RELIEF RECORDING SILVER AT DIRECT LASER EXPOSURE ON THE LAYER OF AMORPHOUS SILICON

Results of direct laser recording on a two-component medium consisting of deposited layers of amorphous silicon and silver on a glass substrate by magnetron sputtering are presented. A single-mode semiconductor laser with λ = 405 nm for amorphous silicon film on glass substrate with a power of 120 mW is used for direct laser recording on amorphous silicon. Formation of the relief on the silver film with direct recording pulses of a semiconductor laser with λ = 405 nm at the a-Si layer is taken on the electron microscope TESCAN VEGA 3 LMH.