scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

1995 ◽  
Vol 378 ◽  
Author(s):  
B. K. Meyer ◽  
D. Volm ◽  
C. Wetzel ◽  
L. Eckey ◽  
J.-Ch. Holst ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Photoluminescence Spectroscopy ◽  
Epitaxial Layers ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Sapphire Substrates ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Time Resolved Photoluminescence

AbstractFree and bound exciton luminescences as well as donor-acceptor pair recombination of GaN epitaxial layers on 6H-SiC and sapphire substrates were investigated using time integrated and time resolved photoluminescence measurements at low temperatures. Lifetimes are determined for the donor bound exciton at 3.4722eV and for two acceptor bound excitons with energies of 3.4672eV and 3.459eV. Luminescences between 3.29eV and 3.37eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface.

scholarly journals On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation

2001 ◽  
Vol 6 ◽  
Author(s):  
F. Shahedipour ◽  
B.W. Wessels
Keyword(s):  
Luminescence Intensity ◽  
Random Distribution ◽  
Blue Emission ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Shallow Acceptors ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Time Resolved Photoluminescence

The decay dynamics of the 2.8 eV emission band in p-type GaN was investigated using time-resolved photoluminescence spectroscopy. The luminescence intensity decays non-exponentially. The decay dynamics were consistent with donor-acceptor pair recombination for a random distribution of pair distances. Calculations using the Thomas-Hopfield model indicated that recombination involves deep donors and shallow acceptors.

Zn-Related Donor-Acceptor Pair Emission in $\bf CuAlSe_{2}$ Epitaxial Layers

1994 ◽  
Vol 33 (Part 2, No. 3A) ◽  
pp. L345-L347 ◽  
Author(s):  
Sho Shirakata ◽  
Shigefusa Chichibu ◽  
Satoru Matsumoto ◽  
Shigehiro Isomura
Keyword(s):  
Epitaxial Layers ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Related Donor ◽  
Donor Acceptor Pair

Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg

2001 ◽  
Vol 228 (2) ◽  
pp. 379-383 ◽  
Author(s):  
S. Strauf ◽  
S.M. Ulrich ◽  
P. Michler ◽  
J. Gutowski ◽  
T. B�ttcher ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

scholarly journals Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
U. Strauss ◽  
H. Tews ◽  
H. Riechert ◽  
R. Averbeck ◽  
M. Schienle ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Cubic Phase ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Probing Depth ◽  
Decay Times ◽  
Cubic Gan ◽  
Donor Acceptor

Epitaxial layers of GaN on c-plane sapphire are analyzed by continuous-wave and time-resolved photoluminescence at 4K and by X-ray diffraction. Besides the well-known emissions from hexagonal GaN we observe luminescence bands at 3.279 and 3.15 to 3.21 eV which are identified as the transition of the donor bound exciton and the donor-acceptor pair recombination in cubic GaN, respectively. Measurements of the luminescence decay times are essential for the clarification of the emission processes. Due to the probing depth of about 200 nm in PL we find that the fraction of cubic phase typically decreases with layer thickness. In our best samples, however, we do not detect the cubic phase at all.

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