Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

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Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-537-g9.5 ◽

1998 ◽

Vol 537 ◽

Author(s):

Huajie Chen ◽

A. R. Smith ◽

R. M. Feenstra ◽

D. W. Greve ◽

J. E. Northrup

Keyword(s):

Molecular Beam Epitaxy ◽

Scanning Tunneling Microscopy ◽

Molecular Beam ◽

Surface Segregation ◽

Growth Parameters ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Group V ◽

Group Iii ◽

Ingan Alloys

AbstractInGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

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Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300000235 ◽

2001 ◽

Vol 6 ◽

Cited By ~ 38

Author(s):

Huajie Chen ◽

R. M. Feenstra ◽

J. E. Northrup ◽

Jörg Neugebauer ◽

D.W. Greve

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Surface Segregation ◽

Theoretical Calculations ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Group Iii ◽

Existence And Stability ◽

Image Position ◽

Ingan Alloys

InGaN alloys with (0001) or (000) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical calculations, show that there is strong indium surface segregation on InGaN for both (0001) and (000) polarities. Evidence for the existence and stability of a structure containing two adlayers of indium on the In-rich InGaN(0001) surface is presented. The dependence on growth temperature and group III/V ratio of indium incorporation in InGaN is reported, and a model based on indium surface segregation is proposed to explain the observations.

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Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy

MRS Proceedings ◽

10.1557/proc-639-g2.6 ◽

2000 ◽

Vol 639 ◽

Author(s):

Huajie Chen ◽

R. M. Feenstra ◽

J. E. Northrup ◽

J. Neugebauer ◽

D. W. Greve

Keyword(s):

Molecular Beam Epitaxy ◽

Growth Temperature ◽

First Principles ◽

Molecular Beam ◽

Surface Segregation ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Group Iii ◽

Microscopy Images ◽

Ingan Alloys

ABSTRACTInGaN alloys with (0001) or (000) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical cal- culations, show that there is strong indium surface segregation on InGaN for both (0001) and (000) polarities. The dependence on growth temperature and group III/V ratio of indium incorporation in InGaN is reported, and a model based on indium surface segregation is proposed to ex- plain the observations.

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