Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

MRS Proceedings ◽

10.1557/proc-90-397 ◽

1986 ◽

Vol 90 ◽

Author(s):

Debra L. Kaiser ◽

Piotr Becla

Keyword(s):

Carrier Concentration ◽

Vapor Phase ◽

Infrared Detector ◽

Vapor Phase Epitaxy ◽

Diffusion Method ◽

Depth Profiles ◽

Growth Properties ◽

Concentration Depth Profiles

ABSTRACTClose-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

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ChemInform Abstract: METHOD FOR DETERMINATION OF DIFFUSION COEFFICIENTS FROM CARRIER CONCENTRATION DEPTH PROFILES IN SILICON

Chemischer Informationsdienst ◽

10.1002/chin.198044008 ◽

1980 ◽

Vol 11 (44) ◽

Author(s):

A. BAKOWSKI

Keyword(s):

Carrier Concentration ◽

Diffusion Coefficients ◽

Depth Profiles ◽

Abstract Method ◽

Concentration Depth Profiles

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Growth and carrier concentration control of Hg1−xCdxTe heterostructures using isothermal vapor phase epitaxy and vapor phase epitaxy techniques

10.1063/1.41090 ◽

1991 ◽

Author(s):

S. B. Lee ◽

D. Kim ◽

D. A. Stevenson

Keyword(s):

Carrier Concentration ◽

Vapor Phase ◽

Vapor Phase Epitaxy

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Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

Solid-State Electronics ◽

10.1016/s0038-1101(01)00088-0 ◽

2001 ◽

Vol 45 (5) ◽

pp. 711-715 ◽

Author(s):

D. Huang ◽

F. Yun ◽

M.A. Reshchikov ◽

D. Wang ◽

H. Morkoç ◽

...

Keyword(s):

Carrier Concentration ◽

Vapor Phase ◽

Hall Mobility ◽

Vapor Phase Epitaxy ◽

Hydride Vapor Phase Epitaxy ◽

Free Standing ◽

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Method for Determination of Diffusion Coefficients from Carrier Concentration Depth Profiles in Silicon

Journal of The Electrochemical Society ◽

10.1149/1.2129968 ◽

1980 ◽

Vol 127 (7) ◽

pp. 1644-1649 ◽

Author(s):

A. Bakowski

Keyword(s):

Carrier Concentration ◽

Diffusion Coefficients ◽

Depth Profiles ◽

Concentration Depth Profiles

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Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.08.029 ◽

2011 ◽

Vol 315 (1) ◽

pp. 64-67 ◽

Author(s):

Tomonari Sato ◽

Manabu Mitsuhara ◽

Ryuzo Iga ◽

Shigeru Kanazawa ◽

Yasuyuki Inoue

Keyword(s):

Carrier Concentration ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Growth and carrier concentration control of Hg1−xCdxTe heterostructures using isothermal vapor phase epitaxy and vapor phase epitaxy techniques

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585437 ◽

1991 ◽

Vol 9 (3) ◽

pp. 1639 ◽

Author(s):

S. B. Lee

Keyword(s):

Carrier Concentration ◽

Vapor Phase ◽

Vapor Phase Epitaxy

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Enhancement of free‐carrier concentration inn‐type AlxGa1−xAs grown by metalorganic vapor phase epitaxy in the temperature range 850–950 °C

Applied Physics Letters ◽

10.1063/1.100775 ◽

1989 ◽

Vol 54 (12) ◽

pp. 1121-1123 ◽

Author(s):

P. Basmaji ◽

A. Zaouk ◽

P. Gibart ◽

D. Gauthier ◽

J. C. Portal

Keyword(s):

Carrier Concentration ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Free Carrier ◽

Free Carrier Concentration ◽

Temperature Range

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Application of IR variable angle spectroscopic ellipsometry to the determination of free carrier concentration depth profiles

Thin Solid Films ◽

10.1016/s0040-6090(97)00973-5 ◽

1998 ◽

Vol 313-314 ◽

pp. 661-666 ◽

Author(s):

Thomas E. Tiwald ◽

Daniel W. Thompson ◽

John A. Woollam ◽

Wayne Paulson ◽

Robert Hance

Keyword(s):

Carrier Concentration ◽

Spectroscopic Ellipsometry ◽

Free Carrier ◽

Free Carrier Concentration ◽

Depth Profiles ◽

Variable Angle ◽

Variable Angle Spectroscopic Ellipsometry ◽

Concentration Depth Profiles

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Extreme reduction of on-resistance in vertical GaN p–n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method

Applied Physics Express ◽

10.35848/1882-0786/aba018 ◽

2020 ◽

Vol 13 (7) ◽

pp. 071010

Author(s):

Junichi Takino ◽

Tomoaki Sumi ◽

Yoshio Okayama ◽

Akira Kitamoto ◽

Masayuki Imanishi ◽

...

Keyword(s):

Dislocation Density ◽

Carrier Concentration ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

High Carrier Concentration ◽

Low Dislocation Density ◽

High Carrier ◽

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Improved selective area growth properties in metalorganic vapor phase epitaxy by adding HCl

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) ◽

10.1109/iciprm.1998.712468 ◽

2002 ◽

Author(s):

T. Tsuchiya

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

Growth Properties

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