Ultrafast Laser Processing for Lab-on-a-Chip Device Manufacture

2004 ◽  
Vol 850 ◽  
Author(s):  
Koji Sugioka ◽  
Ya Cheng ◽  
Katsumi Midorikawa

ABSTRACT3D microstructuring of photosensitive glass is demonstrated by femtosecond (fs) laser for lab-on-a-chip manufacture. True 3D hollow microstructures embedded in the glass are fabricated by the fs laser direct write followed by heat treatment and successive wet etching. A variety of microcomponents for a lab-on-a-chip device like a microfluidics, a microvalve, a microoptics, a microlaser, etc. are fabricated by using this technique. The fs laser direct write process is also applied for selective metallization of internal walls of the hollow microstructures embedded in the glass for electric control of movement of the micromechanical components in the lab-on-a-chip device.

2008 ◽  
Vol 93 (24) ◽  
pp. 243304 ◽  
Author(s):  
H, Charles Tapalian ◽  
Jason Langseth ◽  
Ying Chen ◽  
James W. Anderegg ◽  
Joseph Shinar

2015 ◽  
Vol 23 (6) ◽  
pp. 7767 ◽  
Author(s):  
Simon Gross ◽  
Mykhaylo Dubov ◽  
Michael J. Withford

1989 ◽  
Vol 154 ◽  
Author(s):  
Y.S. Liu ◽  
H. S. Cole

AbstractThe interest in laser processing technology has increased significantly in recent years because of increasing demands for application-specific IC design and fabrication, yield enhancement, circuit restructuring, and prototyping; all of these benefit from an adaptive processing technique using direct energy for improvement of precision, resolution, process automation, and turnaround time. This paper reviews several laser-patterned metallization techniques developed for high-density multichip interconnection applications. Key material and process requirements for developing a viable laser-direct-write interconnect technique on polyimide are addressed.


2021 ◽  
Vol 33 (1) ◽  
pp. 012009
Author(s):  
Aiko Narazaki ◽  
Hideyuki Takada ◽  
Dai Yoshitomi ◽  
Kenji Torizuka ◽  
Yohei Kobayashi

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.


2011 ◽  
Vol 1319 ◽  
Author(s):  
Michael J. Abere ◽  
Ryan D. Murphy ◽  
Bianca Jackson ◽  
Gerard Mourou ◽  
Michel Menu ◽  
...  

ABSTRACTAn ultrafast laser irradiation method for the removal of corrosion from Daguerreotypes without detrimentally affecting image quality has been developed. Corrosion products such as silver oxide and silver sulfide may be removed by chemical cleaning but these reactions are hard to control and are often damaging to the underlying silver, ruining the image. The Ti:Sapphire 150 fs laser pulses used in this study are focused to a beam diameter of 60 μm and are normally incident to the Daguerreotype. It was found that the corrosion layer has a lower material removal threshold than silver allowing for removal of corrosion with minimal removal of vital information contained in the silver substrate.


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