Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
D. Pastor ◽  
R. Cuscó ◽  
L. Artus ◽  
F. Naranjo ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Vibrational Modes ◽  
High Concentration ◽  
Local Modes ◽  
Metal Organic ◽  
Scattering Study ◽  
Local Vibrational Modes

ABSTRACTWe report a Raman scattering study of local vibrational modes (LVMs) on Mg-doped GaN grown by molecular beam epitaxy (MBE). Besides Mg:Ga local vibrational modes clearly observed at 262 and 565 cm−1, several peaks were detected in the spectral regions around 2200 cm−1 and 2900 cm−1. The modes in the 2200 cm−1 spectral region correspond to local modes of hydrogen complexes and hydrogen-decorated defects, and indicate the presence of a fairly high concentration of H in the samples. The peaks observed in the 2900 cm−1 region are assigned to carbon-hydrogen local modes and are indicative of the presence of C impurities in the samples. These measurements show that both C and H impurities may be present in sizable amounts not only in metal-organic chemical vapor deposition (MOCVD) samples but also in MBE grown samples, and this may have an effect on the electrical conductivity ofp-type GaN:Mg samples.

The Role of Nitrogen-Induced Localization and Defects in InGaAsN (? 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

2001 ◽  
Vol 692 ◽  
Author(s):  
Steven R Kurtz ◽  
A. A. Allermana ◽  
J. F. Klem ◽  
R. M. Sieg ◽  
C. H. Seager ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Carrier Diffusion ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractNitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (≈ 1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (Ęmean free path ) material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we find significant electron diffusion in the MBE material (reversed from the hole diffusion occurring in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a “universal”, nitrogen-related defect.

Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine

1989 ◽  
Vol 145 ◽  
Author(s):  
L. M. Fraas ◽  
G. R. Girard ◽  
V. S. Sundaram ◽  
Chris Master ◽  
Rick Stall
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
High Throughput ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Production Environment ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractMetal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are well established methods for growing epitaxial GaAs and AlGaAs films. However, MOCVD equip- ment uses the highly toxic gas, arsine, and MBE equipment is very costly and coats only one wafer at a time. We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated in a production environment.

Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy

1994 ◽  
Vol 339 ◽  
Author(s):  
N. Newman ◽  
T.C Fu ◽  
X. Liu ◽  
Z. Liliental-Weber ◽  
M. Rubin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Optimum Conditions ◽  
Mbe Growth ◽  
Light Emitting ◽  
Metal Organic ◽  
Stable Growth ◽  
Organic Chemical Vapor Deposition

AbstractGallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.

Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

2004 ◽  
Vol 84 (6) ◽  
pp. 897-899 ◽  
Author(s):  
R. Cuscó ◽  
L. Artús ◽  
D. Pastor ◽  
F. B. Naranjo ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vibrational Modes ◽  
Local Vibrational Modes ◽  
Mg Doped
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