Development of transparent conductive oxide materials for improved back reflector performance for amorphous silicon based solar cells

2004 ◽  
Vol 808 ◽  
Author(s):  
Scott J. Jones ◽  
David Tsu ◽  
Tongyu Liu ◽  
Jeff Steele ◽  
Rey Capangpangan ◽  
...  
Keyword(s):  
Solar Cell ◽  
Structural Analysis ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Oxide Materials ◽  
Conductive Oxide ◽  
Back Reflector ◽  
Silicon Based ◽  
Conversion Efficiencies ◽  
Substrate Temperatures

ABSTRACTA new back reflector comprised of an Al/(multi-layered stack)/ZnO structure is being developed to replace Al/ZnO used in manufacturing and boost conversion efficiencies with improved back reflector performance. Use of the multi-layered stack should lead to improved reflectivity which will in turn improve solar cell currents and efficiencies. The results from studies of different transparent conductive oxides (TCOs) which comprise the multi-layered stack are reported with emphasis on ZnO alloys. Alloying with Si or MgF2 and using moderately high substrate temperatures, TCOs with low indices of refraction between 1.6 and 1.7 have been fabricated. The Si, Mg and F contents for these alloys were near 14, 12 and 33 at.%. Structural analysis demonstrates that alloys with MgF2 have smother surfaces and finer morphologies than those for ZnO. The expected high values for multi-layered structures with these alloys have yet to be achieved but this is likely due to properties of layers in the structure other than the ZnO alloys which have yet to be fully optimized.

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

Amorphous Silicon based Solar Cell Technologies: Status, Challenges, and Opportunities

2004 ◽  
Vol 808 ◽  
Author(s):  
Rajeewa R. Arya
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Commercial Application ◽  
Amorphous Silicon Solar Cell ◽  
Building Integrated Photovoltaic ◽  
Photovoltaic Applications ◽  
Challenges And Opportunities ◽  
Module Development ◽  
Silicon Based ◽  
Conversion Efficiencies

ABSTRACTAdvances in amorphous silicon solar cell and module development over the past two decades has led to widespread commercial application in consumer and building integrated photovoltaic applications (BIPV). The technology has taken two pathways: (i) superstrate and (ii) substrate. Both pathways have unique advantages over crystalline modules and have demonstrated promising stability and reliability with continuous improvement in performance. Multi-junction modules with amorphous and microcrystalline silicon have demonstrated initial conversion efficiencies in the range of 13%-13.5%.

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Silicon-Based Solar Cell Fabricated by Metal-Induced Lateral Crystallization of Amorphous Silicon Film

2006 ◽  
Vol 45 (10A) ◽  
pp. 7675-7676 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Tzu-Yi Chi ◽  
Jun-Chin Liu ◽  
Chung-Yuan Kung ◽  
In-Cha Hsein
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Amorphous Silicon Film ◽  
Lateral Crystallization ◽  
Silicon Based

Impact of the transparent conductive oxide work function on injection-dependent a-Si:H/c-Si band bending and solar cell parameters

2013 ◽  
Vol 113 (14) ◽  
pp. 144513 ◽  
Author(s):  
R. Rößler ◽  
C. Leendertz ◽  
L. Korte ◽  
N. Mingirulli ◽  
B. Rech
Keyword(s):  
Solar Cell ◽  
Work Function ◽  
Transparent Conductive Oxide ◽  
Band Bending ◽  
Cell Parameters ◽  
Conductive Oxide

Fabrication and characterization of coil type transparent conductive oxide-less cylindrical dye-sensitized solar cells

RSC Advances ◽  
2014 ◽  
Vol 4 (44) ◽  
pp. 22959-22963 ◽  
Author(s):  
Gaurav Kapil ◽  
Jin Ohara ◽  
Yuhei Ogomi ◽  
Shyam S. Pandey ◽  
Tingli Ma ◽  
...  
Keyword(s):  
Solar Cell ◽  
Mass Production ◽  
Dye Sensitized Solar Cells ◽  
Transparent Conductive Oxide ◽  
Solar Cell Performance ◽  
Dye Sensitized ◽  
Conductive Oxide ◽  
Fabrication And Characterization ◽  
Sensitized Solar Cells

A novel coil based cylindrical architecture for TCO-less DSSC is reported. The steps of fabrication involved are relatively fast and easy for the mass production of DSSC. Advantages over the previous cylindrical architectures in many aspects are described. The effect of different metal wire characteristics on the solar cell performance is discussed in detail.

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