Slip Free Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
Julian Blake ◽  
Jeffrey C. Gelpey ◽  
John F. Moquin ◽  
James Schlueter ◽  
Ron Capodilupo
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Primary Concern ◽  
Differential Interference Contrast Microscopy ◽  
X Ray ◽  
Contrast Microscopy ◽  
Interference Contrast Microscopy ◽  
Wafer Size ◽  
Edge Damage ◽  
Dc Arc

ABSTRACTSlip is a primary concern in Rapid Thermal Processing (RTP). Diagnostics for slip are compared, including: visual inspection, differential interference contrast microscopy (Nomarski), X-ray topography, decorative etching and optical surface scanning. Data from each technique are presented. RTP control parameters (temperature uniformity, heat up and cool down rates, edge cooling) and substrate parameters (wafer size, oxygen content, edge damage) which may have an effect on slip are discussed. Typical results for implant annealing sequences on a water-wall DC arc lamp RTP system are presented and used to suggest techniques for process optimization.

Single-element objective lens for soft x-ray differential interference contrast microscopy

2006 ◽  
Vol 31 (10) ◽  
pp. 1564 ◽  
Author(s):  
Chang Chang ◽  
Anne Sakdinawat ◽  
Peter Fischer ◽  
Erik Anderson ◽  
David Attwood
Keyword(s):  
Objective Lens ◽  
Single Element ◽  
Differential Interference Contrast ◽  
Differential Interference Contrast Microscopy ◽  
X Ray ◽  
Contrast Microscopy ◽  
Interference Contrast Microscopy

Differential interference contrast microscopy for cells using hard x-ray holography

2018 ◽  
Vol 57 (17) ◽  
pp. 4795 ◽  
Author(s):  
K. Matsuda ◽  
J. C. A. Lopez ◽  
S. Rehman ◽  
M. Misawa ◽  
Y. Suzuki ◽  
...  
Keyword(s):  
Differential Interference Contrast ◽  
Differential Interference Contrast Microscopy ◽  
X Ray ◽  
Contrast Microscopy ◽  
Interference Contrast Microscopy

Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face

2012 ◽  
Vol 717-720 ◽  
pp. 789-792 ◽  
Author(s):  
Takuma Suzuki ◽  
Hirotaka Yamaguchi ◽  
Tetsuo Hatakeyama ◽  
Hirofumi Matsuhata ◽  
Junji Senzaki ◽  
...  
Keyword(s):  
Surface Defects ◽  
Dielectric Breakdown ◽  
Differential Interference Contrast Microscopy ◽  
Gate Oxides ◽  
X Ray ◽  
Time Dependent Dielectric Breakdown ◽  
Contrast Microscopy ◽  
Morphological Defects ◽  
Interference Contrast Microscopy ◽  
Crystallographic Defects

The causes of extrinsic failures in time-dependent dielectric breakdown characteristics of gate oxide on C-face of 4H-SiC are examined by comparing breakdown points of tested gate oxides with the images of X-ray topography and those of differential interference contrast microscopy. We have concluded as follows: (1) surface morphological defects that originate from threading screw dislocations degrade reliability of gate oxides. (2) These surface defects are not necessarily found on every wafer. (3) Crystallographic defects are not killer defects of MOSFET per se.

A HgCdTe/CdTe/GaAs/Si Epitaxial Structure

1986 ◽  
Vol 67 ◽  
Author(s):  
K. Zanio ◽  
R. Bean ◽  
K. Hay ◽  
R. Fischer ◽  
H. Morkoc
Keyword(s):  
Vapor Transport ◽  
Differential Interference Contrast ◽  
Infrared Transmission ◽  
Differential Interference Contrast Microscopy ◽  
Epitaxial Structure ◽  
X Ray ◽  
Electron Channelling ◽  
Contrast Microscopy ◽  
Interference Contrast Microscopy

ABSTRACTFour layer HgCdTe/CdTe/GaAs/Si structures have been prepared by the sequential growth of (100) GaAs on (100) Si by MBE, (100) CdTe on GaAs/Si by congruent evaporation in UHV and (100) HgCdTe on CdTe/GaAs/Si by vapor transport. Infrared transmission, X-ray rocking curves, differential interference contrast microscopy and selected area electron channelling patterns characterize the structures.

Sign in / Sign up

Export Citation Format

Share Document