The application of scanning tunneling microscopy to the study of molecular beam epitaxy

1990 ◽  
Vol 99 (1-4) ◽  
pp. 473-481 ◽  
Author(s):  
M.D. Pashley
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

scholarly journals Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Parameters ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Group V ◽  
Group Iii ◽  
Ingan Alloys

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 3810-3813 ◽  
Author(s):  
Reiko Kuroiwa ◽  
Hajime Asahi ◽  
Kakuya Iwata ◽  
Seong-Jin Kim ◽  
Joo-Hyong Noh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Scanning Tunneling ◽  
Molecular Beam Epitaxy Growth ◽  
Tunneling Microscopy ◽  
Gas Source ◽  
Rich Side
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