Modeling and Simulation of the Percolation Problem in High-Tc Superconductors: Role of Crystallographic Constraints on Grain Boundary Connectivity

2004 ◽  
Vol 819 ◽  
Author(s):  
Megan Frary ◽  
Christopher A. Schuh

AbstractSuperconductivity in high-Tc materials is often modeled as a percolation problem in which grain boundaries are classified as strong or weak-links for current transmission based on their disorientation angle. Using Monte Carlo simulations, we have explored the topology and percolation thresholds for grain boundary networks in orthorhombic and tetragonal polycrystals where the grain boundary disorientations are assigned in a crystallographically consistent manner. We find that the networks are highly nonrandom, and that the percolation thresholds differ from those found with standard percolation theory. For biaxially textured materials, we have also developed an analytical model that illustrates the role of local crystallographic constraint on the observed nonrandom behavior.

Author(s):  
R. P. J. IJsselsteijn ◽  
J. W. M. Hilgenkamp ◽  
D. Terpstra ◽  
J. Flokstra ◽  
H. Rogalla

1992 ◽  
Vol 275 ◽  
Author(s):  
Donglu Shi ◽  
S. Sengupta ◽  
K. C. Goretta ◽  
S. Salem-Sugui ◽  
M. Smith ◽  
...  

ABSTRACTThe transport critical current density (Jc) for high-Tc thin films, bicrystals, and bulk ceramics is shown to be determined by magnetic field penetration into the grain boundaries. The gross grain orientations may not in all cases be an important factor in determining this penetration. The parameter (λG/λj)2can characterize the strength of the grain boundary coupling, which depends mainly on the crystal coherence and connectivity at the boundary area.


Author(s):  
A.H. Advani ◽  
L.E. Murr ◽  
D. Matlock

Thermomechanically induced strain is a key variable producing accelerated carbide precipitation, sensitization and stress corrosion cracking in austenitic stainless steels (SS). Recent work has indicated that higher levels of strain (above 20%) also produce transgranular (TG) carbide precipitation and corrosion simultaneous with the grain boundary phenomenon in 316 SS. Transgranular precipitates were noted to form primarily on deformation twin-fault planes and their intersections in 316 SS.Briant has indicated that TG precipitation in 316 SS is significantly different from 304 SS due to the formation of strain-induced martensite on 304 SS, though an understanding of the role of martensite on the process has not been developed. This study is concerned with evaluating the effects of strain and strain-induced martensite on TG carbide precipitation in 304 SS. The study was performed on samples of a 0.051%C-304 SS deformed to 33% followed by heat treatment at 670°C for 1 h.


Author(s):  
H.-J. Ou ◽  
J. M. Cowley

Using the dedicate VG-HB5 STEM microscope, the crystal structure of high Tc superconductor of YBa2Cu3O7-x has been studied via high resolution STEM (HRSTEM) imaging and nanobeam (∽3A) diffraction patterns. Figure 1(a) and 2(a) illustrate the HRSTEM image taken at 10' times magnification along [001] direction and [100] direction, respectively. In figure 1(a), a grain boundary with strong field contrast is seen between two crystal regions A and B. The grain boundary appears to be parallel to a (110) plane, although it is not possible to determine [100] and [001] axes as it is in other regions which contain twin planes [3]. Following the horizontal lattice lines, from left to right across the grain boundary, a lattice bending of ∽4° is noticed. Three extra lattice planes, indicated by arrows, were found to terminate at the grain boundary and form dislocations. It is believed that due to different chemical composition, such structure defects occur during crystal growth. No bending is observed along the vertical lattice lines.


Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


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