Electrical Properties of β -FeSi2/Si Hetero-Diode Improved by Pulsed Laser Annealing

2003 ◽  
Vol 799 ◽  
Author(s):  
Keiichi Tsuchiya ◽  
Noboru Miura ◽  
Hironaga Matsumoto ◽  
Ryotaro Nakano ◽  
Shin-ichiro Uekusa
Keyword(s):  
Electrical Properties ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Excimer Laser Annealing ◽  
Iron Disilicide ◽  
Β Phase ◽  
Pulsed Laser Annealing ◽  
Phase Crystal ◽  
Graded Junction

ABSTRACTβ-phase iron disilicide (β-FeSi2) was obtained on n-type silicon (111) substrate by using excimer laser annealing (ELA). β-phase crystal which have good electrical properties was grown within a narrow annealing condition such as energy density. All samples were annealed by excimer laser show n-type characteristic. Graded junction was formed in FeSi2/Si hetero diode.

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Electrical properties for poly-Ge films fabricated by pulsed laser annealing

2006 ◽  
Vol 508 (1-2) ◽  
pp. 315-317 ◽  
Author(s):  
Hajime Watakabe ◽  
Toshiyuki Sameshima ◽  
Hiroshi Kanno ◽  
Masanobu Miyao
Keyword(s):  
Electrical Properties ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Crystallization Kinetics of Hydrogenated Amorphous Silicon During Pulsed Excimer Laser Annealing

1992 ◽  
Vol 258 ◽  
Author(s):  
S. E. Ready ◽  
J. H. Roh ◽  
J. B. Boyce ◽  
G. B. Anderson
Keyword(s):  
Amorphous Silicon ◽  
Crystallization Kinetics ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Molten Silicon ◽  
Excimer Laser Annealing ◽  
Pulsed Laser Annealing ◽  
Explosive Crystallization ◽  
Silicon Bulk ◽  
Kinetics Of

ABSTRACTExplosive crystallization of amorphous silicon (a-Si) during pulsed laser annealing occurs at an intermediate laser energy fluence above the threshold for surface melting. Mediated by a molten silicon layer which is undercooled with respect to crystalline silicon and above the melting point of a-Si, the crystallization interface drives down into the sample, sustaining itself due to the difference in the latent heats of the crystalline and amorphous silicon. Explosive crystallization has been the subject of numerous studies which have for the most part been restricted to ion implanted amorphized layers in silicon bulk samples. In this study we examine the crystallization kinetics of vapor deposited thin films of hydrogenated a-Si for films of differing hydrogen content and substrate temperature. We reevaluate current models of interface and nucleation kinetics qualitatively in light of these results. The fundamental physical mechanisms in these non-equilibrium phase transitions during pulsed laser annealing are discussed.

Raman Studies of Carrier Activation in Laser Annealed GaAs Capped with Silicon Nitride

1986 ◽  
Vol 74 ◽  
Author(s):  
A. Compaan ◽  
S. C. Abbi ◽  
H. D. Yao ◽  
A. Bhat ◽  
F. Hashmi
Keyword(s):  
Silicon Nitride ◽  
Laser Pulse ◽  
Raman Scattering ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Dye Laser ◽  
Pulsed Laser Annealing ◽  
Wide Range ◽  
Xecl Excimer Laser

AbstractCarrier concentrations exceeding 1019/cm3 in GaAs implanted with Si (2 × 1014/cm2 @ 140 keV) have been obtained by pulsed laser annealing with either a dye laser (λ = 728 nm) or a XeCl excimer laser (λ = 308 nm). Carrier concentrations were measured by plasmon Raman scattering over a wide range of anneal energy densities. Compared with capless laser annealing, much higher carrier activations were achieved when the annealing laser pulse was incident through a Si3N4 cap.

scholarly journals Optical and electrical properties of SnO2thin films after ultra-short pulsed laser annealing

2013 ◽  
Author(s):  
D. Scorticati ◽  
A. Illiberi ◽  
G. R. B. E. Römer ◽  
T. Bor ◽  
W. Ogieglo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical And Electrical Properties ◽  
Pulsed Laser Annealing
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