Active-Matrix Liquid-Crystal Displays

1997 ◽  
Vol 39 (4) ◽  
pp. 618-641 ◽  
Author(s):  
David L. Post ◽  
William F. Reinhart
Keyword(s):  
Liquid Crystal ◽  
Image Quality ◽  
Liquid Crystal Display ◽  
Active Matrix ◽  
Primary Color ◽  
Aperture Ratio ◽  
Full Color ◽  
Series Of Experiments ◽  
Matrix Liquid

The demand for color head- and helmet-mounted displays (HMDs) is growing. Interest focuses on full-color systems, but a limited color repertoire is sufficient for some applications and can reduce cost and complexity significantly, especially when subtractive-color active-matrix liquid-crystal display (AMLCD) technology is used. We report a series of experiments that investigated important questions about the design and merits of two-primary color AMLCDs for HMD applications. Our main conclusion is that the image quality of a subtractive-color AMLCD with high (≥70%) aperture ratio is superior to a comparable, conventional color AMLCD. Evidence regarding requirements for resolution, aperture ratio, and gray scale is also provided.

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