Enhancement of free‐carrier concentration inn‐type AlxGa1−xAs grown by metalorganic vapor phase epitaxy in the temperature range 850–950 °C

1989 ◽  
Vol 54 (12) ◽  
pp. 1121-1123 ◽  
Author(s):  
P. Basmaji ◽  
A. Zaouk ◽  
P. Gibart ◽  
D. Gauthier ◽  
J. C. Portal
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
Temperature Range

Structural And Optical Characterization Of AlxGa1−xAs Grown At Low Temperatures By Organometallic Vapor Phase Epitaxy

1996 ◽  
Vol 442 ◽  
Author(s):  
A. Wankerl ◽  
D. T. Emerson ◽  
M. J. Cook ◽  
J. R. Shealy
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Free Carrier ◽  
Carbon Doping ◽  
Free Carrier Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Hydrogen Passivation ◽  
High Background

AbstractWe report on the low temperature growth of AlxGa1−xAs by conventional Organometallic Vapor Phase Epitaxy OMVPE for a substrate temperature of 500°C and V/III ratios extending to subunity. Optical, structural and electrical qualities are assessed with double crystal X-ray diffraction, Nomarski and atomic force microscopy, 1.6K and 300K photoluminescence, Rutherford backscattering and Hall measurements. Although our low temperature grown films are of good structural and optical quality, they exhibit high background p-doping (carbon) and high levels of hydrogen passivation. A method for extracting the carbon doping levels from lattice contraction measurements is suggested. The dependence of layer composition, free carrier concentration and hydrogen passivation on growth parameters are investigated. Moreover, the effects of post-growth annealing on free carrier concentration, lattice parameter and optical qualities are studied. The influence on the bandgap of bandtail states and compressive strain due to carbon are compared.

Iodine Doping in ZnSe in High-Temperature Range by Metalorganic Vapor-Phase Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 4A) ◽  
pp. L524-L527 ◽  
Author(s):  
Masahiro Fujimoto ◽  
Ikuo Suemune ◽  
Hirofumi Osaka ◽  
Yoshihisa Fujii
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Iodine Doping ◽  
High Temperature Range ◽  
Temperature Range

Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy

2011 ◽  
Vol 315 (1) ◽  
pp. 64-67 ◽  
Author(s):  
Tomonari Sato ◽  
Manabu Mitsuhara ◽  
Ryuzo Iga ◽  
Shigeru Kanazawa ◽  
Yasuyuki Inoue
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

High Resolution X-ray Diffraction and X-ray Topography Study of Gan on A12O3

1998 ◽  
Vol 512 ◽  
Author(s):  
J. Chaudhuri ◽  
M. Hooe Ng ◽  
D. D. Koleske ◽  
A. E. Wickenden ◽  
R. L. Henry
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Dislocation Density ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
X Ray

ABSTRACTHigh resolution x-ray diffraction and x-ray topography study of GaN thin films, grown on sapphire (00.1) substrate by reduced pressure metalorganic vapor phase epitaxy under various conditions, were performed. An attempt was made to correlate the mobility in films with similar carrier concentration with the strain and dislocation density. X-ray topography revealed the defects present in the film.

Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy

1997 ◽  
Vol 71 (23) ◽  
pp. 3376-3378 ◽  
Author(s):  
G. Y. Zhang ◽  
Y. Z. Tong ◽  
Z. J. Yang ◽  
S. X. Jin ◽  
J. Li ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Relationship Of

scholarly journals Легированный кремнием GaSb, выращенный методом ГФЭМОС в широком диапазоне соотношений V/III

2021 ◽  
Vol 55 (10) ◽  
pp. 931
Author(s):  
Р.В. Левин ◽  
А.С. Власов ◽  
Б.В. Пушный
Keyword(s):  
Raman Scattering ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
X Ray Diffraction ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Si Doped

Charachterization of Si-doped GaSb epitaxial layers grown by metal organic vapor phase epitaxy is presented. Samples are grown at constant SiH4 flow with a TMSb/TEGa ratio ranged from 1 to 50. X-ray diffraction, Raman scattering, photoluminescence, resistivity, free carrier concentration and their mobility are studied.

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping
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