Structural Study of V-like Columnar Inversion Domains in AlN Grown on Sapphire

2003 ◽  
Vol 798 ◽  
Author(s):  
J. Jasinski ◽  
T. Tomaszewicz ◽  
Z. Liliental-Weber ◽  
Q. S. Paduano ◽  
D. W. Weyburne

ABSTRACTV-like columnar inversion domains with a divergence angle of about 4.5° ± 1° grown in AlN films with N-polarity were studied using transmission electron microscopy (TEM) and atomic force microscopy. Such domains emerge at the surface forming a small islands in form of hexagonal, truncated pyramids. A model of such pyramid was proposed. TEM studies indicate a displacement of c/2 along the [0001] direction at the inversion domain boundary. A boundary itself is composed of long segments located on the {1100} planes, which are alternated by short segments on some inclined planes.

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.


2020 ◽  
Vol 98 (5) ◽  
pp. 365-375
Author(s):  
Andrea Quintero ◽  
Patrice Gergaud ◽  
Jean-Michel Hartmann ◽  
Vincent Delaye ◽  
Nicolas Bernier ◽  
...  

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